SIGC42T120CQ [INFINEON]
IGBT Chip in Fieldstop -technology; IGBT芯片的场终止 - 技术
| 型号： | SIGC42T120CQ |
| 厂家： | 
Infineon |
| 描述： | IGBT Chip in Fieldstop -technology |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC42T120CQ
IGBT Chip in Fieldstop -technology
FEATURES:
·
·
·
·
1200V Fieldstop technology 120µm chip
low turn-off losses
short tail current
This chip is used for:
IGBT Modules
C
·
positive temperature coefficient
Applications:
welding, SMPS, resonant
applications
G
·
Chip Type
VCE
ICn
Die Size
Package
Ordering Code
SIGC42T120CQ 1200V 25A
6.59 x 6.49 mm2
sawn on foil SP0002-04966
MECHANICAL PARAMETER:
mm2
Raster size
6.59 x 6.49
Emitter pad size
Gate pad size
2 x (2.18 x 1.58)
1.06 x 0.65
42.8 / 33.5
120
Area total / active
Thickness
µm
mm
grd
Wafer size
150
Flat position
90
Max.possible chips per wafer
Passivation frontside
Emitter metallization
332 pcs
Photoimide
3200 nm Al Si Cu
1400 nm Ni Ag –system
Collector metallization
Die bond
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Wire bond
Al, <500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005
SIGC42T120CQ
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
1200
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
75
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V , IC= 1.5mA
VGE=15V, IC=25A
1200
2.1
5.5
V
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
VGE(th)
ICES
IC=1mA , VGE=VCE
VCE=1200V , VGE=0V
VCE=0V , VGE=20V
3
µA
nA
IGES
120
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
VC E=25V,
min. typ.
max.
Input capacitance
Ciss
Coss
Crss
-
-
-
2020
pF
VGE=0V,
f=1MHz
Output capacitance
193
64
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
ns
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
-
-
-
-
38
25
Tj=125° C
VC C =600V,
IC =25A,
Turn-off delay time
Fall time
250
96
VGE=-15/15V,
RG= 22W
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005
SIGC42T120CQ
CHIP DRAWING:
Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005
SIGC42T120CQ
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
D-81726 München
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characteristics.
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005
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