Q67040-S4011-A2 [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated); SIPMOS大功率晶体管（N沟道增强型雪崩额定的dv / dt评分）
| 型号： | Q67040-S4011-A2 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ 102 S
SPP52N05
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
Package
Ordering Code
VDS
ID
RDS(on
)
W
BUZ 102 S
55 V
52 A
0.023
TO-220 AB
Q67040-S4011-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
A
D
T = 25 °C
52
37
C
T = 100 °C
C
Pulsed drain current
I
Dpuls
T = 25 °C
208
C
Avalanche energy, single pulse
E
mJ
AS
W
I = 52 A, V = 25 V, R = 25
D
DD
GS
L = 181 µH, T = 25 °C
245
52
j
Avalanche current,limited by T
I
A
jmax
AR
Avalanche energy,periodic limited by T
E
12
mJ
jmax
AR
Reverse diode dv/dt
dv/dt
kV/µs
I = 52 A, V = 40 V, di /dt = 200 A/µs
S
DS
F
T
= 175 °C
6
jmax
Gate source voltage
Power dissipation
V
±
20
V
GS
P
W
tot
T = 25 °C
120
C
Semiconductor Group
1
30/Jan/1998
BUZ 102 S
SPP52N05
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
T
-55 ... + 175
-55 ... + 175
°C
j
Storage temperature
T
stg
£
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
R
1.25
62
K/W
thJC
£
R
thJA
55 / 175 / 56
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 °C
V
V
I
V
(BR)DSS
V
55
-
-
GS
D
j
Gate threshold voltage
I = 90 µA
GS(th)
V
=V
2.1
3
4
GS DS, D
Zero gate voltage drain current
µA
DSS
V
V
V
= 50 V, V = 0 V, T = -40 °C
-
-
0.1
1
DS
DS
DS
GS
j
= 50 V, V = 0 V, T = 25 °C
-
-
0.1
-
GS
j
= 50 V, V = 0 V, T = 150 °C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
nA
GSS
V
-
-
10
100
GS
DS
W
Drain-Source on-resistance
= 10 V, I = 37 A
R
DS(on)
V
0.016
0.023
GS
D
Semiconductor Group
2
30/Jan/1998
BUZ 102 S
SPP52N05
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Dynamic Characteristics
Transconductance
g
S
fs
³
V
2 I
R I = 37 A
10
-
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
t
pF
iss
V
-
1220
410
210
1525
515
265
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
rss
V
-
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 52 A
ns
d(on)
V
DD
GS
D
W
R = 6.8
-
-
-
12
22
30
18
33
45
G
Rise time
= 30 V, V = 10 V, I = 52 A
t
t
t
r
V
DD
GS
D
W
R = 6.8
G
Turn-off delay time
= 30 V, V = 10 V, I = 52 A
d(off)
V
DD
GS
D
W
R = 6.8
G
Fall time
f
V
= 30 V, V = 10 V, I = 52 A
GS D
DD
W
R = 6.8
-
-
-
-
-
25
1.5
35
45
5.9
40
2.8
55
70
-
G
Gate charge at threshold
= 40 V, I = 0.1 A, V =0 to 1 V
Q
Q
Q
V
nC
g(th)
V
DD
D
GS
Gate charge at 7.0 V
= 40 V, I = 52 A, V =0 to 7 V
g(7)
V
DD
D
GS
Gate charge total
= 40 V, I = 52 A, V =0 to 10 V
g(total)
(plateau)
V
DD
D
GS
Gate plateau voltage
= 40 V, I = 52 A
V
V
DD
D
Semiconductor Group
3
30/Jan/1998
BUZ 102 S
SPP52N05
Electrical Characteristics,
Parameter
at T = 25°C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
I
A
S
T = 25 °C
-
-
-
-
-
-
52
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
208
1.7
C
Inverse diode forward voltage
V
t
V
SD
V
= 0 V, I = 104 A
1.2
70
0.15
GS
F
Reverse recovery time
ns
µC
rr
V = 30 V, I =l di /dt = 100 A/µs
105
0.25
R
F
S,
F
Reverse recovery charge
Q
rr
V = 30 V, I =l di /dt = 100 A/µs
R
F
S,
F
Semiconductor Group
4
30/Jan/1998
BUZ 102 S
SPP52N05
Power dissipation
Drain current
¦
¦
I = (T )
D C
P
= (T )
tot
C
³
parameter: V
10 V
GS
130
W
55
A
110
100
90
45
Ptot
ID
40
35
30
25
20
15
10
80
70
60
50
40
30
20
5
0
10
0
0
20 40 60 80 100 120 140 °C 180
0
20 40 60 80 100 120 140 °C 180
TC
TC
Safe operating area
Transient thermal impedance
¦
¦
= (t )
th JC p
I = (V
)
Z
D
DS
parameter: D = 0, T = 25°C
parameter: D = t / T
C
p
10 3
10 1
K/W
10 0
A
t
= 19.0µs
p
ID
ZthJC
10 2
10 1
10 0
10 -1
10 -2
10 -3
100 µs
D = 0.50
0.20
0.10
1 ms
0.05
10 ms
0.02
single pulse
10 -4
0.01
DC
10 -5
10 0
10 1
V 10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
VDS
tp
Semiconductor Group
5
30/Jan/1998
BUZ 102 S
SPP52N05
Typ. output characteristics
Typ. drain-source on-resistance
¦ (
¦ (
I = V
)
R
= I )
D
DS
DS (on)
D
parameter: t = 80 µs , T = 25 °C
parameter: t = 80 µs, T = 25 °C
p
j
p
j
120
A
0.070
P
tot = 120W
l
a
b
c
d
e
f
g
W
k
j
i
0.060
V
[V]
100
90
80
70
60
50
40
30
20
GS
a
h
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
ID
RDS (on)
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
b
c
d
e
f
g
e
f
g
h
i
h
j
d
b
k
l
i
j
c
a
k
V
[V] =
b
GS
a
c
d
e
f
g
h
i
j
k
10
0
0.005
0.000
4.55.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0
20
40
60
80
A
110
VDS
ID
Typ. transfer characteristics ID = f (VGS
)
parameter: t = 80 µs
p
V
³
2 x I x R
DS
D
DS(on)max
120
A
ID
80
60
40
20
0
0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
30/Jan/1998
BUZ 102 S
SPP52N05
Gate threshold voltage
= f (T )
Drain-source on-resistance
¦
V
R
= (T )
GS(th)
j
DS (on)
j
parameter: I = 37 A, V = 10 V
parameter:VGS=VDS, ID =90µA
D
GS
0.075
5.0
V
W
4.4
0.065
0.060
RDS (on)
VGS(th)
4.0
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
max
98%
typ
typ
min
0.4
0.0
0.005
0.000
-60
-20
20
60
100
°C
Tj
180
-60
-20
20
60
100
140
V
Tj
200
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
¦
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V = 0V, f = 1MHz
j
p
GS
10 4
10 3
A
C
IF
pF
10 2
10 1
10 0
Ciss
10 3
= 25 °C typ
Tj
Tj
Tj
Coss
= 175 °C typ
= 25 °C (98%)
Crss
Tj = 175 °C (98%)
10 2
0
5
10
15
20
25
30
V
VDS
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
Semiconductor Group
7
30/Jan/1998
BUZ 102 S
SPP52N05
¦
Avalanche energy E = (T )
Typ. gate charge
AS
j
¦
parameter: I = 52 A, V = 25 V
V
= (Q
Gate
)
D
DD
GS
W
R
= 25 , L = 181 µH
parameter: I
= 52 A
D puls
GS
260
mJ
16
V
220
200
180
160
140
120
100
80
EAS
VGS
12
10
8
V
V
DS max
0,2
0,8
DS max
6
4
60
40
2
20
0
0
0
20
40
60
80 100 120 140
°C 180
10
20
30
40
50 nC
QGate
65
Tj
Drain-source breakdown voltage
¦
= (T )
j
V
(BR)DSS
65
V
V(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60
100
°C
Tj
180
Semiconductor Group
8
30/Jan/1998
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