PTVA120501EAV1R0XTMA1

PTVA120501EA

Thermally-Enhanced High Power RF LDMOS FET

50 W, 50 V, 1200 – 1400 MHz

Description

The PTVA120501EA LDMOS FET is designed for use in power ampli-

ﬁer applications in the 1200 to 1400 MHz frequency band. Features

include high gain and thermally-enhanced package with bolt-down

ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

PTVA120501EA

Package H-36265-2

Features

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, T_CASE= 25°C,

300 µs pulse width, 10% duty cycle

•

Broadband input matching

High gain and efﬁciency

Typical Pulsed CW performance, 1200 – 1400MHz,

50 V, 300 µs pulse width, 10 % duty cycle, class AB

60

55

50

45

40

35

30

70

60

50

40

30

20

10

- Output power at P

- Efﬁciency = 55%

- Gain = 16 dB

= 54 W

1dB

Efficiency

•

Integrated ESD protection

Low thermal resistance

Output Power

Pb-free and RoHS compliant

Capable of withstanding a 10:1 load mismatch

(all phase angles) at 50 W peak under RF pulse,

300 μS, 10% duty cycle.

1200 MHz

1300 MHz

1400 MHz

a120501ea_g1-1

18

22

26

30

P_IN(dBm)

34

38

RF Characteristics

Pulsed RF Performance (tested in Inﬁneon test ﬁxture)

= 50 V, I = 50 mA, P

V

DD

= 50 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 μs pulse width, 10 % duty cycle

DQ

OUT

1

2

3

Characteristic

Gain

Symbol

Min

16.5

46

Typ

17

Max

—

Unit

dB

G

ps

Drain Efficiency

Return Loss

h_D

50

—

%

IRL

—

–10

–7

dB

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

RF Characteristics

Typical RF Performance (not subject to production test, veriﬁed by design/characterization in Inﬁneon test ﬁxture)

V

DD

= 50 V, I

= 50 mA, Input signal (t = 7 ns, t = 8 ns), 300 μs pulse width, 10% duty cycle, class AB test

DQ

r

f

P

1dB

P

3dB

Max

Mode of Op-

eration

ƒ

IRL

t

@

50 W*

t

@

f (ns)

50 W*

r (ns)

P

droop (pulse)

(MHz) (dB)

Gain

(dB)

Eff

(%)

P

(W)

Gain

(dB)

Eff

(%)

P

OUT

(W)

OUT

dB @ 50 W

Pulsed RF

1200

1300

1400

–8

–10

–8

16

56

57

55

60

14

58

57

78

0.20

0.15

5

<2

60

78

54

57

* Note = t and t are deﬁned as D between input and output rise and fall times

r

f

Typical RF Performance (not subject to production test, veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 50 V, I = 50 mA, 30 ms pulse width, 33% duty cycle, class AB test

V

DD

DQ

P

3dB

1dB

Mode of Op-

eration

ƒ

P

dB @ 50 W

droop (pulse)

Gain

(dB)

Eff

(%)

P

(W)

Gain

(dB)

Eff

(%)

P

OUT

(MHz)

(W)

Pulsed RF

1200

1300

1400

16

57

56

49

57

14

59

58

50

75

0.3

55

75

0.3

0.2

50

55

DC Characteristics

Characteristic

Conditions

Symbol

Min

105

—

Typ

—

Max

Unit

V

Drain-Source Breakdown Voltage

Drain Leakage Current

V

GS

= 0 V, I = 10 mA

V(

BR)DSS

—

1

DS

V

= 50 V, V = 0 V

I

—

μA

W

DS

GS

DSS

V

= 105 V, V = 0 V

—

10

—

4.0

1

GS

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

V

GS

= 10 V, V = 0.1 V

R

—

0.4

3.5

—

DS

DS(on)

V

= 50 V, I

= 50 mA

V

GS

3.0

—

V

DS

DQ

V

GS

= 10 V, V = 0 V

I

GSS

μA

DS

Data Sheet

2 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Maximum Ratings

Parameter

Symbol

Value

Unit

V

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

V

DSS

105

–6 to +12

0 to +55

225

V

GS

V

DD

Junction Temperature

Storage Temperature Range

T

J

°C

T

STG

–65 to +150

1.37

°C

Thermal Resistance (T

= 70°C, 50 W CW)

R

qJC

°C/W

CASE

Ordering Information

Type and Version

PTVA120501EA V1 R0

PTVA120501EA V1 R2

Order Code

Package Description

H-36265-2, bolt-down

Shipping

PTVA120501EAV1R0XTMA1

PTVA120501EAV1R2XTMA1

Tape & Reel, 50 pcs

Tape & Reel, 250 pcs

Typical Performance (data taken in a production test ﬁxture)

Small Signal CW Performance

Pulsed CW Performance

Gain & Input Return Loss

V_DD= 50 V, I_DQ= 50 mA

V_DD= 50 V, I_DQ= 1.5 A

19

17

15

13

11

9

-1

19

18

17

16

15

14

13

70

60

50

40

30

20

10

Gain

-5

Gain

-9

-13

-17

-21

1400 MHz

1200 MHz

1300 MHz

IRL

Efficiency

38

a120501ea_gcw-1

a120501ea_gcw-2

36

40

42

44

46

48

950

1050 1150 1250 1350 1450 1550

Output Power (dBm)

Frequency (MHz)

Data Sheet

3 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Typical Performance (cont.)

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, T_CASE= 25°C,

300 µs pulse width, 10% duty cycle

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, T_CASE= 25°C,

300 µs pulse width, 10% duty cycle

19

18

17

16

15

14

60

55

50

45

40

35

30

70

60

50

40

30

20

10

Efficiency

Gain

Output Power

1200 MHz

1300 MHz

1200 MHz

1300 MHz

1400 MHz

a120501ea_g1-2

a120501ea_g1-1

18

22

26

30

34

38

18

22

26

30

34

38

P_IN(dBm)

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, P_OUT= 50 W,

300 µs pulse width, 10% duty cycle

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, P_OUT= 50 W,

300 µs pulse width, 10% duty cycle

18.0

17.8

17.6

17.4

17.2

58

56

54

52

50

0.25

-5

Gain

0.20

0.15

0.10

0.05

0.00

-10

-15

-20

-25

-30

Power Droop

IRL

Efficiency

a120501ea_g1-4

a120501ea_g1-3

1150 1200 1250 1300 1350 1400 1450

Frequency (MHz)

Data Sheet

4 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Typical Performance (cont.)

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, T_CASE= 25°C,

16 ms pulse width, 50% duty cycle

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, T_CASE= 25°C,

16 ms pulse width, 50% duty cycle

60

55

50

45

40

35

30

70

60

50

40

30

20

10

19

18

17

16

15

14

Efficiency

Gain

Output Power

1200 MHz

1300 MHz

1400 MHz

1200 MHz

1300 MHz

1400 MHz

a120501ea_g4-1

a120501ea_g4-2

18

22

26

30

34

38

18

22

26

30

34

38

P_IN(dBm)

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, P_OUT= 50 W,

16 ms pulse width, 50% duty cycle

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, P_OUT= 50 W,

16 ms pulse width, 50% duty cycle

0.25

-5

17.4

17.2

17.0

16.8

16.6

60

58

56

54

52

Power Droop

Gain

0.20

0.15

0.10

0.05

0.00

-10

-15

-20

-25

-30

IRL

Efficiency

a120501ea_g4-4

a120501ea_g4-3

1150 1200 1250 1300 1350 1400 1450

Frequency (MHz)

Data Sheet

5 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Broadband Circuit Impedance

D

S

Z Source

Z Load

G

Z Source W

Z Load W

Freq

[MHz]

R

jX

R

jX

1200

1300

1400

8.07

5.13

5.64

–2.13

–0.95

2.24

3.66

3.90

3.25

4.97

4.56

5.36

Load Pull Performance

Load Pull at Max P

Point – 16 µs pulse width, 10% duty cycle, class AB, V

= 50 V, 50 mA

OUT

DD

Freq

[MHz]

Zl

[W]

P

[W]

P

[dB]

PAE Eff

[%]

Z

OUT

[W]

IN

OUT

G

[dBm]

1200

3.04 – j2.16

30.68

47.30

53.70

16.62

45.56

3.19 – j1.55

Load Pull at Max G Point – 16 µs pulse width, 10% duty cycle, class AB, V

= 50 V, 50 mA

T

DD

Freq

[MHz]

Zl

[W]

P

[W]

P

[dB]

PAE Eff

[%]

Z

OUT

[W]

IN

OUT

G

[dBm]

1200

3.04 – j2.16

27.50

46.10

40.74

18.60

57.50

2.88 – j4.11

Load Pull at Max Efﬁciency Point – 16 µs pulse width, 10% duty cycle, class AB, V

= 50 V, 50 mA

DD

Freq

[MHz]

Zl

[W]

P

[W]

P

[dB]

PAE Eff

[%]

Z

OUT

[W]

IN

OUT

G

[dBm]

1200

3.04 – j2.16

27.55

46.15

41.21

18.60

57.20

2.88 – j4.06

Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, V

= 50 V, 50 mA

DD

Freq

[MHz]

Zl

[W]

P

[W]

P

[dB]

PAE Eff

[%]

Z

OUT

[W]

IN

OUT

G

[dBm]

1200

3.04 – j2.16

28.70

46.57

45.39

17.87

50.46

2.92 – j3.12

Data Sheet

6 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Reference Circuit , 1200 – 1400 MHz

C211

RO3010, .025 (105)

R801

VDD

C206

C215

R804

R803

C803

C801

C802

C103

S3

R802

S2

R202

R101

C213

C209

R102

S1

C207

C210

C102

C106

C204

C208

C101

C214

RF_OUT

RF_IN

C104

C203

C105

C205

C201

VDD

C202

R201

C212

PTVA120501EA_IN_04

PTVA120501EA_OUT_04

a

1 2 0 5 0 1 e a _ C D _ 0 9 - 2 4 - 2 0 1 3

Reference circuit assembly diagram (not to scale)

Data Sheet

7 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Reference Circuit (cont.)

Reference Circuit Assembly

DUT

PTVA120501EA

LTN/PTVA120501EA V1

Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, ε = 6.15, ƒ = 1200 – 1400 MHz

Test Fixture Part No.

PCB

r

Components Information

Component

Input

Description

Suggested Manufacturer

P/N

C101

Capacitor, 39 pF

Capacitor, 1 µF

Capacitor, 33 pF

Capacitor, 2.7 pF

Capacitor, 10 pF

Capacitor, 10 µF

ATC

ATC100B390KW500XB

C4532X7R2A105M230KA

ATC100A330JW150XB

ATC800A2R7BT

ATC800A100JT

C102

TDK Corporation

C103

ATC

C104

ATC

C105

ATC

C106

TDK Corporation

C5750X5R1H106K230KA

ECJ-1VB1H102K

ERJ-8GEYJ102V

ERJ-8GEYJ100V

ERJ-8GEYJ202V

ERJ-3GEYJ122V

ERJ-3GEYJ132V

ERJ-8GEYJ100V

BCP56

C801, C802, C803 Capacitor, 1000 pF

Panasonic Electronic Components

Inﬁneon Technologies

Texas Instruments

R101

R102

R801

R802

R803

R804

S1

Resistor, 1000 W

Resistor, 10 W

Resistor, 2000 W

Resistor, 1200 W

Resistor, 1300 W

Resistor, 100 W

Transistor

S2

Voltage Regulator

Potentiometer, 2k W

LM78L05ACM

S3

Bourns Inc.

3224W-1-202E

Output

C201, C207

C202, C215

C203, C208

C204, C205

C206, C212

C209

Capacitor, 33 pF

Capacitor, 10 µF

Capacitor, 3.9 pF

Capacitor, 6.8 pF

Capacitor, 1 µF

ATC

ATC100A330JW150XB

C5750X5R1H106K230KA

ATC800A3R9BT

TDK Corporation

ATC

ATC800A6R8BT

TDK Corporation

C4532X7R2A105M230KA

SEK220M100ST

Capacitor, 22 µF

Capacitor, 100 µF

Capacitor, 6800 µF

Capacitor, 10 µF

Capacitor, 39 pF

Resistor, 5600 W

Cornell Dubilier Electronics (CDE)

ATC

C210

SK101M100ST

C211

ECO-S2AP682EA

SEK100M100ST

C213

C214

ATC100B390KW500XB

ERJ-8RQJ5R6V

R201, R202

Panasonic Electronic Components

Data Sheet

8 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA

Package Outline Speciﬁcations

Package H-36265-2

ALL FOUR

CORNERS

6.

45° X 2.03

[.080]

2X 7.11

[.280]

2.66±.51

[.105±.020]

D

S

LID

10.16±.25

[.400±.010]

FLANGE

3.05

15.49±.51

[.610±.020]

C

9.78

L

[.120]

[.385]

G

2X R1.52

[R.060]

C

L

4X R1.52

[R.060]

4X R0.63

15.23

[.600]

[R.025] MAX

SPH 1.57

[.062]

10.16±.25

[.400±.010]

3.61±.38

[.142±.015]

h

- 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1

20.31

[.800]

1.02

[.040]

6.

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ±±.12ꢀ ꢁ±.±±5ꢂ unless speciﬁed otherwise.

4. Pins: D – drain; G – gate; S – source

5. Lead thickness: ±.1± + ±.±51/–±.±25 mm ꢁ±.±±4 + ±.±±2/–±.±±1 inchꢂ.

6. Exposed metal plane on top and bottom of ceramic insulator.

ꢀ. Gold plating thickness: 1.14 ± ±.3ꢃ micron ꢁ45 ± 15 microinchꢂ.

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

http://www.inﬁneon.com/rfpower

Data Sheet

9 of 10

Rev. 02.2, 2017-02-07

PTVA120501EA V1

Revision History

Revision

Date

Data Sheet Type

Advance

Page

All

3

Subjects (major changes since last revision)

Data Sheet reﬂects advance speciﬁcation for product development

Data Sheet reﬂects released product speciﬁcation

Updated ordering information

01

2013-05-29

2013-09-24

2016-05-26

2017-02-07

02

Production

02.1

02.2

3

Updated operating voltage and junction temperature

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@inﬁneon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2017-02-07

Published by

Inﬁneon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

10 of 10

Rev. 02.2, 2017-02-07


型号：	PTVA120501EAV1R0XTMA1
厂家：	Infineon
描述：	RF Power Field-Effect Transistor,
文件：	总10页 (文件大小：544K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTVA120501EAV1R0XTMA1 [INFINEON]

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