HGTD10N40F1S [INTERSIL]
10A, 400V and 500V N-Channel IGBTs; 10A ， 400V和500V N沟道IGBT的
| 型号： | HGTD10N40F1S |
| 厂家： | 
Intersil |
| 描述： | 10A, 400V and 500V N-Channel IGBTs |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
10A, 400V and 500V N-Channel IGBTs
March 1997
Features
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL ≤1.4µs
EMITTER
COLLECTOR
GATE
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
COLLECTOR
(FLANGE)
Applications
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
• Power Supplies
• Motor Drives
COLLECTOR
(FLANGE)
• Protective Circuits
GATE
Description
EMITTER
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated Terminal Diagram
directly from low power integrated circuits.
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PACKAGE
C
PART NUMBER
HGTD10N40F1
HGTD10N50F1
HGTD10N40F1S
HGTD10N50F1S
BRAND
TO-251AA
TO-251AA
TO-252AA
TO-252AA
G10N40
G10N50
G
G10N40
G10N50
E
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTD10N40F1
HGTD10N50F1
HGTD10N40F1S HGTD10N50F1S UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
400
500
500
V
V
CES
CGR
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
12
10
75
±20
12
10
75
V
A
A
GE
C25
C90
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W
C
D
o
o
0.6
-55 to +150
0.6
-55 to +150
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T
C
J
STG
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 2425.4
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-1
Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
,
o
Electrical Specifications T = +25 C, Unless Otherwise Specified
C
LIMITS
HGTD10N40F1 HGTD10N50F1
HGTD10N40F1S HGTD10N50F1S
PARAMETERS
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
MAX
MIN
MAX
UNITS
Collector-Emitter Breakdown
Voltage
I
400
-
500
-
V
CES
C
GE
Gate Threshold Voltage
V
V
= V , I = 1mA
2.0
4.5
250
-
2.0
4.5
-
V
µA
µA
nA
V
GE(TH)
GE
CE
C
o
Zero Gate Voltage Collector
Current
I
T = +150 C, V = 400V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CES
J
CE
o
T = +150 C, V = 500V
250
100
2.5
2.2
2.5
2.2
J
CE
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
I
V
= ±20V, V = 0V
100
2.5
2.2
2.5
2.2
GES
GE
CE
o
V
T = +150 C, I = 5A, V = 10V
CE(ON)
J
C
GE
o
T = +150 C, I = 5A, V = 15V
V
J
C
GE
o
T = +25 C, I = 5A, V = 10V
V
J
C
GE
o
T = +25 C, I = 5A, V = 15V
V
J
C
GE
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
V
I
= 5A, V = 10V
5.3 (Typ)
V
GEP
C
CE
Q
I
= 5A, V = 10V
13.4 (Typ)
45 (Typ)
nC
ns
ns
ns
ns
mJ
G(ON)
D(ON)
C
CE
t
Resistive Load, I = 5A,
C
V
T = +150 C, V = 10V,
R
= 400V, R = 80Ω,
CE
L
t
35 (Typ)
o
RI
J
GE
Turn-Off Delay Time
Fall Time
t
= 25Ω
130 (Typ)
1400 (Typ)
0.64 (Typ)
D(OFF)
G
t
FI
Turn-Off Energy Loss Per Cycle
W
OFF
(Off Switching Dissipation = W
Frequency)
x
x
OFF
Turn-Off Delay Time
Fall Time
t
Inductive Load (See Figure 11),
= 5A, V = 400V,
-
-
-
375
-
-
-
375
1200
1.2
ns
ns
D(OFF)
I
C
CE(CLP)
t
1200
1.2
o
FI
R = 80Ω, L = 50µH, T = +150 C,
L
J
Turn-Off Energy Loss Per Cycle
W
V
= 10V, R = 25Ω
mJ
OFF
GE
G
(Off Switching Dissipation = W
Frequency)
OFF
o
Thermal Resistance Junction-to-
Case (IGBT)
R
-
1.67
-
1.67
C/W
θJC
Typical Performance Curves
12
10
8
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
DUTY CYCLE < 2%
VGE = 6.0V
VGE = 10V
10
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
T
C = +25oC
8
TC = -55oC
6
VGE = 5.5V
VGE = 5.0V
6
4
T
C = +25oC
4
2
0
T
C = +150oC
VGE = 4.5V
VGE = 4.0V
2
0
0
2
4
6
8
10
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-2
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
Typical Performance Curves (Continued)
4
3
2
1
0
18
16
14
TJ = +150oC
VGE = 15V
VGE = 10V
12
10
VGE = 10V
8
6
4
2
0
VGE = 15V
+25
+50
+75
+100
+125
+150
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
100
TC, CASE TEMPERATURE (oC)
FIGURE3. SATURATIONVOLTAGEvsCOLLECTOR-EMITTER
CURRENT (TYPICAL)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
1000
0.5
TJ +150oC, VCE = 400V
f = 1MHz
L = 50µH
800
0.4
0.3
600
CISS
VGE = 15V, RG = 50Ω
400
0.2
VGE = 10V, RG = 50Ω
VGE = 15V, RG = 25Ω
VGE = 10V, RG = 25Ω
0.1
0.0
200
COSS
CRSS
0
0
5
10
15
20
25
1
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
2
10
TJ = +150oC, VGE = 10V
TJ = +150oC, VGE = 10V
RG = 25Ω, L = 50µH
RG = 25Ω, L = 50µH
VCE = 400V
1.0
1
VCE = 400V
VCE = 200V
0
0.1
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
100
1
10
CE, COLLECTOR-EMITTER CURRENT (A)
100
I
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
3-3
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
Typical Performance Curves (Continued)
1000
10
TJ = +150oC, TC = +100oC, VGE = 10V
500
RL = 100Ω
G(REF) = 0.33mA
GATE-
EMITTER
VOLTAGE
RG = 25Ω, PT = 75W, L = 50µH
I
VGE = 10V
VCC = BVCES
375
VCE = 200V
VCC = BVCES
100
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
VCE = 400V
250
5
10
0.75 BVCES 0.75 BVCES
125
0
0.50 BVCES 0.50 BVCES
0.25 BVCES 0.25 BVCES
COLLECTOR-EMITTER VOLTAGE
1
0
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
100
IG(REF)
IG(REF)
NOTE:
20
80
TIME (µs)
IG(ACT)
IG(ACT)
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
FIGURE9. MAXIMUMOPERATINGFREQUENCYvsCOLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
Test Circuit
RL
L = 50µH
1/RG = 1/RGEN + 1/RGE
+
VCC
400V
RGEN = 50Ω
-
20V
0V
RGE = 50Ω
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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3-4
相关型号：
HGTD10N40F1S9A
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
RENESAS
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