HFA1106IB [INTERSIL]
315MHz, Low Power, Video Operational Amplifier with Compensation Pin; 315MHz的低功耗，视频与补偿引脚运算放大器
| 型号： | HFA1106IB |
| 厂家： | 
Intersil |
| 描述： | 315MHz, Low Power, Video Operational Amplifier with Compensation Pin |
| 文件： | 总16页 (文件大小：596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
HFA1106
315MHz, Low Power, Video Operational
Amplifier with Compensation Pin
September 1998
Features
Description
• Compensation Pin for Bandwidth Limiting
The HFA1106 is a high speed, low power current feedback
operational amplifier built with Intersil’s proprietary comple-
mentary bipolar UHF-1 process. This amplifier features a
compensation pin connected to the internal high impedance
node, which allows for implementation of external clamping
or bandwidth limiting.
• Lower Lot-to-Lot Variability With External
Compensation
• High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 1MΩ
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02%
• Differential Phase . . . . . . . . . . . . . . . . . . 0.05 Degrees
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . . . . . . 315MHz
• Very Fast Slew Rate. . . . . . . . . . . . . . . . . . . . . . 700V/µs
• Low Supply Current. . . . . . . . . . . . . . . . . . . . . . . 5.8mA
• Gain Flatness (to 100MHz) . . . . . . . . . . . . . . . . . ±0.1dB
Bandwidth limiting is accomplished by connecting a capaci-
tor (C
) and series damping resistor (R
) from pin
COMP
8 to ground. Amplifier performance for various values of
is documented in the Electrical Specifications.
COMP
C
COMP
The HFA1106 is ideal for noise critical wideband applica-
tions. Not only can the bandwidth be limited to minimize
broadband noise, the HFA1106 is optimized for lower feed-
back resistors (R = 100Ω for A = +2) than most current
F
V
feedback amplifiers. The low feedback resistor reduces the
inverting input noise current contribution to total output
noise, while reducing DC errors as well. Please see the
“Application Information” section for details.
Applications
• Noise Critical Applications
• Professional Video Processing
• Medical Imaging
Part Number Information
PART NUMBER
(BRAND)
TEMP.
RANGE ( C)
PKG.
NO.
• Video Digitizing Boards/Systems
• Radar/IF Processing
o
PACKAGE
8 Ld PDIP
8 Ld SOIC
HFA1106IP
-40 to 85
E8.3
M8.15
• Hand Held and Miniaturized RF Equipment
• Battery Powered Communications
• Flash A/D Drivers
HFA1106IB
(H1106I)
-40 to 85
HFA11XXEVAL
DIP Evaluation Board for High Speed
Op Amps
• Oscilloscopes and Analyzers
Pinout
HFA1106
(PDIP, SOIC)
TOP VIEW
NC
-IN
+IN
V-
1
2
3
4
8
7
6
5
COMP
V+
-
+
OUT
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
File Number 3922.2
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
3-28
HFA1106
Absolute Maximum Ratings
Thermal Information
o
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Output Current (Note 1) . . . . . . . . . . . . . . . . Short Circuit Protected
30mA Continuous
Thermal Resistance (Typical, Note 2)
θ
( C/W)
JA
SUPPLY
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
130
170
o
Maximum Junction Temperature (Die Only) . . . . . . . . . . . . . . . 175 C
o
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . -65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300 C
o
o
o
60mA ≤ 50% Duty Cycle
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >600V
(SOIC - Lead Tips Only)
Operating Conditions
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to 85 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability; however, continuous (100% duty cycle)
output current must not exceed 30mA for maximum reliability.
2. θ is measured with the component mounted on an evaluation PC board in free air.
JA
Electrical Specifications
V
= ±5V, A = +1, R = 510Ω, C
= 0pF, R = 100Ω, Unless Otherwise Specified
SUPPLY
V
F
COMP
L
(NOTE 3)
TEST LEVEL
TEMP.
o
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage
TEST CONDITIONS
( C)
MIN
TYP
MAX
UNITS
A
A
B
A
A
A
A
A
A
A
A
B
A
A
A
A
A
A
A
A
B
A
A
A
A
A
A
25
Full
Full
25
-
2
3
5
8
mV
mV
-
-
o
Average Input Offset Voltage Drift
1
10
-
µV/ C
Input Offset Voltage Common-Mode
Rejection Ratio
∆V
= ±1.8V
= ±1.8V
= ±1.2V
47
45
45
50
47
47
-
50
48
48
54
50
50
6
dB
dB
dB
dB
dB
dB
µA
µA
CM
CM
CM
∆V
∆V
85
-
-40
25
-
Input Offset Voltage Power Supply
Rejection Ratio
∆V = ±1.8V
PS
-
∆V = ±1.8V
PS
85
-
∆V = ±1.2V
PS
-40
25
-
Non-Inverting Input Bias Current
15
25
60
1
Full
Full
25
-
10
5
o
Non-Inverting Input Bias Current Drift
-
nA/ C
Non-Inverting Input Bias Current
Power Supply Sensitivity
∆V = ±1.8V
PS
-
0.5
0.8
0.8
1.2
0.8
0.8
2
µA/V
µA/V
µA/V
MΩ
MΩ
MΩ
µA
∆V = ±1.8V
PS
85
-
3
∆V = ±1.2V
PS
-40
25
-
3
Non-Inverting Input Resistance
∆V
∆V
∆V
= ±1.8V
= ±1.8V
= ±1.2V
0.8
0.5
0.5
-
-
CM
CM
CM
85
-
-40
25
-
Inverting Input Bias Current
7.5
15
200
6
Full
Full
25
-
5
µA
o
Inverting Input Bias Current Drift
-
60
3
nA/ C
Inverting Input Bias Current
Common-Mode Sensitivity
∆V
∆V
∆V
= ±1.8V
= ±1.8V
= ±1.2V
-
µA/V
µA/V
µA/V
µA/V
µA/V
µA/V
CM
CM
CM
85
-
4
8
-40
25
-
4
8
Inverting Input Bias Current Power
Supply Sensitivity
∆V = ±1.8V
PS
-
2
5
∆V = ±1.8V
PS
85
-
4
8
∆V = ±1.2V
PS
-40
-
4
8
3-29
HFA1106
Electrical Specifications
V
= ±5V, A = +1, R = 510Ω, C
= 0pF, R = 100Ω, Unless Otherwise Specified (Contin-
SUPPLY
V
F
COMP
L
(NOTE 3)
TEST LEVEL
TEMP.
o
PARAMETER
Inverting Input Resistance
Input Capacitance
TEST CONDITIONS
( C)
25
MIN
-
TYP
60
MAX
UNITS
C
C
A
A
-
-
-
-
Ω
pF
V
25
-
1.6
Input Voltage Common Mode Range
25, 85
-40
±1.8
±1.2
±2.4
±1.7
(Implied by V CMRR, +R , and -I
IO IN BIAS
V
CMS Tests)
Input Noise Voltage Density
f = 100kHz
B
B
B
25
25
25
-
-
-
3.5
2.5
20
-
-
-
nV/√Hz
pA/√Hz
pA/√Hz
Non-Inverting Input Noise Current Density f = 100kHz
Inverting Input Noise Current Density
TRANSFER CHARACTERISTICS
Open Loop Transimpedance Gain
f = 100kHz
A
= -1
C
25
-
500
-
kΩ
V
AC CHARACTERISTICS
A
= +2, R = 100Ω, R
= 51Ω, Unless Otherwise Specified
V
F
COMP
-3dB Bandwidth
C
C
C
C
C
C
C
C
C
C
C
C
= 0pF
B
B
B
B
B
B
B
B
B
B
B
B
A
25
25
25
25
25
25
25
25
25
25
25
25
Full
250
140
65
315
170
80
-
-
-
-
-
-
-
-
-
-
-
-
-
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/V
C
C
C
C
C
C
C
C
C
C
C
C
(A = +1, R = 150Ω, V
OUT
= 0.2V )
P-P
V
F
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
-3dB Bandwidth
(A = +2, V
185
110
55
245
140
70
= 0.2V
)
V
OUT P-P
±0.1dB Flat Bandwidth
(A = +1, R = 150Ω, V
45
65
= 0.2V
)
V
F
OUT
P-P
25
40
13
17
±0.1dB Flat Bandwidth
(A = +2, V = 0.2V )
P-P
60
100
30
V
OUT
15
11
14
Minimum Stable Gain
1
-
OUTPUT CHARACTERISTICS
A
= +2, R = 100Ω, R
= 51Ω, Unless Otherwise Specified
V
F
COMP
Output Voltage Swing
A
= -1, R = 510Ω
A
A
A
A
B
B
B
B
B
B
B
B
B
B
B
B
B
B
25
Full
25, 85
-40
25
±3
±2.8
50
±3.4
±3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
F
V
Output Current
A
= -1, R = 50Ω,
60
mA
mA
Ω
V
L
R
= 510Ω
F
28
42
Closed Loop Output Impedance
Output Short Circuit Current
Second Harmonic Distortion
DC
-
0.07
90
A
= -1
25
-
mA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
V
C
C
C
C
C
C
C
C
C
C
C
C
= 0pF
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
25
-45
-42
-38
-50
-48
-48
-42
-38
-34
-46
-52
-50
-53
-48
-44
-57
-56
-56
-46
-42
-38
-57
-57
-57
C
C
C
C
C
C
C
C
C
C
C
C
(10MHz, V
OUT
= 2V )
P-P
25
25
Third Harmonic Distortion
(10MHz, V = 2V
25
)
OUT P-P
25
25
Second Harmonic Distortion
(20MHz, V = 2V
25
)
OUT P-P
25
25
Third Harmonic Distortion
(20MHz, V = 2V
25
)
OUT P-P
25
25
3-30
HFA1106
Electrical Specifications
V
= ±5V, A = +1, R = 510Ω, C
= 0pF, R = 100Ω, Unless Otherwise Specified (Contin-
SUPPLY
V
F
COMP
L
(NOTE 3)
TEST LEVEL
TEMP.
o
PARAMETER
TEST CONDITIONS
= +2, R = 100Ω, R
( C)
MIN
TYP
MAX
UNITS
TRANSIENT CHARACTERISTICS
A
= 51Ω, Unless Otherwise Specified
COMP
V
F
Rise and Fall Times
C
C
C
C
C
C
= 0pF
= 2pF
= 5pF
= 0pF
= 2pF
= 5pF
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
-
2.6
3.7
5.2
2.7
3.9
5.9
1.5
6
2.9
4.2
6.2
3.2
4.4
6.9
4
ns
ns
C
C
C
C
C
C
(V
OUT
= 0.5V
, A = +1, R = 150Ω)
P-P
V
F
-
-
ns
Rise and Fall Times
(V = 0.5V , A = +2)
-
ns
OUT P-P
V
-
-
ns
ns
Overshoot (Note 4)
(A = +1, R = 150Ω, V t = 2.5ns)
IN RISE
V
V
V
V
V
V
= 250mV
-
%
OUT
OUT
OUT
OUT
OUT
OUT
P-P
V
F
= 2V
-
10
7.5
5
%
P-P
= 0V to 2V
= 250mV
-
4
%
Overshoot (Note 4)
-
2
%
P-P
(A = +2, V
V
t
= 2.5ns)
IN RISE
= 2V
-
6.5
2.5
680
545
530
410
365
300
910
720
730
520
485
375
26
12
7.5
-
%
P-P
= 0V to 2V
-
%
Slew Rate
+SR, C = 0pF
580
400
470
300
320
200
750
500
550
350
380
250
-
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
ns
C
(V
= 4V
, A = +1, R = 150Ω)
P-P
OUT
V
F
-SR, C = 0pF
-
C
+SR, C = 2pF
-
C
-SR, C = 2pF
-
C
+SR, C = 5pF
-
C
-SR, C = 5pF
-
C
Slew Rate
(V = 5V
+SR, C = 0pF
-
C
, A = +2)
P-P
OUT
V
-SR, C = 0pF
-
C
+SR, C = 2pF
-
C
-SR, C = 2pF
-
C
+SR, C = 5pF
-
C
-SR, C = 5pF
C
-
Settling Time
(V = +2V to 0V Step,
To 0.1%
35
43
75
-
OUT
= 0pF to 5pF)
To 0.05%
To 0.02%
-
33
ns
C
C
-
49
ns
Overdrive Recovery Time
VIDEO CHARACTERISTICS A = +2, R = 100Ω, R = 51Ω, Unless Otherwise Specified
COMP
V
= ±2V
-
8.5
ns
IN
V
F
Differential Gain
C
= 0pF
= 5pF
= 0pF
= 5pF
B
B
B
B
25
25
25
25
-
-
-
-
0.02
0.02
0.05
0.07
-
-
-
-
%
C
C
C
C
(f = 3.58MHz, R = 150Ω)
L
C
C
C
%
Differential Phase
Degrees
Degrees
(f = 3.58MHz, R = 150Ω)
L
POWER SUPPLY CHARACTERISTICS
Power Supply Range
C
A
A
25
25
±4.5
-
±5.5
6.1
V
Power Supply Current
-
-
5.8
5.9
mA
mA
Full
6.3
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Undershoot dominates for output signal swings below GND (e.g. 2V ) yielding a higher overshoot limit compared to the V
P-P
= 0V to
OUT
2V condition.
3-31
HFA1106
Application Information
Optimum Feedback Resistor
All current feedback amplifiers (CFAs) require a feedback
resistor (R ) even for unity gain applications, and R in
F
F
conjunction with the internal compensation capacitor sets
the dominant pole of the frequency response. Thus the
amplifier’s bandwidth is inversely proportional to R . The
F
HFA1106 design is optimized for R = 150Ω at a gain of +1.
F
Decreasing R decreases stability resulting in excessive
F
peaking and overshoot - Note: Capacitive feedback causes
the same problems due to the feedback impedance
decrease at higher frequencies. At higher gains, however,
E
= 456µ V
RMS
N
the amplifier is more stable, so R can be decreased in a
F
trade-off of stability for bandwidth (e.g., R = 100Ω for
F
A
= +2).
V
FIGURE 1. HFA1105 NOISE PERFORMANCE, A = +2,
V
Why Use Externally Compensated Amplifiers?
R
= 510Ω
F
Externally compensated op amps were originally developed
to allow operation at gains below the amplifier’s minimum
stable gain. This enabled development of non-unity gain sta-
ble op amps with very high bandwidth and slew rates. Users
needing lower closed loop gains could stabilize the amplifier
with external compensation if the associated performance
decrease was tolerable.
With the advent of CFAs, unity gain stability and high perfor-
mance are no longer mutually exclusive, so why offer unity
gain stable op amps with compensation pins?
The main reason for external compensation is to allow users
to tailor the amplifier’s performance to their specific system
needs. Bandwidth can be limited to the exact value required,
thereby eliminating excess bandwidth and its associated
noise. A compensated op amp is also more predictable;
lower lot-to-lot variation requires less system overdesign to
cover process variability. Finally, access to the internal high
impedance node allows users to implement external output
limiting or allows for stabilizing the amplifier when driving
large capacitive loads.
E
= 350µ V
RMS
N
FIGURE 2. HFA1106 NOISE PERFORMANCE,
UNCOMPENSATED, A = +2, R = 100Ω
V
F
Offset Advantage
An added advantage of the lower value R is a smaller DC
output offset. The op amp’s inverting input bias current (I
flows through the feedback resistor and generates an offset
F
)
BI
Noise Advantages - Uncompensated
voltage error defined by:
The HFA1106 delivers lower broadband noise even without
an external compensation capacitor. Package capacitance
present at the Comp pin stabilizes the op amp, so lower
V
= I x R ; and V
BI
= A (±V ) ± V
IO E
E
F
OS
V
Reducing R reduces these errors.
F
value feedback resistors can be used. A smaller value R
F
Bandwidth Limiting
minimizes the noise voltage contribution of the amplifier’s
The HFA1106 bandwidth may be limited by connecting a
resistor, R (required to damp the interaction between
inverting input noise current - I x R , usually a large con-
tributor on CFAs - and minimizes the resistor’s thermal noise
contribution (4KTR ). Figure 1 details the HFA1105 broad-
F
band noise performance in its recommended configuration
NI
F
COMP
the compensation capacitor and the package parasitics),
and capacitor, C , in series from pin 8 to GND. Typical
COMP
performance characteristics for various C
values are
of A = +2, and R = 510Ω. Adding a Comp pin to the
COMP
V
F
listed in the specification table. The HFA1106 is already
unity gain stable, so the main reason for limiting the band-
width is to reduce the broadband noise.
HFA1105 (thereby creating the HFA1106) yields the 23%
noise reduction shown in Figure 2. In both cases, the scope
bandwidth, 100MHz, limits the measurement range to pre-
vent amplifier bandwidth differences from affecting the
results.
Noise Advantages - Compensated
System noise reduction is maximized by limiting the op amp to
the bandwidth required for the application. Noise increases as
the square root of the bandwidth increase (4x bandwidth
increase yields 2x noise increase), so eliminating excess
3-32
HFA1106
bandwidth significantly reduces system noise. Figure 3 illustrates enough, instability. To reduce this capacitance, the designer
the noise performance of the HFA1106 with its bandwidth limited should remove the ground plane under traces connected to
to 40MHz by a 10pF C
. As expected the noise decreases -IN, and keep connections to -IN as short as possible.
COMP
by approximately 37% (100% x (1-√40MHz/100MHz)) compared
with Figure 2. The decrease is an even more dramatic 48%
versus the HFA1105 noise level in Figure 1.
An example of a good high frequency layout is the Evaluation
Board shown in Figure 4.
Evaluation Board
The performance of the HFA1106 may be evaluated using
the HFA11XX Evaluation Board.
Figure 4 details the evaluation board layout and schematic.
Connecting R
and C
in series from socket pin 8
COMP
COMP
to the GND plane compensates the op amp. Cutting the
trace from pin 8 to the V connector removes the stray par-
H
allel capacitance, which would otherwise affect the evalua-
tion. Additionally, the 500Ω feedback and gain setting
resistors should be changed to the proper value for the gain
being evaluated.
E
= 236µ V
RMS
N
To order evaluation boards (part number HFA11XXEVAL),
please contact your local sales office.
FIGURE 3. HFA1106 NOISE PERFORMANCE,
COMPENSATED, A = +2, R = 100Ω, C = 10 F
V
F
C
P
Additionally, compensating the HFA1106 allows the use of a
lower value R for a given gain. The decreased bandwidth
F
V
H
due to C
keeps the amplifier stable by offsetting the
COMP
increased bandwidth from the lower R . As noted previ-
F
ously, a lower value R provides the double benefit of
F
1
reduced DC errors and lower total noise.
+IN
Less Lot-to-Lot Variability
OUT
V-
V+
External compensation provides another advantage by
allowing designers to set the op amp’s performance with a
precision external component. On-chip compensation
capacitors can vary by 10-20% over the process extremes.
A precise external capacitor dominates the on-chip compen-
sation for consistent lot-to-lot performance and more robust
designs. Compensating high frequency amplifiers to lower
bandwidths can simplify design tasks and ensure long term
manufacturability.
V
L
GND
TOP LAYOUT
PC Board Layout
This amplifier’s frequency response depends greatly on the
care taken in designing the PC board. The use of low
inductance components such as chip resistors and chip
capacitors is strongly recommended, while a solid
ground plane is a must!
BOTTOM LAYOUT
510
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
(0.1µF) chip capacitor works well in most cases.
510
V
H
R
1
Terminated microstrip signal lines are recommended at the
device’s input and output connections. Capacitance, para-
sitic or planned, connected to the output must be minimized,
1
2
3
4
8
7
6
5
10µF
+5V
0.1µF
50Ω
50Ω
compensated for by increasing C
series output resistor.
, or isolated by a
COMP
IN
OUT
V
L
GND
0.1µF
10µF
Care must also be taken to minimize the capacitance to
ground at the amplifier’s inverting input (-IN), as this capaci-
tance causes gain peaking, pulse overshoot, and if large
-5V
GND
FIGURE 4. EVALUATION BOARD SCHEMATIC AND LAYOUT
3-33
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified
SUPPLY
A
L
A
C
= +1
A
C
= +2
V
C
V
C
= 0pF, R = 150Ω
120
80
F
120
80
40
0
= 0pF, R = 100Ω
F
40
0
-40
-80
-120
-40
-80
-120
TIME (10ns/DIV.)
FIGURE 5. SMALL SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 6. SMALL SIGNAL PULSE RESPONSE
A
C
= +2
A
C
= +1
V
C
V
C
= 0pF, R = 100Ω
1.2
0.8
1.2
0.8
0.4
0
= 0pF, R = 150Ω
F
F
0.4
0
-0.4
-0.8
-1.2
-0.4
-0.8
-1.2
TIME (10ns/DIV.)
FIGURE 7. LARGE SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 8. LARGE SIGNAL PULSE RESPONSE
A
C
= +2
A
C
= +1
V
C
V
C
= 0pF, R = 100Ω
3
2
3
2
= 0pF, R = 150Ω
F
F
1
1
0
0
-1
-2
-3
-1
-2
-3
TIME (10ns/DIV.)
FIGURE 9. LARGE SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 10. LARGE SIGNAL PULSE RESPONSE
3-34
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
C
V
= 0pF
C
V
= 0pF
C
C
A
= +1
V
= 200mV
P-P
0.1
0
3
0
= 200mV
P-P
OUT
OUT
A
= +1
V
GAIN
A
= +2
A
= +2
V
-3
-6
-0.1
-0.2
-0.3
V
0
PHASE
A
= +1
V
45
90
135
A
= +2
V
180
225
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 11. FREQUENCY RESPONSE
FIGURE 12. GAIN FLATNESS
A
C
= +1
A
C
= +1
V
C
V
C
= 0pF, R = 150Ω
= 200mV
= 0pF, R = 150Ω
= 200mV
F
3
0
F
0.1
V
V
OUT
P-P
OUT
P-P
0
-0.1
-0.2
-0.3
GAIN
-3
-6
0
PHASE
45
90
135
180
225
500
1
10
100
500
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE 13. FREQUENCY RESPONSE (12 UNITS, 4 RUNS)
FIGURE 14. GAIN FLATNESS (12 UNITS, 4 RUNS)
3-35
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
0.2
0.1
0
A
C
V
= +2
A
C
= +2
V
C
V
C
= 0pF, R = 100Ω
= 0pF, R = 100Ω
= 200mV
F
3
0
F
= 200mV
V
OUT
P-P
OUT
P-P
GAIN
-0.1
-0.2
-0.3
-3
-6
0
PHASE
45
90
135
180
225
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 15. FREQUENCY RESPONSE (12 UNITS, 4 RUNS)
FIGURE 16. GAIN FLATNESS (12 UNITS, 4 RUNS)
A
C
= +2
A
C
= +1
V
C
V
C
= 2pF, R = 100Ω
= 2pF, R = 150Ω
120
80
120
80
F
F
40
0
40
0
-40
-40
-80
-80
-120
-120
TIME (10ns/DIV.)
FIGURE 17. SMALL SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 18. SMALL SIGNAL PULSE RESPONSE
A
C
= +1
A
C
= +2
V
C
V
C
= 2pF, R = 150Ω
1.2
0.8
0.4
0
= 2pF, R = 100Ω
1.2
0.8
0.4
0
F
F
-0.4
-0.8
-1.2
-0.4
-0.8
-1.2
TIME (10ns/DIV.)
FIGURE 19. LARGE SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 20. LARGE SIGNAL OUTPUT VOLTAGE
3-36
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
A
C
= +1
A
C
= +2
V
C
V
C
= 2pF, R = 150Ω
= 2pF, R = 100Ω
3
3
2
1
0
F
F
2
1
0
-1
-2
-1
-2
-3
-3
TIME (10ns/DIV.)
FIGURE 21. LARGE SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 22. LARGE SIGNAL PULSE RESPONSE
C
V
= 2pF
C
V
= 2pF
C
C
= 200mV
P-P
3
= 200mV
P-P
0.1
OUT
OUT
0
-3
-6
0
-0.1
-0.2
-0.3
GAIN
A
= +1
V
A
= +1
V
A
A
= +2
= +1
V
V
A
= +2
V
0
PHASE
45
90
A
= +2
V
135
180
225
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 23. FREQUENCY RESPONSE
FIGURE 24. GAIN FLATNESS
A
V
= +1, C = 2pF, R = 150Ω
A
V
= +1, C = 2pF, R = 150Ω
C
F
V
C
F
0.1
3
V
= 200mV
= 200mV
OUT
P-P
OUT
P-P
0
0
-0.1
-0.2
-0.3
-3
-6
-9
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 25. FREQUENCY RESPONSE (12 UNITS, 4 RUNS)
FIGURE 26. GAIN FLATNESS (12 UNITS, 4 RUNS)
3-37
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
A
V
= +2, C = 2pF, R = 100Ω
A
V
= +2, C = 2pF, R = 100Ω
V
C
F
V
C
F
3
0
0.1
0
= 200mV
= 200mV
OUT
P-P
OUT
P-P
GAIN
-3
-6
-0.1
-0.2
-0.3
0
PHASE
45
90
135
180
225
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 27. FREQUENCY RESPONSE (12 UNITS, 4 RUNS)
FIGURE 28. GAIN FLATNESS (12 UNITS, 4 RUNS)
A
C
= +1
A
C
= +2
V
C
V
C
= 5pF, R = 150Ω
120
80
120
80
40
0
= 5pF, R = 100Ω
F
F
40
0
-40
-40
-80
-80
-120
-120
TIME (10ns/DIV.)
FIGURE 29. SMALL SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 30. SMALL SIGNAL PULSE RESPONSE
A
C
= +1
A
C
= +2
V
C
V
C
1.2
0.8
0.4
0
= 5pF, R = 150Ω
1.2
0.8
= 5pF, R = 100Ω
F
F
0.4
0
-0.4
-0.8
-1.2
-0.4
-0.8
-1.2
TIME (10ns/DIV.)
FIGURE 31. LARGE SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 32. LARGE SIGNAL PULSE RESPONSE
3-38
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
A
C
= +1
A
C
= +2
V
C
V
C
3
2
= 5pF, R = 150Ω
= 5pF, R = 100Ω
3
F
F
2
1
0
1
0
-1
-2
-3
-1
-2
-3
TIME (10ns/DIV.)
FIGURE 33. LARGE SIGNAL PULSE RESPONSE
TIME (10ns/DIV.)
FIGURE 34. LARGE SIGNAL PULSE RESPONSE
C
= 5pF
= 200mV
P-P
C
C = 5pF
C
0.1
3
0
V
OUT
V = 200mV
OUT P-P
0
-0.1
-0.2
-0.3
GAIN
-3
-6
A = +1
V
A
= +1
V
A
= +2
V
A
= +2
V
0
PHASE
A
= +1
V
45
90
A
= +2
V
135
180
225
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 35. FREQUENCY RESPONSE
FIGURE 36. GAIN FLATNESS
A
C
= +1
A
C
= +1
V
C
V
C
= 5pF, R = 150Ω
= 200mV
3
= 5pF, R = 150Ω
= 200mV
F
0.1
0
F
V
V
OUT
P-P
OUT
P-P
0
-3
-6
-0.1
-0.2
-0.3
0
45
90
135
180
225
1
1
10
100
500
10
FREQUENCY (MHz)
500
100
FREQUENCY (MHz)
FIGURE 37. FREQUENCY RESPONSE (12 UNITS, 4 RUNS)
FIGURE 38. GAIN FLATNESS (12 UNITS, 4 RUNS)
3-39
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
A
= +2, C = 5pF, R = 100Ω
V
C
F
A
V
= +2, C = 5pF, R = 100Ω
V
C
F
3
0
0.1
0
V
= 200mV
OUT
P-P
= 200mV
OUT
P-P
-3
-6
-0.1
-0.2
-0.3
0
45
90
135
180
225
1
10
FREQUENCY (MHz)
100
500
1
10
FREQUENCY (MHz)
100
500
FIGURE 39. FREQUENCY RESPONSE (12 UNITS, 4 RUNS)
FIGURE 40. GAIN FLATNESS (12 UNITS, 4 RUNS)
4.0
3.5
3.0
A
= -1
A
R
V
= +2
= 100Ω
V
V
F
C
= 2pF
C
= 2V
OUT
0.15
0.1
|-V
+V
|
|
R
= 100Ω
= 50Ω
OUT
L
OUT
R
L
0.05
0
|-V
OUT
OUT
C
= 0pF
C
+V
-0.05
-0.1
2.5
2
0
10
20 30
40
50
60
70
80
90 100
-100
-50
0
50
100
150
o
TIME (ns)
TEMPERATURE ( C)
FIGURE 41. SETTLING RESPONSE
FIGURE 42. OUTPUT VOLTAGE vs TEMPERATURE
3-40
HFA1106
o
Typical Performance Curves V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
6.1
6.0
5.9
5.8
5.7
5.6
5.5
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
SUPPLY VOLTAGE (±V)
FIGURE 43. SUPPLY CURRENT vs SUPPLY VOLTAGE
Die Characteristics
DIE DIMENSIONS:
59 mils x 58.2 mils x 19 mils
1500µm x 1480µm x 483µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
PASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
TRANSISTOR COUNT:
75
SUBSTRATE POTENTIAL (Powered Up):
Floating
(Recommend Connection to V-)
Metallization Mask Layout
HFA1106
-IN
COMP
3-41
3-42
3-43
相关型号：
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