IRG4BC20UDPBF [INFINEON]
UltraFast CoPack IGBT; 超快CoPack IGBT
| 型号： | IRG4BC20UDPBF |
| 厂家： | 
Infineon |
| 描述： | UltraFast CoPack IGBT |
| 文件： | 总11页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94909
IRG4BC20UDPbF
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFAST
UltraFast CoPack IGBT
SOFTRECOVERYDIODE
Features
C
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES = 600V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typꢀ = 1ꢀ85V
@VGE = 15V, IC = 6ꢀ5A
G
â
IGBT co-packaged with HEXFRED ultrafast,
E
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
n-channel
Industry standard TO-220AB package
Lead-Free
Benefits
Generation -4 IGBTs offer highest efficiencies
available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBTsꢀ Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
TO-220AB
Parameter
Maxꢀ
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
I
13
IC @ TC = 100°C
6ꢀ5
ICM
52
A
ILM
52
IF @ TC = 100°C
7ꢀ0
IFM
52
± 20
VGE
V
P
D @ TC = 25°C
Maximum Power Dissipation
60
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 secꢀ
Mounting Torque, 6-32 or M3 Screwꢀ
°C
300 (0ꢀ063 inꢀ (1ꢀ6mm) from case)
10 lbfin (1ꢀ1 Nm)
Thermal Resistance
Parameter
Minꢀ
------
------
------
-----
Typꢀ
------
Maxꢀ
2ꢀ1
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
------
3ꢀ5
°C/W
0ꢀ50
------
80
-----
------
2 (0ꢀ07)
------
g (oz)
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1
12/23/03
IRG4BC20UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ----
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeffꢀ of Breakdown Voltage ---- 0ꢀ69 ---- V/°C VGE = 0V, IC = 1ꢀ0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1ꢀ85 2ꢀ1
---- 2ꢀ27 ----
---- 1ꢀ87 ----
3ꢀ0 ---- 6ꢀ0
IC = 6ꢀ5A
VGE = 15V
V
IC = 13A
See Figꢀ 2, 5
IC = 6ꢀ5A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeffꢀ of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
1ꢀ4 4ꢀ3 ----
S
VCE = 100V, IC = 6ꢀ5A
ICES
Zero Gate Voltage Collector Current
----
----
---- 250
---- 1700
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
---- 1ꢀ4 1ꢀ7
---- 1ꢀ3 1ꢀ6
V
IC = 8ꢀ0A
See Figꢀ 13
IC = 8ꢀ0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
----
---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
---- 27 41
---- 4ꢀ5 6ꢀ8
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
IC = 6ꢀ5A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Figꢀ 8
----
----
----
----
10
39
15
16
----
----
IC = 6ꢀ5A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
93 140
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recoveryꢀ
---- 110 170
---- 0ꢀ16 ----
---- 0ꢀ13 ----
---- 0ꢀ29 0ꢀ3
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Figꢀ 9, 10, 11, 18
----
----
38
17
----
----
TJ = 150°C,
See Figꢀ 9, 10, 11, 18
ns
IC = 6ꢀ5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
td(off)
tf
Turn-Off Delay Time
Fall Time
---- 100 ----
---- 220 ----
---- 0ꢀ49 ----
---- 7ꢀ5 ----
---- 530 ----
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recoveryꢀ
nH
pF
ns
A
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
----
39
----
VCC = 30V
See Figꢀ 7
IF = 8ꢀ0A
---- 7ꢀ4 ----
= 1ꢀ0MHz
----
----
37
55
55
90
TJ = 25°C See Figꢀ
TJ = 125°C
14
Irr
Diode Peak Reverse Recovery Current ---- 3ꢀ5 5ꢀ0
---- 4ꢀ5 8ꢀ0
TJ = 25°C See Figꢀ
TJ = 125°C
TJ = 25°C
TJ = 125°C
15
See Figꢀ
16
VR = 200V
Qrr
Diode Reverse Recovery Charge
----
65 138
nC
---- 124 360
---- 240 ----
---- 210 ----
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
A/µs TJ = 25°C
TJ = 125°C
See Figꢀ
17
2
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IRG4BC20UDPbF
12
10
8
Duty cycle: 50%
T
= 125°C
= 90°C
J
T
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 13W
60% of rated
voltage
6
4
2
A
0
0.1
1
10
100
f, Frequency (kHz)
Figꢀ 1 - Typical Load Current vsꢀ Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
TJ = 25°C
TJ = 150°C
TJ = 150°C
10
T = 25°C
J
1
VGE = 15V
VCC = 10V
20µs PULSE WIDTH
5µs PULSE WIDTH
A
0.1
0.1
0.1
1
10
4
6
8
10
12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Figꢀ 3 - Typical Transfer Characteristics
Figꢀ 2 - Typical Output Characteristics
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3
A
IRG4BC20UDPbF
2.6
2.2
1.8
1.4
1.0
14
V
= 15V
VGE = 15V
80µs PULSE WIDTH
GE
12
10
8
C
I
= 13A
IC = 6.5A
6
4
C
I
= 3.3A
2
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T , Junction Temperature (°C)
T , Case Temperature (°C)
C
J
Figꢀ 5 - Typical Collector-to-Emitter Voltage
Figꢀ 4 - Maximum Collector Current vsꢀ
vsꢀ Junction Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t , Rectangular Pulse Duration (sec)
1
Figꢀ 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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4
IRG4BC20UDPbF
20
16
12
8
1000
800
600
400
200
0
V
C
C
C
= 0V,
f = 1MHz
VCE = 400V
IC = 6.5A
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
gc
ce
= C
= C + C
ce
gc
C
ies
C
oes
C
res
4
A
A
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Figꢀ 7 - Typical Capacitance vsꢀ
Figꢀ 8 - Typical Gate Charge vsꢀ
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.32
0.31
0.30
0.29
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 6.5A
RG = 50
Ω
VGE = 15V
VCC = 480V
IC = 13A
IC = 6.5A
1
IC = 3.3A
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60
80 100 120 140 160
T , Junction Temperature (°C)
J
R , Gate Resistance (Ω)
G
Figꢀ 9 - Typical Switching Losses vsꢀ Gate
Figꢀ 10 - Typical Switching Losses vsꢀ
Resistance
Junction Temperature
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5
IRG4BC20UDPbF
1.2
1000
100
10
RG = 50
Ω
V
= 20V
= 125°C
G
E
TJ = 150°C
VCC = 480V
VGE = 15V
T
J
0.9
0.6
0.3
0.0
SAFE OPERATING AREA
1
A
0.1
0
2
4
6
8
10
12
14
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
Figꢀ 12 - Turn-Off SOA
Figꢀ 11 - Typical Switching Losses vsꢀ
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
Figꢀ 13 - Maximum Forward Voltage Drop vsꢀ Instantaneous Forward Current
6
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IRG4BC20UDPbF
100
10
1
100
80
60
40
20
0
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
F
= 16A
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Figꢀ 15 - Typical Recovery Current vsꢀ dif/dt
Figꢀ 14 - Typical Reverse Recovery vsꢀ dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Figꢀ 16 - Typical Stored Charge vsꢀ dif/dt
Figꢀ 17 - Typical di(rec)M/dt vsꢀ dif/dt
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7
IRG4BC20UDPbF
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff = Vce ic dt
∫
t1
Figꢀ 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
I
t1
t2
Figꢀ 18b - Test Waveforms for Circuit of Figꢀ 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Figꢀ 18d - Test Waveforms for Circuit of Figꢀ 18a,
Figꢀ 18c - Test Waveforms for Circuit of Figꢀ 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20UDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18eꢀ Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20ꢀ Pulsed Collector Current
Test Circuit
Figure 19ꢀ Clamped Inductive Load Test Circuit
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9
IRG4BC20UDPbF
Notes:
Repetitiverating:VGE=20V;pulsewidthlimitedbymaximumjunctiontemperature
(figure20)
VCC=80%(VCES),VGE=20V,L=10µH,RG=50Ω(figure19)
Pulsewidth≤80µs;dutyfactor≤0.1%.
Pulsewidth5.0µs,singleshot.
TO-220AB Package Outline
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF 1010
LOT CODE 1789
PART NUMBER
ASS EMB LED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBL Y
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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