IRG4BC30F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.59V ， @ VGE = 15V ， IC = 17A）
| 型号： | IRG4BC30F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
| 文件： | 总8页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91450B
IRG4BC30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES =600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.59V
G
@VGE = 15V, IC = 17A
E
• Industry standard TO-220AB package
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
31
IC @ TC = 100°C
17
A
ICM
120
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
120
VGE
20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
10
100
mJ
PD @ TC = 25°C
W
PD @ TC = 100°C Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.2
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.5
–––
80
–––
2.0 (0.07)
–––
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1
4/17/2000
IRG4BC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
6.1
—
—
—
—
0.69
V/°C VGE = 0V, IC = 1.0mA
1.59 1.8
IC = 17A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.99
1.7
—
—
—
IC = 31A
V
See Fig.2, 5
IC = 17A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
10
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
100 nA VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 17A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
7.9
19
21
15
77
12
28
—
—
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
200 300
180 270
IC = 17A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.23
1.18
—
—
mJ See Fig. 10, 11, 13, 14
1.41 2.0
20
16
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 17A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
290
350
2.5
7.5
1100
74
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ See Fig. 13, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
14
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC30F
50
40
30
20
10
0
F or both:
Trian gu la r wa v e:
D uty cycle: 50%
I
T
T
= 125°C
J
= 90°C
sink
Ga te drive as specified
C lam p vo ltage :
80% of rated
Po w e r D iss ip a tion 2 1 W
=
S qu are wave:
60 % of ra ted
volt age
I
Ideal diodes
A
100
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
10
TJ = 25°C
100
T
J
= 150°C
TJ = 150°C
TJ = 25°C
10
V C C = 50V
V G E = 15V
5µs PULSE WIDTH
20µs PULSE WIDTH
A
13
A
1
1
5
6
7
8
9
10
11
12
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4BC30F
40
30
20
10
0
2.5
2.0
1.5
1.0
V
= 15V
G E
VG E = 15V
80µs PULSE WIDTH
IC = 34A
IC = 17A
IC = 8.5A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
1
D
=
0 .50
0.2 0
0.1 0
0.0 5
P
D M
0.1
t
1
0.02
0.01
t
2
S IN G LE P U L S E
(T H E R M A L R E S P O N S E )
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.00 1
0.01
0.1
10
t
, Rectangular Pulse D uration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4BC30F
20
16
12
8
2000
1600
1200
800
400
0
VC E = 400V
IC = 17A
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
C
oes
4
res
A
60
A
0
1
10
100
0
10
20
30
40
50
Q
, Total Gate Charge (nC)
g
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
1.50
1.45
1.40
1.35
1.30
10
VC C = 480V
VG E = 15V
RG = 23
V G E = 15V
VC C = 480V
Ω
TJ
= 25°C
IC = 17A
I C = 34A
I C = 17A
IC = 8.5A
1
A
A
100 120 140 160
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
T
, Junction Temperature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4BC30F
6.0
1000
100
10
RG = 23
V
T
= 20V
G E
Ω
T J
= 150°C
= 125°C
J
V C C = 480V
V G E = 15V
5.0
4.0
3.0
2.0
1.0
0.0
SA FE O PERATING AREA
A
1
0
10
20
30
40
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
C
C E
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC30F
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4BC30F
Case Outline and Dimensions TO-220AB
10.54 (.415)
3.78 (.149)
N O TE S :
- B -
2.87 (.113)
2.62 (.103)
10.29 (.405)
1
D IM E N S IO N S & T O LER A N C IN G
4.69 (.185)
4.20 (.165)
3.54 (.139)
P E R A N S I Y14.5M , 1982.
C O N T R O LLIN G D IM E N SIO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM ET E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U TLIN E
TO -220A B .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1 - G A TE
1
2
3
2 - C O LLE C TO R
3 - E M ITT E R
4 - C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e n sio n s in M illim e te rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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