HGTD10N40F1S9A [RENESAS]

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA;


型号：	HGTD10N40F1S9A
厂家：	RENESAS TECHNOLOGY CORP
描述：	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA 栅
文件：	总4页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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