HGTD1N120BNS9A [FAIRCHILD]
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA ; 晶体管| IGBT | N -CHAN | 1.2KV V（ BR ） CES | 2.7AI （ C） | TO- 252AA\n
| 型号： | HGTD1N120BNS9A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA
|
| 文件： | 总8页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTD1N120BNS, HGTP1N120BN
Data Sheet
January 2001
5.3A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTD1N120BNS and HGTP1N120BN are Non-Punch
Through (NPT) IGBT designs.They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• 5.3A, 1200V, T = 25 C
C
• 1200V Switching SOA Capability
o
• Typical E
OFF
. . . . . . . . . . . . . . . . . . 120µJ at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly Developmental Type TA49316.
Ordering Information
Packaging
PART NUMBER
HGTD1N120BNS
HGTP1N120BN
PACKAGE
TO-252AA
TO-220AB
BRAND
1N120B
1N120BN
JEDEC TO-220AB
E
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
COLLECTOR
(FLANGE)
Symbol
C
JEDEC TO-252AA
COLLECTOR
G
(FLANGE)
G
E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
5.3
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
2.7
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
6
20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
o
30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
6A at 1200V
60
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
10
W/ C
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
8
C
L
o
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
pkg
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
µs
µs
GE
GE
SC
SC
= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
13
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
o
2. I
CE
= 7A, L = 400µH, V
= 15V, T = 25 C.
o
GE J
3. V
CE(PK)
= 840V, T = 125 C, R = 82Ω.
J G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
1200
-
-
-
-
CES
ECS
C
GE
= 10mA, V
= 0V
15
V
C
GE
o
I
V
= 1200V
T
= 25 C
-
-
-
250
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
20
-
o
= 150 C
-
1.0
2.9
4.3
-
o
Collector to Emitter Saturation Voltage
V
I
= 1.0A
= 25 C
-
2.5
3.8
7.1
-
CE(SAT)
C
V
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 50µA, V
= V
GE
6.0
-
V
GE(TH)
C CE
I
V
=
20V
o
250
-
nA
A
GES
GE
SSOA
T = 150 C, R = 82Ω, V
= 15V,
6
-
J
G
GE
= 1200V
L = 2mH, V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 1.0A, V
CE
= 600V
-
-
-
9.2
14
15
-
V
GEP
C
Q
= 1.0A
= 600V
V
V
= 15V
= 20V
20
21
nC
nC
G(ON)
C
GE
V
CE
GE
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
15
MAX
20
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 1.0A
CE
t
11
14
ns
rI
d(OFF)I
V
= 960V
= 15V
CE
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
67
76
ns
R
= 82Ω
G
t
226
70
300
-
ns
fI
L = 4mH
Test Circuit (Figure 18)
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
E
E
E
µJ
ON1
ON2
OFF
172
90
187
123
17
µJ
µJ
o
t
IGBT and Diode at T = 150 C
13
ns
d(ON)I
J
I
= 1.0 A
CE
t
11
15
ns
rI
V
= 960V
= 15V
CE
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
75
88
ns
d(OFF)I
R
= 82Ω
G
t
258
145
385
120
-
370
-
ns
fI
L = 4mH
Test Circuit (Figure 18)
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
E
E
E
µJ
ON1
ON2
OFF
440
175
2.1
µJ
µJ
o
Thermal Resistance Junction To Case
NOTES:
R
C/W
θJC
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E is
ON2
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in Figure 18.
J
Typical Performance Curves (Unless Otherwise Specified)
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
o
V
= 15V
T
= 150 C, R = 82Ω, V = 15V, L = 2mH
GE
GE
J
G
0
200
V
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
, COLLECTOR TO EMITTER VOLTAGE (V)
C
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves (Unless Otherwise Specified) (Continued)
20
18
16
14
20
18
16
14
300
200
o
T
o
T
= 150 C, R = 82Ω, L = 4mH, V
= 960V
V
C
o
J
G
CE
GE
15V
V
= 840V, R = 82Ω, T = 125 C
CE
G
J
o
T
= 75 C, VGE = 15V 75 C
C
o
75 C 13V
110 C 15V
110 C
IDEAL DIODE
o
o
t
SC
100
13V
I
SC
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
d(ON)I
+ E
= (P - P ) / (E
)
MAX2
C
D
C
ON2
OFF
12
10
12
10
= CONDUCTION DISSIPATION
10
5
(DUTY FACTOR = 50%)
o
R
= 2.1 C/W, SEE NOTES
1.0
ØJC
13
13.5
14
14.5
15
0.5
2.0
3.0
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTORTO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
6
5
4
3
2
1
0
6
o
= 25 C
T
C
5
4
3
2
1
0
o
T
= 25 C
C
o
T
= -55 C
C
o
o
o
T
= -55 C
T
= 150 C
T
= 150 C
C
C
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V = 15V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V = 13V
GE
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
250
R
= 82Ω, L = 4mH, V
= 960V
G
CE
R
T
= 82Ω, L = 4mH, V
= 960V
G
CE
1000
800
600
400
o
T
T
= 150 C, V
= 13V
= 15V
J
GE
200
150
100
50
o
= 150 C, V
= 13V OR 15V
o
J
GE
= 150 C, V
J
GE
o
T
= 25 C, V
= 13V OR 15V
J
GE
200
0
o
T
T
= 25 C, V
= 13V
= 15V
J
GE
o
= 25 C, V
J
GE
0
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves (Unless Otherwise Specified) (Continued)
24
20
16
12
8
28
24
20
16
12
8
R
= 82Ω, L = 4mH, V
= 960V
o
R
= 82Ω, L = 4mH, V
= 960V
G
CE
G
CE
o
T
= 25 C,T = 150 C, V
= 13V
J
J
GE
T
V
GE
J
o
o
25 C 13V
150 C 13V
25 C 15V
150 C 15V
o
= 25 C,T = 150 C, V = 15V
GE
o
o
T
J
J
o
4
0.5
1
1.5
2
2.5
3
0
1
1.5
2
2.5
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 10. TURN-ON RISETIME vs COLLECTORTO
EMITTER CURRENT
84
360
R
= 82Ω, L = 4mH, V
= 960V
G
CE
R
= 82Ω, L = 4mH, V = 960V
CE
G
80
76
72
68
64
60
56
320
280
240
200
o
T
= 150 C, V
= 15V
J
GE
o
T
T
= 150 C, V
o
= 13V
= 15V
o
J
J
GE
T
= 150 C, V = 13V OR 15V
GE
J
= 25 C,
V
GE
o
o
T
= 25 C, V
= 13V
1.5
T
= 25 C, V
= 13V OR 15V
1.5
J
GE
J
GE
160
120
0.5
1
2
2.5
3
0.5
1
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALLTIME vs COLLECTORTO
EMITTER CURRENT
15
18
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 20V
CE
V
= 800V
CE
16
14
12
10
8
12
9
o
V = 1200V
CE
T
= -55 C
V
= 400V
C
CE
o
6
T
= 25 C
C
6
o
T
= 150 C
C
4
3
2
o
= 1mA, R = 600Ω, T = 25 C
I
G(REF)
L
C
0
0
0
4
8
12
16
20
7
8
9
10
11
12
13
14
15
Q
, GATE CHARGE (nC)
V
, GATE TO EMITTER VOLTAGE (V)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves (Unless Otherwise Specified) (Continued)
350
6
FREQUENCY = 1MHz
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,T = 110 C
o
300
250
200
150
100
50
C
5
4
3
2
1
0
C
IES
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
C
OES
C
RES
0
0
5
10
15
20
25
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTORTO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0
1.0
0.5
0.2
0.1
0.1
t
1
0.05
P
D
0.02
t
2
0.01
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
0.01
PEAK T = (P X Z
X R ) + T
J
D
θJC
θJC C
0.005
-5
-4
10
-3
10
-2
10
-1
0
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
V
GE
90%
RHRD4120
10%
E
ON2
L = 4mH
E
OFF
R
= 82Ω
I
I
CE
G
CE
90%
10%
+
V
CE
V
= 960V
DD
t
d(ON)I
-
t
fI
t
rI
t
d(OFF)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t are defined in Figure 19.
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. GateVoltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. GateTermination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
shown in Figure 19. E
is the integral of the
ON2
instantaneous power loss (I
x V ) during turn-on and
CE
CE
is the integral of the instantaneous power loss
E
OFF
(I
x V ) during turn-off. All tail losses are included in
CE
CE
the calculation for E
; i.e., the collector current equals
OFF
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
zero (I
= 0).
CE
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
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Rev. H4
相关型号：
HGTD3N60A4S9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA
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