IRG4BC20UD-STRRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRG4BC20UD-STRRPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 栅 功率控制 晶体管 |
| 文件： | 总11页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95565A
IRG4BC20UD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
VCES = 600V
• Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
G
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
E
N-channel
• Industry standard D2Pak package
• Lead-Free
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D2Pak
Absolute Maximum Ratings
Parameter
Max.
600
13
6.5
52
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
ILM
52
IF @ TC = 100°C
7.0
52
IFM
VGE
± 20
60
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
Max.
2.1
–––
40
Units
RθJC
RθCS
RθJA
Wt
°C/W
–––
1.44
–––
g (oz)
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1
01/22/10
IRG4BC20UD-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.85 2.1
––– 2.27 –––
IC = 6.5A
VGE = 15V
V
IC = 13A
See Fig. 2, 5
––– 1.87 –––
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
1.4 4.3 –––
––– ––– 250
––– ––– 1700
––– 1.4 1.7
––– 1.3 1.6
S
VCE = 100V, IC = 6.5A
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
––– 27 41
––– 4.5 6.8
––– 10 16
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
IC = 6.5A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
––– 39 –––
––– 15 –––
––– 93 140
––– 110 170
––– 0.16 –––
––– 0.13 –––
––– 0.29 0.3
––– 38 –––
––– 17 –––
––– 100 –––
––– 220 –––
––– 0.49 –––
––– 7.5 –––
––– 530 –––
––– 39 –––
––– 7.4 –––
IC = 6.5A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
ns
IC = 6.5A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH
pF
ns
A
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
See Fig. 7
IF = 8.0A
ƒ = 1.0MHz
––– 37
––– 55
55
90
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
14
Irr
Diode Peak Reverse Recovery Current ––– 3.5 5.0
––– 4.5 8.0
VR = 200V
Qrr
Diode Reverse Recovery Charge
––– 65 138
––– 124 360
nC
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
––– 240 ––– A/µs TJ = 25°C See Fig.
––– 210 ––– TJ = 125°C 17
2
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IRG4BC20UD-SPbF
12
10
8
Duty cycle: 50%
T
= 125°C
= 90°C
J
T
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 13W
60% of rated
voltage
6
4
2
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
TJ = 25°C
TJ = 150°C
TJ = 150°C
10
T = 25°C
J
1
VGE = 15V
VCC = 10V
20µs PULSE WIDTH
5µs PULSE WIDTH
A
0.1
0.1
0.1
1
10
4
6
8
10
12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
A
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3
IRG4BC20UD-SPbF
2.6
2.2
1.8
1.4
1.0
14
V
= 15V
VGE = 15V
80µs PULSE WIDTH
GE
12
10
8
C
I
= 13A
IC = 6.5A
6
4
C
I
= 3.3A
2
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T , Junction Temperature (°C)
T , Case Temperature (°C)
C
J
Fig. 5 - Typical Collector-to-Emitter Voltage
Fig. 4 - Maximum Collector Current vs.
vs. Junction Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20UD-SPbF
20
1000
800
600
400
200
0
V
C
C
C
= 0V,
f = 1MHz
VCE = 400V
IC = 6.5A
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
gc
ce
= C
= C + C
16
12
8
ce
gc
C
ies
C
oes
C
res
4
A
A
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.32
0.31
0.30
0.29
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 6.5A
RG = 50
Ω
VGE = 15V
VCC = 480V
IC = 13A
IC = 6.5A
1
IC = 3.3A
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60
80 100 120 140 160
T , Junction Temperature (°C)
J
R , Gate Resistance (Ω)
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC20UD-SPbF
1.2
1000
100
10
RG = 50
Ω
V
= 20V
= 125°C
G
E
TJ = 150°C
VCC = 480V
VGE = 15V
T
J
0.9
0.6
0.3
0.0
SAFE OPERATING AREA
1
A
0.1
0
2
4
6
8
10
12
14
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20UD-SPbF
100
100
80
60
40
20
0
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
I
F
= 8.0A
F
I
= 16A
F
10
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
1
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20UD-SPbF
Same type
device as
D.U.T.
90%
10%
V
ge
430µF
80%
V
C
of Vce
D.U.T.
90%
t
d(off)
10%
5%
I
C
t
f
t
r
t
d(on)
t=5µs
E
on
E
off
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E = (E +E
ts
)
on off
I
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20UD-SPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
VCC
ICM
RL
=
D.U.T.
L
1000V
V *
c
480µF
50V
0 - VCC
6000µF
100V
Pulsed Collector Current
Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4BC20UD-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
OR
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG4BC20UD-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (Figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (Figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2010
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11
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