IRG4BC20W-SPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG4BC20W-SPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总10页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95782
IRG4BC20W-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
VCES = 600V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
VCE(on) typ. = 2.16V
G
• Low IGBT conduction losses
@VGE = 15V, IC = 6.5A
E
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Lead-Free
N-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
D2Pak
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
13
IC @ TC = 100°C
6.5
A
ICM
52
ILM
52
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
200
mJ
PD @ TC = 25°C
60
24
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
0.5
Max.
2.1
Units
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
–––
40
°C/W
–––
1.44
–––
g (oz)
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1
8/27/04
IRG4BC20W-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
0.48
V/°C VGE = 0V, IC = 1.0mA
IC = 6.5A
2.16 2.6
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.55
2.05
—
—
—
IC = 13A
See Fig.2, 5
V
IC = 6.5A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-8.8
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
5.5 8.3
—
S
VCE = 100 V, IC = 6.5A
VGE = 0V, VCE = 600V
—
—
—
—
—
—
—
—
250
2.0
1000
±100
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
26 38
3.7 5.5
Conditions
IC = 6.5A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
nC
VCC = 400V
VGE = 15V
See Fig.8
10
22
14
15
—
—
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
110 160
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
64
96
—
—
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.06
0.08
mJ See Fig. 9, 10, 14
0.14 0.2
21
15
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 6.5A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
150
150
0.34
7.5
490
38
VGE = 15V, RG = 50Ω
Energy losses include "tail"
mJ See Fig. 10, 11, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
8.8
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC20W-SPbF
25
20
15
10
5
For both:
Duty cycle: 50%
= 125°C
Triangular wave:
T
J
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 13W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
°
T = 150 C
J
10
10
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
1
1
10
5
6
7
9
10
11
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC20W-SPbF
14
12
10
8
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 13A
C
I
I
= 6.5A
=3.25A
C
C
6
4
2
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
25
50
75
100
125
°
150
T , Junction Temperature ( C)
T , Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20W-SPbF
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 6.5A
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
4
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.15
10
50Ω
V
V
= 480V
R
= Ohm
= 15V
CC
GE
G
= 15V
= 25
V
GE
°
V
= 480V
T
C
= 6.5A
J
C
CC
I
0.14
0.13
0.12
1
I
I
=
=
A
A
13
C
6.5
C
I
C
=
A
3.25
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
T , Junction Temperature ( C )
RG, Gate Resistance (Ω)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC20W-SPbF
100
10
1
0.8
V
T
= 20V
50Ω
R
T
= Oh
G
J
GE
J
= 125 oC
°
= 150 C
V
= 480V
= 15V
CC
V
GE
0.6
0.4
0.2
0.0
SAFE OPERATING AREA
10
0
2
4
6
8
10
12
14
1
100
1000
I
, Collector-to-emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC20W-SPbF
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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7
IRG4BC20W-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS S EMBLED ON WW 02, 2000
IN THE ASSEMBLYLINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in ass embly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEE K 02
A = AS S E MB L Y S IT E CODE
8
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IRG4BC20W-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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