SIGC42T170R3GG [INFINEON]
IGBT3 Chip; IGBT3芯片
| 型号： | SIGC42T170R3GG |
| 厂家： | 
Infineon |
| 描述： | IGBT3 Chip |
| 文件： | 总4页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC42T170R3GG
IGBT3 Chip
FEATURES:
·
·
·
·
·
1700V Trench + Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
This chip is used for:
· power module
C
E
Applications:
drives
G
·
Chip Type
VCE
ICn
Die Size
6.5 x 6.46 mm2
Package
Ordering Code
Q67050-
A4261-A101
SIGC42T170R3G 1700V 29A
sawn on foil
MECHANICAL PARAMETER:
mm
Raster size
6.5 x 6.46
4.27 x 4.27
1.18 x 1.09
42 / 28.7
190
Emitter pad size
Gate pad size
Area total / active
Thickness
mm2
µm
Wafer size
150
mm
grd
Flat position
180
Max.possible chips per wafer
Passivation frontside
Emitter metalization
338 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metalization
Die bond
electrically conductive glue or solder
Wire bond
Al, <500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L7751B, Edition 1, 08.01.04
SIGC42T170R3GG
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
1700
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
87
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V , IC= 1.5mA
VGE=15V, IC=29A
1700
1.6
2
2.4
6.4
2
V
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
VGE(th)
ICES
IC=1.2mA , VGE=VCE
VCE=1700V , VGE=0V
VCE=0V , VGE=20V
5.2
5.8
µA
nA
W
IGES
600
RGint
32
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
VC E=25V,
min. typ.
2500
max.
Input capacitance
Ciss
Coss
Crss
pF
VGE=0V,
f=1MHz
Output capacitance
105
84
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
µs
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
400
50
Tj=125° C
VC C =900V,
IC =29A,
Turn-off delay time
Fall time
800
300
VGE=-15/15V,
RG= 18W
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L7751B, Edition 1, 08.01.04
SIGC42T170R3GG
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L7751B, Edition 1, 08.01.04
SIGC42T170R3GG
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L7751B, Edition 1, 08.01.04
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