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Q67040-S4007-A2 [INFINEON]

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature); SIPMOS大功率晶体管（N沟道增强型雪崩额定的dv / dt额定175ΣC工作温度）
Q67040-S4007-A2
型号： Q67040-S4007-A2
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
SIPMOS大功率晶体管（N沟道增强型雪崩额定的dv / dt额定175ΣC工作温度）

晶体 晶体管
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BUZ 104 S  
SPP14N05  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• dv/dt rated  
• 175°C operating temperature  
• also in SMD available  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Ordering Code  
VDS  
ID  
RDS(on  
)
W
BUZ 104 S  
55 V  
13.5 A  
0.1  
TO-220 AB  
Q67040-S4007-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
13.5  
9.6  
C
T = 100 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
54  
C
Avalanche energy, single pulse  
I = 13.5 A, V = 25 V, R = 25  
E
mJ  
AS  
W
D
DD  
GS  
L = 571 µH, T = 25 °C  
52  
j
Avalanche current,limited by T  
I
13.5  
3.5  
A
jmax  
AR  
Avalanche energy,periodic limited by T  
Reverse diode dv/dt  
E
mJ  
jmax  
AR  
dv/dt  
kV/µs  
I = 13.5 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
Gate source voltage  
Power dissipation  
V
±
20  
V
GS  
P
W
tot  
T = 25 °C  
35  
C
Semiconductor Group  
1
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Operating temperature  
T
-55 ... + 175  
-55 ... + 175  
°C  
j
Storage temperature  
T
stg  
£
£
Thermal resistance, junction - case  
Thermal resistance, junction - ambient  
IEC climatic category, DIN IEC 68-1  
R
4.3  
62  
K/W  
thJC  
R
thJA  
55 / 175 / 56  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 °C  
V
V
I
V
(BR)DSS  
V
55  
-
-
GS  
D
j
Gate threshold voltage  
I = 20 µA  
GS(th)  
V
=V  
2.1  
3
4
GS DS, D  
Zero gate voltage drain current  
µA  
DSS  
V
V
V
= 50 V, V = 0 V, T = -40 °C  
-
-
0.1  
1
DS  
DS  
DS  
GS  
j
= 50 V, V = 0 V, T = 25 °C  
-
-
0.1  
-
GS  
j
= 50 V, V = 0 V, T = 150 °C  
100  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
-
-
10  
100  
0.1  
GS  
DS  
W
Drain-Source on-resistance  
= 10 V, I = 9.6 A  
R
DS(on)  
V
0.076  
GS  
D
Semiconductor Group  
2
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
³
V
2 I  
R I = 9.6 A  
4
-
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
t
pF  
iss  
V
-
270  
95  
50  
340  
120  
65  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
rss  
V
-
-
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 13.5 A  
ns  
d(on)  
V
DD  
GS  
D
W
R = 33  
-
-
-
9
15  
35  
30  
G
Rise time  
= 30 V, V = 10 V, I = 13.5 A  
t
t
t
r
V
DD  
GS  
D
W
R = 33  
22  
18  
G
Turn-off delay time  
= 30 V, V = 10 V, I = 13.5 A  
d(off)  
V
DD  
GS  
D
W
R = 33  
G
Fall time  
f
V
= 30 V, V = 10 V, I = 13.5 A  
GS D  
DD  
W
R = 33  
-
-
-
-
-
16.5  
0.33  
7.11  
9.5  
25  
0.5  
11  
14  
-
G
Gate charge at threshold  
= 40 V, I = 0.1 A, V =0 to 1 V  
Q
Q
Q
V
nC  
g(th)  
V
DD  
D
GS  
Gate charge at 7.0 V  
= 40 V, I = 13.5 A, V =0 to 7 V  
g(7)  
V
DD  
D
GS  
Gate charge total  
= 40 V, I = 13.5 A, V =0 to 10 V  
g(total)  
(plateau)  
V
DD  
D
GS  
Gate plateau voltage  
= 40 V, I = 13.5 A  
V
V
5.9  
DD  
D
Semiconductor Group  
3
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Reverse Diode  
Inverse diode continuous forward current  
I
A
S
T = 25 °C  
-
-
-
-
-
-
13.5  
54  
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
-
C
Inverse diode forward voltage  
V
t
V
SD  
V
= 0 V, I = 27 A  
1.17  
50  
0.1  
1.8  
75  
GS  
F
Reverse recovery time  
ns  
µC  
rr  
V = 30 V, I =l di /dt = 100 A/µs  
R
F
S,  
F
Reverse recovery charge  
Q
rr  
V = 30 V, I =l di /dt = 100 A/µs  
0.15  
R
F
S,  
F
Semiconductor Group  
4
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Power dissipation  
Drain current  
¦
¦
I = (T )  
D C  
P
= (T )  
tot  
C
³
parameter: V  
10 V  
GS  
14  
A
36  
W
28  
24  
20  
16  
12  
8
12  
Ptot  
ID  
11  
10  
9
8
7
6
5
4
3
2
4
1
0
0
0
20 40 60 80 100 120 140 °C 180  
0
20 40 60 80 100 120 140 °C 180  
TC  
TC  
Safe operating area  
Transient thermal impedance  
¦
¦
= (t )  
th JC p  
I = (V  
)
Z
D
DS  
parameter: D = 0, T = 25°C  
parameter: D = t / T  
C
p
10 1  
10 2  
t
= 3.3µs  
10 µs  
p
K/W  
A
ID  
ZthJC  
10 0  
10 1  
100 µs  
10 -1  
D = 0.50  
0.20  
1 ms  
10 0  
0.10  
10 ms  
0.05  
10 -2  
DC  
0.02  
single pulse  
0.01  
10 -1  
10 -3  
10 0  
10 1  
V 10 2  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
VDS  
tp  
Semiconductor Group  
5
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Typ. output characteristics  
Typ. drain-source on-resistance  
¦ (  
¦ (  
I = V  
)
R
= I )  
D
DS  
DS (on)  
D
parameter: t = 80 µs , T = 25 °C  
parameter: t = 80 µs, T = 25 °C  
p j  
p
j
0.32  
30  
A
P
tot = 35W  
l
k
j
a
b
c
d
e
f
g
h
W
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
V
[V]  
GS  
a
ID  
RDS (on)  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
9.0  
0.24  
0.20  
0.16  
0.12  
0.08  
i
b
c
d
e
f
h
g
e
g
h
i
f
j
i
k
l
10.0  
20.0  
j
d
b
k
6
c
a
V
[V] =  
b
4
GS  
a
0.04  
0.00  
c
d
e
f
g
h
i
j
k
2
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
5.0  
0
4
8
12  
16  
20  
A
26  
VDS  
ID  
Typ. transfer characteristics ID = f (VGS  
)
parameter: t = 80 µs  
p
V
³
2 x I x R  
DS  
D
DS(on)max  
35  
A
ID  
25  
20  
15  
10  
5
0
0
1
2
3
4
5
6
7
8
V
VGS  
10  
Semiconductor Group  
6
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Gate threshold voltage  
= f (T )  
Drain-source on-resistance  
¦
V
R
= (T )  
GS(th)  
j
DS (on)  
j
parameter: I = 9.6 A, V = 10 V  
parameter:VGS=VDS, ID =20µA  
D
GS  
0.32  
5.0  
V
W
4.4  
VGS(th)  
RDS (on)  
4.0  
0.24  
0.20  
0.16  
0.12  
0.08  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
98%  
max  
typ  
typ  
0.04  
0.00  
min  
0.4  
0.0  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
-60  
-20  
20  
60  
100  
140  
V
Tj  
200  
Typ. capacitances  
C = f (V  
Forward characteristics of reverse diode  
¦
)
I = (V  
)
SD  
DS  
F
parameter: T , t = 80 µs  
parameter:V = 0V, f = 1MHz  
j
p
GS  
10 3  
10 2  
A
C
IF  
pF  
Ciss  
10 1  
10 0  
10 -1  
10 2  
Coss  
Crss  
= 25 °C typ  
Tj  
Tj  
Tj  
= 175 °C typ  
= 25 °C (98%)  
Tj = 175 °C (98%)  
10 1  
0
5
10  
15  
20  
25  
30  
V
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
3.0  
VDS  
VSD  
Semiconductor Group  
7
29/Jan/1998  
BUZ 104 S  
SPP14N05  
Avalanche energy EAS = f (Tj)  
parameter:ID=13.5 A,VDD =25 V  
Typ. gate charge  
¦
V
= (Q  
)
GS  
Gate  
parameter: I  
= 14 A  
RGS =25  
W , L = 571 µH  
D puls  
60  
16  
V
mJ  
40  
30  
20  
EAS  
VGS  
12  
10  
8
V
V
DS max  
0,2  
0,8  
DS max  
6
4
10  
0
2
0
0
20  
40  
60  
80 100 120 140  
°C 180  
1
2
3
4
5
6
7
nC  
QGate  
9
Tj  
Drain-source breakdown voltage  
¦
= (T )  
j
V
(BR)DSS  
65  
V
V(BR)DSS  
61  
59  
57  
55  
53  
51  
49  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Semiconductor Group  
8
29/Jan/1998  

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