SIGC42T120CX1SA5 [INFINEON]
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, 6.59 X 6.49 MM, DIE-3;
| 型号： | SIGC42T120CX1SA5 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, 6.59 X 6.49 MM, DIE-3 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC42T120C
IGBT Chip in NPT-technology
Features:
This chip is used for:
C
1200V NPT technology
low turn-off losses
positive temperature coefficient
easy paralleling
power module
BUP 314
Applications:
drives
G
E
Chip Type
VCE
IC
Die Size
Package
SIGC42T120C
1200V 25A
6.59 x 6.49 mm2
sawn on foil
Mechanical Parameter
Raster size
6.59 x 6.49
Emitter pad size
Gate pad size
Area total
2 x ( 1.58 x 2.18 )
1.06 x 0.65
42.8
mm2
Thickness
200
µm
Wafer size
150
mm
Max.possible chips per wafer
Passivation frontside
Pad metal
334
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Backside metal
Die bond
Electrically conductive glue or solder
Wire bond
Al, <500µm
Reject ink dot size
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Recommended storage environment
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7151MM, Edition 2.1, 14.10.2008
SIGC42T120C
Maximum Ratings
Parameter
Symbol
VC E
Value
Unit
1200
V
A
A
Collector-Emitter voltage, Tvj =25 C
DC collector current, limited by Tvj max
Pulsed collector current, tp limited by Tvj max
Gate emitter voltage
1 )
IC
Ic, p ul s
VG E
75
V
20
Junction temperature range
Tvj
Tvj
tSC
-55 ... +175
-55...+150
10
°C
C
µs
Operating junction temperature
Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 150°C
IC, ma x = 50A, VCE, ma x = 1200V
Tvj 150°C
Reverse bias safe operating area 2 ) (RBSOA)
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
Static Characteristic (tested on wafer), Tvj =25 C
Value
Parameter
Symbol
Conditions
Unit
min.
1200
2.0
typ.
max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
V(BR)CES
VCEsat
VGE(th)
ICES
VGE=0V , IC= 1.5mA
VGE=15V, IC=25A
2.5
5.5
3.0
6.5
3.1
120
V
IC=1mA , VGE=VCE
VCE=1200V , VGE=0V
VCE=0V , VGE=20V
4.5
µA
nA
IGES
rG
none
Dynamic Characteristic (not subject to production test - verified by design / characterization),
Tvj =25 C
Value
Parameter
Symbol
Conditions
Unit
min. typ.
1650
max.
Input capacitance
Ci es
Coe s
Cre s
VC E =25V,
VG E =0V,
f=1MHz
Output capacitance
250
110
pF
Reverse transfer capacitance
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7151MM, Edition 2.1, 14.10.2008
SIGC42T120C
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7151MM, Edition 2.1, 14.10.2008
SIGC42T120C
Chip Drawing
G
E
E = Emitter pad
G = Gate pad
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7151MM, Edition 2.1, 14.10.2008
SIGC42T120C
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7151MM, Edition 2.1, 14.10.2008
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