IRG4BC30FD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.59V ， @ VGE = 15V ， IC = 17A）
| 型号： | IRG4BC30FD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
| 文件： | 总10页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91451B
IRG4BC30FD
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
VCE(on) typ. =1.59V
• Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
@VGE = 15V, IC = 17A
E
n-channel
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
I
31
IC @ TC = 100°C
17
ICM
120
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
120
IF @ TC = 100°C
12
IFM
120
VGE
± 20
100
V
P
D @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ TC = 100°C
42
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
------
------
------
-----
Typ.
------
------
0.50
Max.
1.2
Units
RqJC
RqJC
RqCS
RqJA
Wt
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
2.5
°C/W
------
80
-----
------
2 (0.07)
------
g (oz)
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1
12/8/98
IRG4BC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
----
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ----
V
VGE = 0V, IC = 250µA
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.59 1.8
---- 1.99 ----
---- 1.70 ----
3.0 ---- 6.0
IC = 17A
C = 31A
VGE = 15V
V
I
See Fig. 2, 5
IC = 17A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.1
----
10
----
S
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- 250
µA
---- ---- 2500
---- 1.4 1.7
---- 1.3 1.6
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
----
51
77
12
IC = 17A
Qge
Qgc
td(on)
tr
---- 7.9
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
----
----
----
19
42
26
28
----
----
IC = 17A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
---- 230 350
---- 160 230
---- 0.63 ----
---- 1.39 ----
---- 2.02 3.9
VGE = 15V, RG = 23W
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
mJ
ns
E
ts
td(on)
tr
td(off)
tf
----
----
42
27
----
----
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 17A, VCC = 480V
Turn-Off Delay Time
FallTime
---- 310 ----
---- 310 ----
---- 3.2 ----
---- 7.5 ----
---- 1100 ----
VGE = 15V, RG = 23W
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
----
----
----
----
74
14
42
----
----
60
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
80 120
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
---- 180 ---- A/µs TJ = 25°C See Fig.
---- 120 ---- TJ = 125°C 17
14
IF = 12A
Irr
Diode Peak Reverse Recovery Current ---- 3.5 6.0
---- 5.6 10
---- 80 180
---- 220 600
VR = 200V
Qrr
Diode Reverse Recovery Charge
nC
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
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IRG4BC30FD
20
16
12
8
Duty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 21W
6 0% of rated
vo ltage
I
4
A
100
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
1000
TJ = 25°C
100
10
1
T
J
= 150°C
J
T = 150°C
TJ = 25°C
V CC = 50V
5µs PULSE WIDTH
V GE = 15V
20µs PULSE WIDTH
A
13
A
1
5
6
7
8
9
10
11
12
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC30FD
40
2.5
2.0
1.5
1.0
V
= 15V
G E
VGE = 15V
80µs PULSE WIDTH
IC = 34A
30
20
10
0
IC = 17A
IC = 8.5A
A
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80
100 120 140 160
T
, Case Tem perature (°C)
C
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
1
D = 0.50
0.20
0.10
P
D M
0.1
0.05
t
1
0.02
t
2
SINGLE PULSE
0.01
(THERMAL RES PONSE)
Notes:
1. D uty factor D
=
t
/ t
1
2
2. Peak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4BC30FD
2000
1600
1200
800
400
0
20
16
12
8
VCE = 400V
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
IC
= 17A
Coes = Cce + Cgc
C
ies
C
C
oes
res
4
A
A
0
1
10
100
0
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
2.20
2.10
2.00
1.90
1.80
VCC = 480V
VGE = 15V
IC = 34A
TJ
IC
= 25°C
= 17A
I C = 17A
IC = 8.5A
1
R G = 23
Ω
V GE = 15V
V CC = 480V
A
A
0.1
-60
-40 -20
0
20
40
60
80
100 120 140 160
0
20
40
60
80
T
, Junction Temperature (°C)
R
G
, Gate Resistance (
)
Ω
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC30FD
8.0
1000
100
10
V
T
= 20V
G E
RG
T J
= 23
Ω
= 150°C
= 125°C
J
VCC = 480V
VGE = 15V
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
A
1
1
10
100
1000
0
10
20
30
40
V
, Collector-to-E m itter V oltage (V )
I
, Collector-to-Emitter Current (A)
C E
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
T
= 150°C
J
T
= 125°C
J
10
T
=
25°C
J
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC30FD
100
10
1
160
120
80
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
I
= 6.0A
F
I
= 6.0A
F
40
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
1000
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
200
100
I
= 24A
F
I
= 6.0A
F
0
100
10
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC30FD
Same type
device as
D.U.T.
90%
10%
V
ge
430µF
80%
V
C
of Vce
D.U.T.
90%
t
d(off)
10%
5%
I
C
t
f
t
r
t
d(on)
t=5µs
E
E
off
on
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E
= (E +E
)
ts
on
off
I
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VO LTAG E D.U.T.
Q rr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VO LTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
W AVEFORMS
5% Vce
tr
td(on)
t2
Eon = Vce ie dt
t1
t4
Erec = Vd id dt
t3
DIO DE REVERSE
t1
t2
RECOVERY ENERG Y
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC30FD
Vg
GATE SIG NAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20. Pulsed Collector Current
Figure 19. Clamped Inductive Load Test
Test Circuit
Circuit
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9
IRG4BC30FD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23W (figure 19)
Pulse width £80µs; duty factor £0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-220AB
10.54 (.415)
10.29 (.405)
N O TES:
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
1
DIM ENSION S & TO LER ANCING
4.69 (.185)
4.20 (.165)
PER ANSI Y14.5M , 1982.
CO NT R OLLIN G DIM ENSIO N : IN CH .
DIM ENSION S ARE SH O W N
M ILLIM ET ER S (IN CHES).
CO NF O RM S T O JEDEC O UT LINE
TO -220AB.
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIG NME NTS
1 - G ATE
1
2
3
2 - CO LLECT O R
3 - EM ITT ER
4 - CO LLECT O R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
Dim ensions in Millim eters and (Inches)
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http://www.irf.com/
Data and specifications subject to change without notice.
12/98
10
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