IRG4BC20W [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 2.16V ， @ VGE = 15V ， IC = 6.5A ）
| 型号： | IRG4BC20W |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91652B
IRG4BC20W
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
VCES = 600V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
V
CE(on) typ. = 2.16V
G
@VGE = 15V, IC = 6.5A
E
n-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
13
IC @ TC = 100°C
6.5
A
ICM
52
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
52
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
200
mJ
PD @ TC = 25°C
60
24
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.1
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.5
–––
80
–––
2.0 (0.07)
–––
www.irf.com
1
12/30/00
IRG4BC20W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
0.48
V/°C VGE = 0V, IC = 1.0mA
2.16 2.6
IC = 6.5A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.55
2.05
—
—
—
IC = 13A
V
See Fig.2, 5
IC = 6.5A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-8.8
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
5.5 8.3
—
S
VCE = 100 V, IC = 6.5A
—
—
—
—
—
—
—
—
250
2.0
1000
±100
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
26 38
3.7 5.5
Conditions
IC = 6.5A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
10
22
14
15
—
—
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
110 160
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
64
96
—
—
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.06
0.08
mJ See Fig. 9, 10, 14
Ets
td(on)
tr
td(off)
tf
0.14 0.2
21
15
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 6.5A, VCC = 480V
ns
Turn-Off Delay Time
Fall Time
150
150
0.34
7.5
490
38
VGE = 15V, RG = 50Ω
Energy losses include "tail"
mJ See Fig. 10, 11, 14
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
LE
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
8.8
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC20W
25
20
15
10
5
F or both:
Trian gu la r w a ve:
Duty cycle: 50%
T
J
= 125°C
T
= 90°C
sink
G ate drive as specified
C lam p vo lta ge:
80 % o f rate d
Po w er D iss ip ation 13 W
=
S qu are wave:
60 % of rated
v oltag e
Ideal diodes
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
°
T = 150 C
J
10
10
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
1
1
10
5
6
7
9
10
11
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
www.irf.com
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20W
14
12
10
8
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 13A
C
I
I
= 6.5A
=3.25A
C
C
6
4
2
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
°
T
, Junction Temperature ( C)
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
www.irf.com
IRG4BC20W
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C
GE
V
CC
I
C
= 400V
= 6.5A
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
oes
ce
C
ies
C
oes
4
C
res
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.15
10
50Ω
= 15V
= 480V
V
V
T
J
= 480V
R
= Ohm
CC
GE
G
= 15V
= 25
V
GE
°
C
V
CC
I
= 6.5A
C
1
0.14
0.13
0.12
I
I
=
=
A
A
13
C
6.5
C
I
C
=
A
3.25
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
T , Junction Temperature ( C )
R
G
, Gate Resistance (Ohm)
Ω
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
www.irf.com
5
IRG4BC20W
100
10
1
0.8
V
T
= 20V
50Ω
R
T
= O
G
J
GE
J
= 125 oC
°
= 150 C
V
V
GE
= 480V
= 15V
CC
0.6
0.4
0.2
0.0
SAFE OPERATING AREA
10
1
100
1000
0
2
4
6
8
10
12
14
I
, Collector-to-emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
www.irf.com
IRG4BC20W
L
D.U.T.
480V
RL =
V
*
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
)
o ff
ts
o n
www.irf.com
7
IRG4BC20W
Case Outline and Dimensions — TO-220AB
10.54 (.415)
3.78 (.149)
N O TE S :
- B -
2.87 (.113)
2.62 (.103)
10.29 (.405)
1
D IM E N S IO N S & T O LER A N C IN G
4.69 (.185)
4.20 (.165)
3.54 (.139)
P E R A N S I Y14.5M , 1982.
C O N T R O LLIN G D IM E N SIO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM ET E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U TLIN E
TO -220A B .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1 - G A TE
1
2
3
2 - C O LLE C TO R
3 - E M ITT E R
4 - C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e n sio n s in M illim e te rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
www.irf.com
相关型号：
IRG4BC20W-S
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC20WPBF
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
INFINEON
IRG4BC20WS
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC30F
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
INFINEON
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
INFINEON
©2020 ICPDF网 联系我们和版权申明