SIGC42T170R2C [INFINEON]
IGBT Chip in NPT-technology; IGBT芯片在NPT技术
| 型号： | SIGC42T170R2C |
| 厂家： | 
Infineon |
| 描述： | IGBT Chip in NPT-technology |
| 文件： | 总4页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC42T170R2C
IGBT Chip in NPT-technology
C
FEATURES:
·
·
·
·
·
1700V NPT technology
280µm chip
positive temperature coefficient
easy paralleling
This chip is used for:
chip only
·
Applications:
drives
G
integrated gate resistor
·
Chip Type
VCE
ICn
Die Size
Package
Ordering Code
Q67050-A4117-
A003
6.51 x 6.51 mm2
sawn on foil
SIGC42T170R2C
1700V 17A
MECHANICAL PARAMETER:
mm2
Raster size
6.51 x 6.51
42.38 / 23.8
2x( 1.7x3.2)
1.2 x 1.2
280
Area total / active
Emitter pad size
Gate pad size
Thickness
µm
mm
deg
Wafer size
150
Flat position
90
Max.possible chips per wafer
Passivation frontside
Emitter metalization
328 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metalization
Die bond
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003
SIGC42T170R2C
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
1700
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
51
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V , IC=900µA
VGE=15V, IC=17A
1700
2.2
2.7
5.5
3.2
6.5
4
V
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
VGE(th)
ICES
IC=750µA , VGE=VCE
VCE=1700V , VGE=0V
VCE=0V , VGE=20V
4.5
µA
nA
W
IGES
300
RGint
10
DYNAMIC CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
min. typ.
1165
max.
Input capacitance
Ciss
Coss
Crss
VC E=25V,
VGE=0V,
f=1MHz
pF
Output capacitance
tbd
tbd
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
ns
Tj=125° C
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
-
-
-
-
100
100
900
30
-
VC C =900V,
IC =17A
-
-
-
VGE=± 15V,
RG=90W
Turn-off delay time
Fall time
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003
SIGC42T170R2C
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003
SIGC42T170R2C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
chip only
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003
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