HGTD2N120CNS9A [RENESAS]
13A, 1200V, N-CHANNEL IGBT, TO-252AA;
| 型号： | HGTD2N120CNS9A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 13A, 1200V, N-CHANNEL IGBT, TO-252AA 局域网 电动机控制 栅 瞄准线 双极性晶体管 |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTD2N120CNS, HGTP2N120CN,
HGT1S2N120CNS
Data Sheet
January 2000
File Number 4680.2
13A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTD2N120CNS, HGTP2N120CN, and
• 13A, 1200V, T = 25 C
C
HGT1S2N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
• 1200V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly Developmental Type TA49313.
Ordering Information
Packaging
PART NUMBER
PACKAGE
BRAND
2N120CN
JEDEC TO-220AB
HGTP2N120CN
TO-220AB
E
C
HGTD2N120CNS
HGT1S2N120CNS
TO-252AA
TO-263AB
2N120C
COLLECTOR
G
(FLANGE)
2N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.
Symbol
C
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
G
E
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTD2N120CNS
HGTP2N120CN,
HGT1S2N120CNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
13
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
7
20
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
13A at 1200V
104
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/ C
C
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
18
mJ
AV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
8
C
L
o
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
µs
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
= 3A, L = 4mH.
CE
3. V
o
= 840V, T = 125 C, R = 51Ω.
CE(PK)
J
G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
1200
-
-
-
CES
ECS
C
GE
= 10mA, V
= BV
= 0V
15
-
V
C
GE
o
I
V
T
= 25 C
-
-
-
100
-
100
-
µA
µA
mA
V
CES
CE
CES
C
C
C
C
C
o
T
T
T
T
= 125 C
o
= 150 C
-
1.0
2.40
3.50
-
o
Collector to Emitter Saturation Voltage
V
I
= 2.6A,
= 25 C
-
2.05
2.75
6.7
-
CE(SAT)
C
V
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 45µA, V = V
CE GE
6.4
-
V
GE(TH)
C
I
V
= ±20V
±250
-
nA
A
GES
GE
o
SSOA
T = 150 C, R = 51Ω, V
= 15V,
13
-
J
G
GE
= 1200V
L = 5mH, V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 2.6A, V = 0.5 BV
CE CES
-
-
-
10.2
30
-
V
GEP
C
Q
= 2.6A,
= 0.5 BV
V
= 15V
36
43
nC
nC
G(ON)
C
GE
V
CE
CES
V
= 20V
36
GE
2
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
25
MAX
30
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 2.6A
CE
t
11
15
ns
rI
d(OFF)I
V
= 0.8 BV
= 15V
CE
CES
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
205
260
96
220
320
-
ns
R
= 51Ω
G
t
ns
fI
L = 5mH
Test Circuit (Figure 18)
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Current Turn-On Delay Time
Current Rise Time
E
E
E
µJ
ON1
ON2
OFF
425
355
21
590
390
25
µJ
µJ
o
t
IGBT and Diode at T = 150 C,
ns
d(ON)I
J
I
= 2.6A,
CE
t
11
15
ns
rI
d(OFF)I
V
= 0.8 BV
= 15V,
,
CES
CE
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
225
360
96
240
420
-
ns
R
= 51Ω,
G
t
ns
fI
L = 5mH,
Test Circuit (Figure 18)
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
E
E
E
µJ
ON1
ON2
OFF
800
530
-
1100
580
1.20
µJ
µJ
o
Thermal Resistance Junction To Case
NOTES:
R
C/W
θJC
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 18.
5. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
14
12
10
8
16
14
12
10
8
o
T
= 150 C, R = 51Ω, V = 15V, L = 5mH
GE
V
= 15V
J
G
GE
6
6
4
4
2
2
0
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
50
40
30
20
10
0
50
40
30
20
10
0
200
100
50
o
T
= 150 C, R = 51Ω, V
= 15V, L = 5mH
o
J
G
GE
V
= 840V, R = 51Ω, T = 125 C
G J
CE
T
V
C
GE
o
o
T
= 75 C,V
= 15V
C
GE
75 C 15V
o
IDEAL DIODE
12V
75 C
f
f
P
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
MAX1
I
t
SC
SC
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
C
10
T
V
15V
12V
C
GE
o
o
110 C
110 C
R
= 1.2 C/W, SEE NOTES
o
ØJC
10
11
12
13
14
15
1
2
3
4
5
I
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
10
10
8
DUTY CYCLE <0.5%, V = 15V
GE
250µs PULSE TEST
8
o
o
T
= -55 C
T
= 25 C
C
o
C
T
= 25 C
C
6
4
2
0
6
o
T
= -55 C
C
o
T
= 150 C
C
4
o
T
= 150 C
C
2
DUTY CYCLE <0.5%, V
250µS PULSE TEST
= 12V
GE
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
900
2000
R
T
= 51Ω, L = 5mH, V
= 960V
CE
G
R
= 51Ω, L = 5mH, V
= 960V
CE
G
800
700
600
500
400
300
200
100
1500
1000
500
0
o
o
T
= 150 C, V
= 12V, V
= 15V
= 150 C, V
= 12V OR 15V
J
GE
GE
J
GE
o
T
= 25 C, V = 12V OR 15V
GE
J
o
T
= 25 C, V
GE
= 12V, V
4.0
= 15V
J
GE
1.0
1.5
2.0
2.5
3.0
3.5
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
R
= 51Ω, L = 5mH, V
= 960V
CE
G
R
= 51Ω, L = 5mH, V
= 960V
CE
G
o
o
T
= 25 C, T = 150 C, V
= 12V
GE
J
J
o
o
T
= 25 C, T = 150 C, V = 12V
J
J
GE
o
o
T
= 25 C, T = 150 C, V
= 15V
4.0
J
J
GE
o
o
T
= 25 C, T = 150 C, V = 15V
GE
J
J
0
1.0
1.5
2.0
2.5
3.0
3.5
4.5
5.0
5.0
30
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
700
400
R
= 51Ω, L = 5mH, V
= 960V
CE
R
= 51Ω, L = 5mH, V
= 960V
CE
G
G
600
500
400
300
200
100
350
300
250
200
150
100
o
V
= 12V, V = 15V, T = 150 C
GE J
GE
o
T
= 150 C, V = 12V OR 15V
GE
J
o
= 25 C, V
o
T
= 12V OR 15V
GE
V
= 12V, V = 15V, T = 25 C
GE J
J
GE
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
40
o
I
= 1mA, R = 260Ω, T = 25 C
G(REF)
L
C
DUTY CYCLE <0.5%, V
= 20V
CE
14
12
10
8
35
30
25
20
15
10
5
250µS PULSE TEST
V
= 1200V
CE
V
= 400V
V
= 800V
CE
CE
6
o
T
= -55 C
C
4
o
T
= 25 C
2
C
o
T
= 150 C
C
0
0
0
5
10
Q , GATE CHARGE (nC)
G
15
20
25
7
8
9
10
11
12
13
14
15
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
1.5
1.0
0.5
0
5
4
3
2
1
0
o
DUTY CYCLE <0.5%, T = 110 C
C
250µs PULSE TEST
FREQUENCY = 1MHz
V
= 15V
GE
C
IES
V
= 10V
GE
C
OES
C
RES
0
0.5
V
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
10
0.5
0.2
0.1
-1
10
t
1
0.05
P
D
0.02
t
2
DUTY FACTOR, D = t / t
1
2
0.01
PEAK T = (P X Z
X R
) + T
J
D
θJC
θJC C
SINGLE PULSE
-2
10
-5
-4
-3
10
-2
10
-1
0
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRD4120
90%
OFF
10%
ON2
V
GE
E
L = 5mH
E
V
CE
R
= 51Ω
G
90%
+
10%
d(OFF)I
I
CE
V
= 960V
DD
t
t
-
rI
t
fI
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
6
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device (Figure
3) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I ) plots are possible using the information shown
CE
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows f
or
; whichever is smaller at each point. The information is
MAX1
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t
are defined in Figure 19.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
is important when controlling output ripple under a lightly
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/Rθ .
The sum of device switching and conduction losses must
D
D
JM JC
C
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
not exceed P . A 50% duty factor was used (Figure 3) and
D
the conduction losses (P ) are approximated by
C
5. Gate Voltage Rating - Never exceed the gate-voltage
P
= (V
x I )/2.
CE
C
CE
rating of V
. Exceeding the rated V can result in
GEM
GE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
ON2
shown in Figure 19. E
is the integral of the
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
instantaneous power loss (I
x V ) during turn-on and
CE
CE
E
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in
CE
CE
the calculation for E
; i.e., the collector current equals
OFF
zero (I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required, an external Zener is
recommended.
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
7
相关型号：
HGTD3N60A4S9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA
FAIRCHILD
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