Q67040-S4121-A2 [INFINEON]
SIPMOS Power Transistor; SIPMOS功率晶体管![Q67040-S4121-A2](http://pdffile.icpdf.com/pdf1/p00057/img/icpdf/Q67040-S4121_300595_icpdf.jpg)
型号: | Q67040-S4121-A2 |
厂家: | ![]() |
描述: | SIPMOS Power Transistor |
文件: | 总8页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SPD31N05
SPU31N05
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Type
Package
Ordering Code
VDS
ID
RDS(on
)
SPD31N05
SPU31N05
55 V
55 V
31 A
31 A
0.04
0.04
W
P-TO252
P-TO251
Q67040 - S4121 - A2
Q67040 - S4113 - A2
W
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
A
D
T = 25 °C
31
22
C
T = 100 °C
C
Pulsed drain current
I
Dpuls
T = 25 °C
124
C
Avalanche energy, single pulse
E
mJ
AS
W
I = 31 A, V = 25 V, R = 25
D
DD
GS
L = 291 µH, T = 25 °C
140
31
j
Avalanche current,limited by T
I
A
jmax
AR
Avalanche energy,periodic limited by T
E
7.5
mJ
jmax
AR
Reverse diode dv/dt
dv/dt
kV/µs
I = 31 A, V = 40 V, di /dt = 200 A/µs
S
DS
F
T
= 175 °C
6
jmax
Gate source voltage
Power dissipation
V
±
20
V
GS
P
W
tot
T = 25 °C
75
C
Semiconductor Group
1
30/Jan/1998
SPD31N05
SPU31N05
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
T
-55 ... + 175
-55 ... + 175
°C
j
Storage temperature
T
stg
£
Thermal resistance, junction - case
Thermal resistance, junction - ambient (PCB mount)**
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
R
2
K/W
thJC
£
R
50
100
thJA
R
£
thJA
55 / 175 / 56
** when mounted on 1 " square PCB ( FR4 );for recommended footprint
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 °C
V
V
(BR)DSS
V
55
-
-
GS
D
j
Gate threshold voltage
I = 50 µA
V
GS(th)
V
=V
2.1
3
4
GS DS, D
Zero gate voltage drain current
I
µA
DSS
V
V
V
= 50 V, V = 0 V, T = -40 °C
-
-
-
-
0.1
1
DS
DS
DS
GS
j
= 50 V, V = 0 V, T = 25 °C
0.1
-
GS
j
= 50 V, V = 0 V, T = 150 °C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
nA
GSS
V
-
-
10
100
GS
DS
W
Drain-Source on-resistance
= 10 V, I = 22 A
R
DS(on)
V
0.03
0.04
GS
D
Semiconductor Group
2
30/Jan/1998
SPD31N05
SPU31N05
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Dynamic Characteristics
Transconductance
g
S
fs
³
V
2 I
R I = 22 A
10
-
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
t
pF
iss
V
-
720
230
125
900
300
160
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
rss
V
-
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 31 A
ns
d(on)
V
DD
GS
D
W
R = 13
-
-
-
10
25
25
15
40
40
G
Rise time
= 30 V, V = 10 V, I = 31 A
t
t
t
r
V
DD
GS
D
W
R = 13
G
Turn-off delay time
= 30 V, V = 10 V, I = 31 A
d(off)
V
DD
GS
D
W
R = 13
G
Fall time
f
V
= 30 V, V = 10 V, I = 31 A
GS D
DD
W
R = 13
-
-
-
-
-
20
0.7
20
25
5.9
30
1
G
Gate charge at threshold
= 40 V, I 0.1 A, V =0 to 1 V
Q
Q
Q
V
nC
g(th)
V
³
DD
D
GS
Gate charge at 7.0 V
= 40 V, I = 31 A, V =0 to 7 V
g(7)
V
30
40
-
DD
D
GS
Gate charge total
= 40 V, I = 31 A, V =0 to 10 V
g(total)
(plateau)
V
DD
D
GS
Gate plateau voltage
= 40 V, I = 31 A
V
V
DD
D
Semiconductor Group
3
30/Jan/1998
SPD31N05
SPU31N05
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
I
A
S
T = 25 °C
-
-
-
-
-
-
31
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
124
1.8
85
C
Inverse diode forward voltage
V
t
V
SD
V
= 0 V, I = 62 A
1.2
55
0.1
GS
F
Reverse recovery time
ns
µC
rr
V = 30 V, I =l di /dt = 100 A/µs
R
F
S,
F
Reverse recovery charge
Q
rr
V = 30 V, I =l di /dt = 100 A/µs
0.15
R
F
S,
F
Semiconductor Group
4
30/Jan/1998
SPD31N05
SPU31N05
Power dissipation
Drain current
¦
¦
I = (T )
D C
P
= (T )
tot
C
³
parameter: V
10 V
GS
80
W
32
A
Ptot
ID
60
50
40
30
20
10
24
20
16
12
8
4
0
0
0
20 40 60 80 100 120 140 °C 180
0
20 40 60 80 100 120 140 °C 180
TC
TC
Safe operating area
Transient thermal impedance
¦
I = (V
)
DS
¦
= (t )
p
Z
D
th JC
parameter: D = 0, T = 25°C
parameter: D = t / T
C
p
10 3
10 1
K/W
A
10 0
ID
ZthJC
t
= 13.0µs
p
10 2
10 1
10 0
10 -1
D = 0.50
0.20
100 µs
10 -2
0.10
0.05
1 ms
0.02
10 -3
0.01
10 ms
single pulse
DC
10 -4
10 0
10 1
V 10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
VDS
tp
Semiconductor Group
5
30/Jan/1998
SPD31N05
SPU31N05
Typ. output characteristics
Typ. drain-source on-resistance
¦ (
¦ (
I = V
)
R
= I )
D
DS
DS (on)
D
parameter: t = 80 µs , T = 25 °C
parameter: t = 80 µs, T = 25 °C
p j
p
j
0.13
70
A
P
tot = 75W
l
k
W
j
a
b
c
d
e
f
g
60
55
50
45
40
35
30
25
20
15
10
0.11
V
[V]
GS
a
ID
i
RDS (on)
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
b
c
d
e
f
h
g
e
g
h
i
f
j
h
i
k
l
d
b
j
c
a
V
[V] =
b
GS
a
c
d
e
f
g
h
i
j
0.01
0.00
5
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.0
1.0
2.0
3.0
4.0
V
5.5
0
10
20
30
40
50
A
65
VDS
ID
Typ. transfer characteristics ID = f (VGS
)
parameter: t = 80 µs
p
V
³
2 x I x R
DS
D
DS(on)max
70
A
ID
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
30/Jan/1998
SPD31N05
SPU31N05
Drain-source on-resistance
Gate threshold voltage
= f (T )
¦
= (T )
j
R
DS (on)
V
GS(th)
j
parameter: I = 22 A, V = 10 V
D
GS
parameter:VGS=VDS, ID =50µA
0.13
5.0
V
W
0.11
4.4
RDS (on)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
VGS(th)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
98%
typ
max
typ
0.01
0.00
min
0.4
0.0
-60
-20
20
60
100
°C
Tj
180
-60
-20
20
60
100
140
V
Tj
200
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
¦
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V = 0V, f = 1MHz
j
p
GS
10 4
10 3
A
C
IF
pF
10 2
10 1
10 0
10 3
Ciss
= 25 °C typ
Tj
Tj
Tj
= 175 °C typ
= 25 °C (98%)
Coss
Tj = 175 °C (98%)
10 2
Crss
0
5
10
15
20
25
30
V
VDS
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
Semiconductor Group
7
30/Jan/1998
SPD31N05
SPU31N05
¦
Avalanche energy E = (T )
Typ. gate charge
AS
j
¦
parameter: I = 31 A, V = 25 V
V
= (Q
Gate
)
D
DD
GS
W
R
= 25 , L = 291 µH
parameter: I
= 31 A
D puls
GS
16
V
150
mJ
130
120
110
100
90
EAS
VGS
12
10
8
V
V
DS max
0,2
0,8
DS max
80
70
60
6
50
40
4
30
20
2
10
0
0
0
20
40
60
80 100 120 140
°C 180
4
8
12 16 20 24 28 32 nC 38
Tj
QGate
Drain-source breakdown voltage
¦
= (T )
j
V
(BR)DSS
65
V
V(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60
100
°C
Tj
180
Semiconductor Group
8
30/Jan/1998
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