HFA1110 [INTERSIL]
750MHz, Low Distortion Unity Gain, Closed Loop Buffer; 750MHz的低失真单位增益，闭环缓冲器
| 型号： | HFA1110 |
| 厂家： | 
Intersil |
| 描述： | 750MHz, Low Distortion Unity Gain, Closed Loop Buffer |
| 文件： | 总9页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFA1110
Data Sheet
February 1999
File Number 2944.7
750MHz, Low Distortion Unity Gain,
Closed Loop Buffer
Features
• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . . . . . .750MHz
• Very Fast Slew Rate. . . . . . . . . . . . . . . . . . . . . . 1300V/µs
• Fast Settling Time (0.2%). . . . . . . . . . . . . . . . . . . . . . 7ns
• High Output Current . . . . . . . . . . . . . . . . . . . . . . . . .60mA
• Fixed Gain of +1
The HFA1110 is a unity gain closed loop buffer that achieves
-3dB bandwidth of 750MHz, while offering excellent video
performance and low distortion. Manufactured on Intersil’s
proprietary complementary bipolar UHF-1 process, the
HFA1110 also offers very fast slew rate, and high output
current. It is one more example of Intersil’s intent to enhance
its leadership position in products for high speed signal
processing applications.
• Gain Flatness (100MHz) . . . . . . . . . . . . . . . . . . . . 0.03dB
• Differential Phase . . . . . . . . . . . . . . . . . . . 0.025 Degrees
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04%
• 3rd Harmonic Distortion (50MHz). . . . . . . . . . . . . . -80dBc
• 3rd Order Intercept (100MHz) . . . . . . . . . . . . . . . . 30dBm
The HFA1110’s settling time of 11ns to 0.1%, low distortion
and ability to drive capacitive loads make it an ideal flash
A/D driver.
The HFA1110 is an enhanced, pin compatible upgrade for
the AD9620, AD9630, CLC110, EL2072, BUF600 and
BUF601.
Applications
• Video Switching and Routing
• RF/IF Processors
For buffer applications requiring a standard op amp pinout,
or selectable gain (-1, +1, +2), see the HFA1112 data sheet.
For output limiting see the HFA1113 data sheet.
• Driving Flash A/D Converters
• High-Speed Communications
• Impedance Transformation
• Line Driving
For military grade product please refer to the HFA1110/883
data sheet.
Pinout
HFA1110
(SOIC)
• Radar Systems
TOP VIEW
Ordering Information
V+
OPT V+
NC
1
2
3
4
8
7
6
5
OUT
NC
PART NUMBER
(BRAND)
TEMP.
RANGE ( C)
PKG.
NO.
o
PACKAGE
8 Ld SOIC
+
-
HFA1110IB
(H1110I)
-40 to 85
M8.15
OPT V-
V-
IN
HFA1110EVAL
High Speed Buffer DIP Evaluation Board
Pin Descriptions
PIN
NAME
V+
NUMBER
DESCRIPTION
1
2
3
4
5
6
7
8
Positive Supply
Optional Positive Supply
No Connection
Input
Opt V+
NC
IN
V-
Negative Supply
Optional Negative Supply
No Connection
Output
Opt V-
NC
OUT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HFA1110
Absolute Maximum Ratings
Thermal Information
o
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Thermal Resistance (Typical, Note 1)
θ
( C/W)
JA
SUPPLY
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
158
o
Maximum Junction Temperature (Plastic Package) . . . . . . . .150 C
Maximum Storage Temperature Range. . . . . . . . . . -65 C to 150 C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300 C
o
o
o
Operating Conditions
(SOIC - Lead Tips Only)
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to 85 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ is measured with the component mounted on an evaluation PC board in free air.
JA
Electrical Specifications
V
= ±5V, R = 100Ω, Unless Otherwise Specified
SUPPLY
L
o
PARAMETER
TEST CONDITIONS
TEMP ( C)
MIN
TYP
MAX
UNITS
INPUT CHARACTERISTICS
Output Offset Voltage (Note 2)
25
Full
Full
25
-
-
8
-
25
35
-
mV
mV
o
Output Offset Voltage Drift
PSRR
-
10
45
-
µV/ C
39
35
-
-
dB
dB
Full
25
-
Input Noise Voltage (Note 2)
Input Noise Current (Note 2)
Input Bias Current (Note 2)
100kHz
100kHz
14
51
10
-
-
nV/√Hz
pA/√Hz
µA
25
-
-
25
-
40
65
-
Full
25
-
µA
Input Resistance
25
-
50
2
kΩ
Input Capacitance
TRANSFER CHARACTERISTICS
Gain
25
-
pF
V
= 2V
25
Full
25
0.980
0.975
-
0.990
-
1.02
1.025
-
V/V
V/V
%
OUT
P-P
DC Non-Linearity (Note 2)
OUTPUT CHARACTERISTICS
Output Voltage (Note 2)
±2V Full Scale
0.003
25
Full
3.0
2.5
50
3.3
3.0
60
-
-
-
-
±V
±V
Output Current (Note 2)
R
= 50Ω
25, 85
-40
mA
mA
L
35
50
POWER SUPPLY CHARACTERISTICS
Supply Voltage Range
Full
25
4.5
-
21
-
5.5
26
33
±V
mA
mA
Supply Current (Note 2)
-
-
Full
AC CHARACTERISTICS
-3dB Bandwidth (Note 2)
Slew Rate
V
= 0.2V
25
25
25
25
25
25
25
25
25
-
-
-
-
-
-
-
-
-
750
1300
150
-
-
-
-
-
-
-
-
-
MHz
V/µs
MHz
dB
OUT
P-P
V
= 5V
= 4V
OUT
P-P
P-P
Full Power Bandwidth (Note 2)
Gain Flatness (Note 2)
V
OUT
To 100MHz
To 30MHz
±0.03
±0.01
±0.3
-60
dB
Linear Phase Deviation (Note 2)
2nd Harmonic Distortion (Note 2)
3rd Harmonic Distortion (Note 2)
3rd Order Intercept (Note 2)
DC to 100MHz
Degrees
dBc
50MHz, V
50MHz, V
100MHz
= 2V
= 2V
OUT
P-P
-80
dBc
OUT
P-P
30
dBm
2
HFA1110
Electrical Specifications
V
= ±5V, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
L
o
PARAMETER
TEST CONDITIONS
TEMP ( C)
MIN
TYP
14
MAX
UNITS
dBm
dB
-1dB Gain Compression
100MHz
25
25
-
-
-
-
Reverse Gain (S , Note 2)
12
100MHz, V
= 1V
-60
OUT
P-P
TRANSIENT RESPONSE
Rise Time
V
= 0.5V Step
25
25
-
-
0.5
2.5
-
-
ns
%
OUT
Overshoot (Note 2)
V
= 1.0V Step, Input Signal
OUT
Rise/Fall = 1ns
0.2% Settling Time (Note 2)
0.1% Settling Time (Note 2)
Overdrive Recovery Time
Differential Gain
V
= 1V to 0V
= 1V to 0V
25
25
25
25
25
-
-
-
-
-
7
11
-
-
-
-
-
ns
ns
OUT
V
OUT
15
ns
3.58MHz, R = 75Ω
0.04
0.025
%
L
Differential Phase
3.58MHz, R = 75Ω
Degrees
L
NOTE:
2. See Typical Performance Curves for more information.
50Ω
Application Information
1
2
3
4
8
+5V
OUT
R
S
0.1µF
10µF
50Ω
PC Board Layout
7
6
5
HFA1110
The frequency performance of this amplifier depends a great
deal on the amount of care taken in designing the PC board.
The use of low inductance components such as chip
resistors and chip capacitors is strongly recommended,
while a solid ground plane is a must!
-5V
IN
10µF
0.1µF
SCHEMATIC DIAGRAM
BOTTOM LAYOUT
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
chip (0.1µF) capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Output capacitance, such as
that resulting from an improperly terminated transmission
line will degrade the frequency response of the amplifier and
may cause oscillations. In most cases, the oscillation can be
avoided by placing a resistor (R ) in series with the output.
S
See the “Recommended R vs Load Capacitance” graph for
S
specific recommendations.
An example of a good high frequency layout is the
Evaluation Board shown below.
Evaluation Board
An evaluation board is available for the HFA1110 (part
number HFA1110EVAL). Please contact your local sales
office for information.
TOP LAYOUT
The layout and schematic of the board are shown here:
1
NOTE: The SOIC version may be evaluated in the DIP board by
using a SOIC-to-DIP adapter such as Aries Electronics Part Number
08-350000-10.
3
HFA1110
o
Typical Performance Curves
V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified
SUPPLY
A
L
120
80
1.2
0.8
0.4
0
40
0
-40
-80
-120
-0.4
-0.8
-1.2
TIME (5ns/DIV.)
TIME (5ns/DIV.)
FIGURE 1. SMALL SIGNAL PULSE RESPONSE
FIGURE 2. LARGE SIGNAL PULSE RESPONSE
2
1
0
GAIN
R
= 1kΩ
L
6
3
V
= 200mV
OUT
P-P
R
= 100Ω
V
= 1V
L
OUT
P-P
0
0
-1
-2
-3
-4
-45
R
= 50Ω
L
-3
-6
-90
-135
-180
0
PHASE
= 200mV
-90
-180
-5
-6
-225
-270
V
OUT
P-P
-270
-360
-7
-8
R
= 1kΩ
L
1M
10M
100M
1G
0
200M
400M
600M
800M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 3. FREQUENCY RESPONSE
FIGURE 4. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS
2
890
870
850
830
810
790
770
750
1
0
-1
-2
-3
-4
-5
-6
-7
-8
V
= 200mV
P-P
OUT
V
= 2.5V
P-P
OUT
V
= 4V
P-P
OUT
730
710
-50 -30 -10
10
30
50
70
90
110 130
1M
10M
FREQUENCY (Hz)
100M
1G
o
TEMPERATURE ( C)
FIGURE5. FREQUENCYRESPONSEFORVARIOUSOUTPUT
VOLTAGES
FIGURE 6. -3dB BANDWIDTH vs TEMPERATURE
4
HFA1110
o
Typical Performance Curves
V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
0.25
0.20
0.15
0.10
0.05
0
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-0.05
-0.10
0
15M 30M 45M 60M 75M 90M 105M 120M 135M 150M
FREQUENCY (Hz)
1M
10M
100M 200M
FREQUENCY (Hz)
FIGURE 7. GAIN FLATNESS
FIGURE 8. DEVIATION FROM LINEAR PHASE
50
40
30
20
10
+135
+90
+45
0
-20
-30
-40
-50
-60
PHASE
GAIN
V
= 1V
P-P
OUT
0
0
0
200M
400M
600M
800M
1G
50
100
150
200
250
300
350
400
FREQUENCY (Hz)
FREQUENCY (MHz)
FIGURE 9. REVERSE GAIN AND PHASE (S
12
)
FIGURE 10. TWO-TONE, THIRD ORDER INTERMODULATION
INTERCEPT
-30
-40
-50
-60
-70
-80
-90
-100
-30
-40
100 MHz
100 MHz
-50
50 MHz
30 MHz
-60
-70
50 MHz
-80
-90
30 MHz
-100
-5
-3
-1
1
3
5
7
9
11
13
-5
-3
-1
1
3
5
7
9
11
13
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
FIGURE 11. SECOND HARMONIC DISTORTION vs P
FIGURE 12. THIRD HARMONIC DISTORTION vs P
OUT
OUT
5
HFA1110
o
Typical Performance Curves
V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
V
= 1V
OUT
50
45
40
35
30
25
20
15
10
5
0.8
0.4
0.2
0
-0.2
-0.4
-0.8
0
0
40
80
120 160 200 240 280 320 360
(pF)
-5
0
5
10
15
20
25
30
35
40
45
C
L
TIME (ns)
FIGURE 13. SETTLING RESPONSE
FIGURE 14. RECOMMENDED SERIES OUTPUT RESISTOR vs
C
LOAD
21
18
15
12
9
0.04
0.02
0
R
= 200Ω
L
R
= 100Ω
= 1kΩ
L
R
L
V
= 2.0V
O
P-P
V
= 1.0V
O
P-P
6
-0.02
-0.04
V
= 0.5V
800
O
P-P
3
0
200
300
400
500
600
700
900
1000
-3.0
-2.0
-1.0
0
1.0
2.0
3.0
INPUT RISE TIME (ps)
INPUT VOLTAGE (V)
FIGURE 15. OVERSHOOT vs INPUT RISETIME
FIGURE 16. INTEGRAL LINEARITY ERROR
22
21
20
19
18
17
16
15
14
13
12
11
10
9
25
24
23
22
21
20
19
18
8
7
6
5
17
-60
-40
-20
0
20
40
60
80
100 120
5
6
7
8
9
10
o
TOTAL SUPPLY VOLTAGE (V+ - V-, V)
TEMPERATURE ( C)
FIGURE 17. SUPPLY CURRENT vs SUPPLY VOLTAGE
FIGURE 18. SUPPLY CURRENT vs TEMPERATURE
6
HFA1110
o
Typical Performance Curves
V
= ±5V, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
A
L
32
30
28
26
24
22
20
18
16
14
12
10
8
10
9.8
9.6
9.4
9.2
9
8.8
8.6
8.4
8.2
8
6
4
-60
7.8
-60
-40
-20
0
20
40
60
o
80
100 120
-40
-20
0
20
40
60
o
80
100 120
TEMPERATURE ( C)
TEMPERATURE ( C)
FIGURE 19. BIAS CURRENT vs TEMPERATURE
FIGURE 20. OFFSET VOLTAGE vs TEMPERATURE
3.8
100
80
60
40
20
0
200
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3
160
120
80
40
0
+V
OUT
(R = 100Ω)
L
+V
OUT
(R = 50Ω)
L
|-V
OUT
|(R = 100Ω)
L
|-V
OUT
|(R = 50Ω)
L
I
NI
2.9
2.8
E
NI
-60
-40
-20
0
20
40
60
o
80
100 120
100
1K
10K
100K
TEMPERATURE ( C)
FREQUENCY (Hz)
FIGURE 21. OUTPUT VOLTAGE vs TEMPERATURE
FIGURE 22. INPUT NOISE vs FREQUENCY
7
HFA1110
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
63 mils x 44 mils x 19 mils
Type: Nitride
1600µm x 1130µm x 483µm
Thickness: 4kÅ ±0.5kÅ
METALLIZATION:
TRANSISTOR COUNT:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu(2%)
52
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
HFA1110
NC
IN
V-
NC
NC
NC
NC
V+
OUT
8
HFA1110
Small Outline Plastic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
N
INDEX
AREA
0.25(0.010)
M
B M
H
E
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
NOTES
A
A1
B
C
D
E
e
0.0532
0.0040
0.013
0.0688
0.0098
0.020
-
1
2
3
L
-
9
SEATING PLANE
A
0.0075
0.1890
0.1497
0.0098
0.1968
0.1574
-
-A-
o
h x 45
D
3
4
-C-
α
0.050 BSC
1.27 BSC
-
e
A1
H
h
0.2284
0.0099
0.016
0.2440
0.0196
0.050
5.80
0.25
0.40
6.20
0.50
1.27
-
C
B
0.10(0.004)
5
0.25(0.010) M
C
A M B S
L
6
N
α
8
8
7
NOTES:
o
o
o
o
0
8
0
8
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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9
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