Q67040-S4012-A2 [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated); SIPMOS大功率晶体管( N沟道增强模式的逻辑电平雪崩额定)型号: | Q67040-S4012-A2 |
厂家: | Infineon |
描述: | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) |
文件: | 总8页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUZ 101 SL
SPP20N05L
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
Package
Ordering Code
VDS
ID
RDS(on
)
W
BUZ 101 SL
55 V
20 A
0.07
TO-220 AB
Q67040-S4012-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
A
D
T = 25 °C
20
14
C
T = 100 °C
C
Pulsed drain current
I
Dpuls
T = 25 °C
80
C
Avalanche energy, single pulse
E
mJ
AS
W
I = 20 A, V = 25 V, R = 25
D
DD
GS
L = 450 µH, T = 25 °C
90
20
5.5
j
Avalanche current,limited by T
I
A
jmax
AR
Avalanche energy,periodic limited by T
Reverse diode dv/dt
E
mJ
jmax
AR
dv/dt
kV/µs
I = 20 A, V = 40 V, di /dt = 200 A/µs
S
DS
F
T
= 175 °C
6
jmax
Gate source voltage
Power dissipation
V
±
14
V
GS
P
W
tot
T = 25 °C
55
C
Semiconductor Group
1
29/Jan/1998
BUZ 101 SL
SPP20N05L
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
T
-55 ... + 175
-55 ... + 175
°C
j
Storage temperature
T
stg
£
£
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
R
2.7
62
K/W
thJC
R
thJA
55 / 175 / 56
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 °C
V
V
I
V
(BR)DSS
V
55
-
-
GS
D
j
Gate threshold voltage
I = 40 µA
GS(th)
V
=V
1.2
1.6
2
GS DS, D
Zero gate voltage drain current
µA
DSS
V
V
V
= 50 V, V = 0 V, T = -40 °C
-
-
0.1
1
DS
DS
DS
GS
j
= 50 V, V = 0 V, T = 25 °C
-
-
0.1
-
GS
j
= 50 V, V = 0 V, T = 150 °C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
nA
GSS
V
-
10
100
GS
DS
W
Drain-Source on-resistance
R
DS(on)
V
= 4.5 V, I = 14 A
-
-
0.057
0.034
0.07
0.04
GS
GS
D
V
= 10 V, I = 14 A
D
Semiconductor Group
2
29/Jan/1998
BUZ 101 SL
SPP20N05L
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Dynamic Characteristics
Transconductance
g
S
fs
³
V
2 I
R I = 14 A
7
14
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
t
pF
iss
V
-
560
170
95
700
215
120
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
rss
V
-
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Turn-on delay time
= 30 V, V = 4.5 V, I = 20 A
ns
d(on)
V
DD
GS
D
W
R = 10
-
-
-
15
35
15
25
55
25
G
Rise time
= 30 V, V = 4.5 V, I = 20 A
t
t
t
r
V
DD
GS
D
W
R = 10
G
Turn-off delay time
= 30 V, V = 4.5 V, I = 20 A
d(off)
V
DD
GS
D
W
R = 10
G
Fall time
f
V
= 30 V, V = 4.5 V, I = 20 A
GS D
DD
W
R = 10
-
-
-
-
-
15
25
1.2
23
36
-
G
Gate charge at threshold
= 40 V, I 0.1 A, V =0 to 1 V
Q
Q
Q
V
nC
g(th)
V
³
0.8
15
DD
D
GS
Gate charge at 5.0 V
= 40 V, I = 20 A, V =0 to 5 V
g(5)
V
DD
D
GS
Gate charge total
= 40 V, I = 20 A, V =0 to 10 V
g(total)
(plateau)
V
24
DD
D
GS
Gate plateau voltage
= 40 V, I = 20 A
V
V
4.06
DD
D
Semiconductor Group
3
29/Jan/1998
BUZ 101 SL
SPP20N05L
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
I
A
S
T = 25 °C
-
-
-
-
-
-
20
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
80
C
Inverse diode forward voltage
V
t
V
SD
V
= 0 V, I = 40 A
1.12
50
0.12
1.8
75
GS
F
Reverse recovery time
ns
µC
rr
V = 30 V, I =l di /dt = 100 A/µs
R
F
S,
F
Reverse recovery charge
Q
rr
V = 30 V, I =l di /dt = 100 A/µs
0.18
R
F
S,
F
Semiconductor Group
4
29/Jan/1998
BUZ 101 SL
SPP20N05L
Power dissipation
Drain current
¦
¦
I = (T )
D C
P
= (T )
tot
C
³
parameter: V
4 V
GS
60
W
22
A
50
45
40
35
30
25
20
15
10
5
18
Ptot
ID
16
14
12
10
8
6
4
2
0
0
0
20 40 60 80 100 120 140 °C 180
0
20 40 60 80 100 120 140 °C 180
TC
TC
Safe operating area
Transient thermal impedance
¦
¦
= (t )
th JC p
I = (V
)
Z
D
DS
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 1
K/W
10 3
A
10 0
ID
ZthJC
10 2
t
= 28.0µs
p
10 -1
100 µs
D = 0.50
0.20
10 -2
10 1
0.10
0.05
0.02
10 -3
1 ms
0.01
single pulse
10 ms
10 0
10 -4
10 0
10 1
V 10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
DC
VDS
tp
Semiconductor Group
5
29/Jan/1998
BUZ 101 SL
SPP20N05L
Typ. output characteristics
Typ. drain-source on-resistance
¦ (
¦ (
I = V
)
R
= I )
D
DS
DS (on)
D
parameter: t = 80 µs , T = 25 °C
parameter: t = 80 µs, T = 25 °C
p
j
p
j
45
A
0.22
P
tot = 55W
l
a
b
c
d
i
j
h
k
W
g
V
[V]
GS
a
0.18
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
ID
RDS (on)
35
30
25
20
15
10
b
c
d
e
f
f
0.16
0.14
0.12
0.10
0.08
0.06
0.04
e
g
h
i
d
j
k
l
e
f
c
a
g
h
i
j
V
[V] =
b
GS
a
5
0
c
d
e
f
g
h
i
j
0.02
0.00
b
3.5 4.0 4.5 5.0 5.5 6.0
6.5 7.0 8.0 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0
4
8
12 16 20 24 28
A
36
VDS
ID
Typ. transfer characteristics ID = f (VGS
)
parameter: t = 80 µs
p
V
³
2 x I x R
DS
D
DS(on)max
80
A
ID
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
29/Jan/1998
BUZ 101 SL
SPP20N05L
Gate threshold voltage
= f (T )
Drain-source on-resistance
¦
V
R
= (T )
GS(th)
j
DS (on)
j
parameter: I = 14 A, V = 4.5 V
parameter:VGS=VDS,ID = 40µA
D
GS
0.24
3.0
V
W
2.6
0.20
VGS(th) 2.4
2.2
RDS (on)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
2.0
1.8
1.6
1.4
98%
typ
1.2
1.0
max
0.8
0.6
typ
0.4
0.02
0.00
0.2
0.0
min
-60
-20
20
60
100
°C
Tj
180
-60
-20
20
60
100
140
V
Tj
200
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
¦
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V = 0V, f = 1MHz
j
p
GS
10 4
10 2
pF
A
C
IF
10 3
10 2
10 1
10 1
10 0
10 -1
Ciss
Coss
Crss
= 25 °C typ
Tj
Tj
Tj
= 175 °C typ
= 25 °C (98%)
Tj = 175 °C (98%)
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
Semiconductor Group
7
29/Jan/1998
BUZ 101 SL
SPP20N05L
Avalanche energy EAS = f (Tj)
parameter:ID=20A,VDD =25 V
Typ. gate charge
¦
V
= (Q
)
GS
Gate
parameter: I
= 20 A
RGS =25
W , L = 450µH
D puls
100
16
V
mJ
80
70
60
50
40
30
20
EAS
VGS
12
10
8
V
V
DS max
0,2
0,8
DS max
6
4
2
10
0
0
0
20
40
60
80 100 120 140
°C 180
4
8
12
16
20
24
28 nC 34
QGate
Tj
Drain-source breakdown voltage
¦
= (T )
j
V
(BR)DSS
65
V
V(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60
100
°C
Tj
180
Semiconductor Group
8
29/Jan/1998
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