HGTD1N120CNS9A [ETC]
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA ; 晶体管| IGBT | N -CHAN | 1.2KV V（ BR ） CES | 6.2AI （ C） | TO- 252AA\n
| 型号： | HGTD1N120CNS9A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA
|
| 文件： | 总8页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTD1N120CNS, HGTP1N120CN
Data Sheet
December 2001
6.2A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTD1N120CNS, and the HGTP1N120CN are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor.
• 6.2A, 1200V, T = 25 C
C
• 1200V Switching SOA Capability
o
• Typical E
OFF
. . . . . . . . . . . . . . . . . . 200µJ at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly Developmental Type TA49317.
Ordering Information
Packaging
PART NUMBER
HGTD1N120CNS
HGTP1N120CN
PACKAGE
TO-252AA
TO-220AB
BRAND
1N120C
1N120CN
JEDEC TO-220AB
E
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120CNS9A
COLLECTOR
(FLANGE)
Symbol
C
JEDEC TO-252AA
COLLECTOR
G
(FLANGE)
G
E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
HGTD1N120CNS, HGTP1N120CN
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTD1N120CNS,
HGTP1N120CN
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
6.2
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
3.2
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
6
20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
6A at 1200V
60
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
P
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
10
W/ C
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
8
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
µs
µs
GE
GE
SC
SC
= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
11
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; V
GE
= 15V; Pulse width limited by maximum junction temperature.
o
2. I
CE
= 7A, L = 400µH, V = 15V, T = 25 C.
GE J
o
3. V
CE(PK)
= 840V, T = 125 C, R = 82Ω.
J G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
1200
-
-
-
CES
ECS
C
GE
= 10mA, V
= 0V
15
-
V
C
GE
o
I
V
= 1200V
T
= 25 C
-
-
-
20
-
250
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
o
= 150 C
-
1.0
2.4
3.2
-
o
Collector to Emitter Saturation Voltage
V
I
= 1.0A,
= 15V
= 25 C
-
2.05
2.75
7.1
-
CE(SAT)
C
V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 50µA, V
= V
GE
6.0
-
V
GE(TH)
C CE
I
V
=
20V
o
250
-
nA
A
GES
GE
SSOA
T = 150 C, R = 82Ω, V
= 15V,
6
-
J
G
GE
= 1200V
L = 2mH, V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 1.0A, V
CE
= 600V
-
-
-
9.7
13
16
-
V
GEP
C
Q
= 1.0A,
= 600V
V
V
= 15V
= 20V
19
28
nC
nC
G(ON)
C
GE
GE
V
CE
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
HGTD1N120CNS, HGTP1N120CN
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
15
MAX
21
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 1.0A
CE
t
11
15
ns
rI
d(OFF)I
V
= 960V
= 15V
CE
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
65
95
ns
R
= 82Ω
G
t
365
78
450
-
ns
fI
L = 4mH
Test Circuit (Figure 18)
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
E
E
E
µJ
ON1
ON2
OFF
175
140
13
195
155
20
µJ
µJ
o
t
IGBT and Diode at T = 150 C
ns
d(ON)I
J
I
= 1.0 A
CE
t
11
18
ns
rI
V
= 960V
= 15V
CE
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
75
100
625
-
ns
d(OFF)I
R
= 82Ω
G
t
465
83
ns
fI
L = 4mH
Test Circuit (Figure 18)
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
E
E
E
µJ
ON1
ON2
OFF
385
200
-
460
225
2.1
µJ
µJ
o
Thermal Resistance Junction To Case
NOTES:
R
C/W
θJC
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 18.
Typical Performance Curves Unless Otherwise Specified
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
o
V
= 15V
T
= 150 C, R = 82Ω, V = 15V, L = 2mH
GE
GE
J
G
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
HGTD1N120CNS, HGTP1N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
20
18
16
14
12
10
20
18
16
14
12
10
300
200
o
o
T
V
T
= 150 C, R = 82Ω, L = 4mH
G
C
o
GE
V
= 840V, R = 82Ω, T = 125 C
J
CE G J
V
= 960V
15V
13V
15V
13V
75 C
CE
o
IDEAL DIODE
o
75 C
o
o
T
= 75 C, V
= 15V
110 C
C
GE
t
SC
110 C
100
f
f
= 0.05 / (t
+ t
d(ON)I
)
MAX1
d(OFF)I
I
SC
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
P
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 2.1 C/W, SEE NOTES
1.0
C
10
5
o
R
ØJC
13
14
, GATE TO EMITTER VOLTAGE (V)
15
0.5
2.0
3.0
I
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTORTO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
6
5
4
3
2
1
0
6
o
= 25 C
o
T
C
T
= 25 C
C
5
4
3
2
1
0
o
T
= -55 C
C
o
o
T
= -55 C
T
C
= 150 C
C
o
T
= 150 C
C
DUTY CYCLE < 0.5%, V = 15V
PULSE DURATION = 250µs
GE
DUTY CYCLE < 0.5%, V = 13V
PULSE DURATION = 250µs
GE
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
500
R
= 82Ω, L = 4mH, V
= 960V
R
= 82Ω, L = 4mH, V
= 960V
G
CE
G
CE
1000
800
600
400
400
300
200
100
0
o
T
= 150 C, V
= 13V OR 15V
J
GE
o
T
T
= 150 C, V
= 13V
J
GE
o
= 150 C, V
= 15V
J
GE
o
= 25 C, V
T
= 13V OR 15V
GE
J
200
0
o
T
T
= 25 C, V
= 13V
= 15V
J
J
GE
GE
o
= 25 C, V
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
HGTD1N120CNS, HGTP1N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
24
20
16
28
24
20
16
12
8
R
= 82Ω, L = 4mH, V = 960V
CE
R
= 82Ω, L = 4mH, V
= 960V
G
G
CE
o
T
= 25 C, V
= 13V
J
GE
o
o
T
= 25 C,T = 150 C, V
= 13V
GE
J
J
o
T
= 150 C, V
= 13V
J
GE
o
o
o
T
= 25 C,T = 150 C, V
= 15V
T
= 25 C, V
= 15V
= 15V
J
J
GE
J
GE
12
8
o
T
= 150 C, V
GE
J
4
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 10. TURN-ON RISETIME vs COLLECTORTO
EMITTER CURRENT
560
84
R
= 82Ω, L = 4mH, V
= 960V
R
= 82Ω, L = 4mH, V
CE
= 960V
G
CE
G
520
480
440
400
360
320
280
240
80
76
72
68
64
o
o
T
= 150 C, V
= 15V
= 13V
J
GE
T
= 150 C, V = 13V OR 15V
GE
J
o
T
= 150 C, V
J
GE
= 15V
GE
o
T
= 25 C, V
J
o
T
= 25 C, V
= 13V
GE
J
60
56
o
T
= 25 C, V
= 13V OR 15V
2
J
GE
0.5
1
1.5
2.5
3
0.5
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 12. FALLTIME vs COLLECTORTO EMITTER
CURRENT
16
15
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 10V
CE
V
= 800V
CE
14
12
10
8
12
9
o
T
= -55 C
V
= 1200V
C
V
= 400V
CE
CE
6
o
6
T
= 25 C
C
4
3
o
T
= 150 C
C
2
o
I
= 1mA, R = 600Ω, T = 25 C
G(REF)
L
C
0
0
0
4
8
12
16
20
6
9
12
15
V
, GATE TO EMITTER VOLTAGE (V)
Q
, GATE CHARGE (nC)
GE
G
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
HGTD1N120CNS, HGTP1N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
350
12
FREQUENCY = 1MHz
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,T = 110 C
o
V
= 15V
300
250
200
150
100
50
GE
C
10
8
C
IES
6
V
= 14V
GE
4
V
= 13V
GE
C
OES
2
C
RES
0
0
0
2
4
6
8
10
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTORTO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0
1.0
0.5
0.2
0.1
0.1
0.05
0.02
t
1
0.01
P
D
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
0.01
t
PEAK T = (P X Z
X R ) + T
2
J
D
θJC
θJC C
0.005
-5
-4
10
-3
10
-2
10
-1
10
0
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
V
GE
90%
RHRD4120
10%
E
ON2
E
OFF
L = 4mH
I
I
CE
CE
R
= 82Ω
G
90%
10%
V
CE
+
t
V
= 960V
d(ON)I
DD
t
-
fI
t
rI
t
d(OFF)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
HGTD1N120CNS, HGTP1N120CN
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t are defined in Figure 19.
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. GateVoltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. GateTermination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
shown in Figure 19. E
power loss (I
CE
integral of the instantaneous power loss (I
is the integral of the instantaneous
ON2
x V ) during turn-on and E
CE OFF
is the
x V ) during
CE CE
turn-off. All tail losses are included in the calculation for
; i.e., the collector current equals zero (I = 0).
E
OFF CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. B
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Rev. H4
相关型号：
HGTD3N60A4S9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA
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