PTVA123501EC [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 â 1400 MHz;
| 型号： | PTVA123501EC |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 â 1400 MHz |
| 文件： | 总14页 (文件大小：1499K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTVA123501EC
PTVA123501FC
Thermally-Enhanced High Power RF LDMOS FETs
350 W, 50 V, 1200 – 1400 MHz
Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed
for use in power amplifier applications in the 1200 MHz to 1400 MHz
frequency band. Features include high gain and thermally-enhanced
package with slotted and earless flanges.Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTVA123501EC
Package H-36248-2
PTVA123501FC
Package H-37248-2
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
60
55
50
45
40
35
30
80
70
60
50
40
30
20
Features
•ꢀ Broadband internal input and output matching
•ꢀ High gain and efficiency
Output Power
•ꢀ Integrated ESD protection
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
•ꢀ Low thermal resistance
•ꢀ Excellent ruggedness
1200 MHz
1300 MHz
1400 MHz
•ꢀ Pb-free and RoHS compliant
Efficiency
•ꢀ Capable of withstanding a 10:1 load
a123501ec_g1-1
mismatch (all phase angles) at 55.5 dBm
30
32
34
36
PIN (dBm)
38
40
42
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
= 50 V, I = 0.15 A, P
V
DD
= 350 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 µs pulse width, 12% duty cycle
DQ
OUT
1
2
3
Characteristic
Gain
Symbol
Min
16.5
54
Typ
17
Max
—
Unit
dB
G
ps
Drain Efficiency
Return Loss
hD
55
—
%
IRL
—
–12
–9
dB
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
= 150 mA, Input signal (t = 5 ns, t = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test
DQ r f
P
1dB
P
3dB
Max
Mode of
Operation
ƒ
IRL
t
@
350 W
t
@
f (ns)
350 W
r (ns)
P
droop (pulse)
(MHz) (dB)
Gain
Eff
(%)
P
Gain
(dB)
Eff
(%)
P
OUT
OUT
dB @ 350 W
(dB)
16.2
16.0
15.8
(W)
375
390
375
(W)
415
435
415
Pulsed RF
Pulsed RF
Pulsed RF
1200
1300
1400
–14
–14
–12
59
59
56
14.2
14.0
13.8
59
59
57
0.10
0.15
0.15
4
4
4
5<
5<
5<
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
= 150 mA, 30 ms pulse width, 30% duty cycle, class AB test
DQ
P
P
3dB
1dB
Mode of
Operation
ƒ
P
dB @ 300 W
droop (pulse)
Gain
(dB)
Eff
(%)
P
Gain
(dB)
Eff
(%)
P
OUT
OUT
(MHz)
(W)
316
324
315
(W)
350
355
355
Pulsed RF
Pulsed RF
Pulsed RF
1200
1300
1400
16
16
47
47
45
14
14
48
48
47
0.23
0.25
0.29
15.5
13.5
DC Characteristics
Characteristic
Conditions
Symbol
Min
105
—
Typ
—
Max
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
—
1.0
10.0
—
DS
V
V
= 50 V, V = 0 V
I
I
—
µA
µA
W
DS
DS
GS
DSS
DSS
= 105 V, V = 0 V
—
—
GS
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V = 0.1 V
R
DS(on)
—
0.1
3.35
—
DS
V
= 50 V, I
= 150 mA
V
GS
3
4
V
DS
DQ
V
GS
= 10 V, V = 0 V
I
GSS
—
1.0
µA
DS
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
105
V
GS
–6 to +12
200
V
T
°C
J
T
STG
–65 to +150
0.34
°C
Thermal Resistance (T
= 70°C, 300 W CW)
R
qJC
°C/W
CASE
Data Sheet
2 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Ordering Information
Type and Version
Order Code
Package Description
H-36248-2, bolt-down
H-36248-2, bolt-down
H-37248-2, earless
Shipping
PTVA123501EC V2 R0
PTVA123501EC V2 R250
PTVA123501FC V1 R0
PTVA123501FC V1 R250
PTVA123501ECV2R0XTMA1
PTVA123501ECV2R250XTMA1
PTVA123501FCV1R0XTMA1
PTVA123501FCV1R250XTMA1
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
H-37248-2, earless
See next page for Typical RF Performance
Data Sheet
3 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (data taken in production test fixture)
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
60
55
50
45
40
35
30
80
70
60
50
40
30
20
18
17
16
15
14
13
12
Output Power
Gain
1200 MHz
1300 MHz
1400 MHz
1200 MHz
1300 MHz
1400 MHz
a123501ec_g1-2
Efficiency
a123501ec_g1-1
30
32
34
36
PIN (dBm)
38
40
42
30
32
34
36
38
40
42
PIN (dBm)
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
300 µs pulse width, 12% duty cycle
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
300 µs pulse width, 12% duty cycle
0.2
0.15
0.1
-12
-14
-16
-18
-20
18
70
65
60
55
50
Power Droop
Gain
17
16
15
14
IRL
Efficiency
0.05
0
1100
a123501ec_g1-4
a123501ec_g1-3
1200
1300
1400
1500
1150 1200 1250 1300 1350 1400 1450
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
IDQ = 150 mA,VDD = 50 V, TCASE = 25°C,
2 ms pulse width, 10% duty cycle
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
2 ms pulse width, 10% duty cycle
18
17
16
15
14
13
12
60
80
70
60
50
40
30
20
Output Power
55
50
45
40
35
30
Gain
1200 MHz
1300 MHz
1400 MHz
1200 MHz
1300 MHz
1400 MHz
Efficiency
a123501ec_g2-2
a123501ec_g2-1
31
33
35
37
39
41
43
31
33
35
37
39
41
43
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
2 ms pulse width, 10% duty cycle
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
2 ms pulse width, 10% duty cycle
0.3
-10
18
17
16
15
14
70
65
60
55
50
0.25
0.2
-12
-14
-16
-18
-20
Gain
Power Droop
0.15
0.1
IRL
Efficiency
a123501ec_g2-4
0.05
a123501ec_g2-3
1100
1200
1300
1400
1500
1150 1200 1250 1300 1350 1400 1450
Frequency (MHz)
Frequency (MHz)
Data Sheet
5 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
IDQ = 150 mA,VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 20% duty cycle
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 20% duty cycle
60
80
70
60
50
40
30
20
18
17
16
15
14
13
12
55
Output Power
50
45
Gain
40
1200 MHz
1300 MHz
1200 MHz
35
30
1300 MHz
Efficiency
35
1400 MHz
1400 MHz
a123501ec_g3-1
a123501ec_g3-2
31
33
37
39
41
43
31
33
35
37
39
41
43
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 20% duty cycle
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 20% duty cycle
18
17
16
15
14
70
65
60
55
50
0.35
-6
0.3
0.25
0.2
-8
Power Droop
Gain
-10
-12
-14
-16
IRL
0.15
0.1
Efficiency
a123501ec_g3-3
a123501ec_g3-4
1150 1200 1250 1300 1350 1400 1450
1100
1200
1300
1400
1500
Frequency (MHz)
Frequency (MHz)
Data Sheet
6 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 50% duty cycle
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 50% duty cycle
18
17
16
15
14
13
12
60
80
70
60
50
40
30
20
55
Output Power
50
45
Gain
40
1200 MHz
1300 MHz
1200 MHz
35
30
1300 MHz
1400 MHz
Efficiency
35
1400 MHz
a123501ec_g4-2
a123501ec_g4-1
31
33
35
37
39
41
43
31
33
37
39
41
43
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 50% duty cycle
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 50% duty cycle
16
15
14
13
12
70
65
60
55
50
0.4
-2
0.3
0.2
0.1
0
-4
Power Droop
Gain
-6
-8
Efficiency
IRL
a123501ec_g4-3
-10
1500
a123501ec_g4-4
1100
1200
1300
1400
1500
1100
1200
1300
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
7 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
22 ms pulse width, 50% duty cycle
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
22 ms pulse width, 50% duty cycle
60
80
70
60
50
40
30
20
18
17
16
15
14
13
12
55
Output Power
50
45
Gain
40
1200 MHz
1200 MHz
1300 MHz
1300 MHz
1400 MHz
35
Efficiency
35
1400 MHz
30
a123501ec_g5-1
a123501ec_g5-2
31
33
37
39
41
43
31
33
35
37
39
41
43
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 330 W,
22 ms pulse width, 50% duty cycle
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 330 W,
22 ms pulse width, 50% duty cycle
0.4
0.3
0.2
0.1
0
-6
17
16
15
14
13
12
70
65
60
55
50
-8
Gain
Power Droop
-10
-12
-14
-16
Efficiency
IRL
a123501ec_5-4
a123501ec_g5-3
1100
1200
1300
1400
1500
1100
1200
1300
1400
1500
Frequency (MHz)
Frequency (MHz)
Data Sheet
8 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Broadband Circuit Impedance
D
S
Z Source W
Z Load W
Freq
[MHz]
Z Source
Z Load
R
jX
R
jX
1200
1300
1400
1.25
1.54
1.66
–1.99
–1.52
–1.58
1.96
1.59
1.26
–2.23
–2.03
–1.75
G
Load Pull Performance
Load Pull at Max P
Point – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 150 mA
OUT
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
[dB]
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
41.40
42.24
41.66
[dBm]
56.40
56.54
56.31
1200
1300
1400
1.91 – j2.04
2.72 – j3.13
4.83 – j1.46
436.52
450.82
427.56
15
53.80
54.48
53.27
1.30 – j2.03
1.25 – j1.94
1.03 – j1.94
14.30
14.65
Load Pull at Max G Point – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 150 mA
T
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
38.10
38.84
37.21
[dBm]
54.72
54.83
53.42
[dB]
16.62
15.99
16.21
1200
1300
1400
1.91 – j2.04
2.72 – j3.13
4.83 – j1.46
296.48
304.09
219.79
57.89
62.54
57.25
3.03 – j3.11
3.22 – j1.63
2.30 – j0.09
Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 150 mA
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
39.60
39.44
39.39
[dBm]
55.80
55.23
55.19
[dB]
16.20
15.79
15.80
1200
1300
1400
1.91 – j2.04
2.72 – j3.13
4.83 – j1.46
380.19
333.43
330.37
60.71
63.71
62.26
2.22 – j2.43
2.81 – j1.90
2.40 – j1.45
Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 150 mA
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
39.18
39.50
40
[dBm]
55.58
55.30
55.60
[dB]
16.4
15.8
15.6
1200
1300
1400
1.91 – j2.04
2.72 – j3.13
4.83 – j1.46
361.41
338.84
363.08
60.5
62.6
60.7
2.41 – j2.50
2.73 – j1.51
1.86 – j1.37
Data Sheet
9 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Reference Circuit
C201
C803
C801 R803 C802
RO6006, .025 (62)
R804
C206
C208
R802
S1
S3
S2
C101
VDD
R801
R202
R102
R101
C104
C207
C103
C211
C203
R103
C202
C102
RF_OUT
RF_IN
C205
C105
C106
C204
VDD
R201
C209
C210
PTVA123501EC_IN_02
RO6006, .025 (62)
PTVA123501EC_OUT_02
p
t v a 1 2 3 5 0 1 e c _ C D _ 0 7 - 1 6 - 2 0 1 3
Reference circuit assembly diagram (not to scale)*
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet
10 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTVA123501EC or PTVA123501FC
LTN/PTVA123501EC V2 or LTN/PTVA123501FC V1
Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, ε = 6.15
Test Fixture Part No.
PCB
r
Components Information
Component
Input
Description
Suggested Manufacturer
P/N
C101
Capacitor, 1 µF
Capacitor, 39 pF
Capacitor, 10 µF
Capacitor, 3 pF
Capacitor, 0.5 pF
Capacitor, 1000 pF
Resistor, 1000 W
Resistor, 5600 W
Resistor, 10 W
TDK Corporation
C4532X7R2A105M230KA
ATC100B390KW500XB
C5750X5R1H106K230KA
ATC100A3R0CW150XB
ATC100A0R5CW150XB
ECJ-1VB1H102K
ERJ-8GEYJ102V
ERJ-8GEYJ562V
ERJ-8GEYJ100V
ERJ-8GEYJ202V
ERJ-3GEYJ122V
ERJ-3GEYJ132V
BCP56
C102, C103
C104
ATC
TDK Corporation
C105
ATC
C106
ATC
C801, C802, C803
R101
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Infineon Technologies
Texas Instruments
R102
R103, R804
R801
Resistor, 2000 W
Resistor, 1200 W
Resistor, 1300 W
Transistor
R802
R803
S1
S2
Voltage Regulator
Potentiometer, 2k W
LM7805
S3
Bourns Inc.
3224W-1-202E
Output
C201
Capacitor, 6800 µF
Capacitor, 100 µF
Capacitor, 22 µF
Capacitor, 39 pF
Capacitor, 1 µF
Panasonic Electronic Components
Cornell Dubilier Electronics (CDE)
Cornell Dubilier Electronics (CDE)
ATC
ECO-S2AP682EA
C202
SK101M100ST
C203
SEK220M100ST
C204, C205, C207
C206, C210
C208, C209
C211
ATC100B390KW500XB
C4532X7R2A105M230KA
C5750X5R1H106K230KA
EEV-HD1H100P
TDK Corporation
Capacitor, 10 µF
Capacitor, 10 µF
Resistor, 5600 W
TDK Corporation
Panasonic Electronic Components
Panasonic Electronic Components
R201, R202
ERJ-8GEYJ562V
Data Sheet
11 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Package Outline Specifications
Package H-36248-2
45° X 2.720
[45° X .107]
C
L
4.826±0.510
[.190±0.020]
D
S
FLANGE 9.779
[.385]
+0.100
LID 9.398
C
L
–0.150
+0.004
19.431 ±0.510
[.765±0.020]
[.370
]
–0.006
2X R1.626
[R.064]
G
4X R1.524
[R.060]
2X 12.700
[.500]
27.940
[1.100]
19.812±0.200
[.780±0.008]
SPH 1.575
[0.062]
1.016
[.040]
C
L
3.632±0.380
[.143±0.015]
H-36248-2_po_01.1_03-29-2013
34.036
[1.340]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Data Sheet
12 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC
PTVA123501FC
Package Outline Specifications (cont.)
Package H-37248-2
45° X 2.720
[45° X .107]
C
L
+.381
4.826±0.510
[.190±0.020]
4X R0.508
-.127
+0.015
-0.005
D
R.020
[
]
+0.100
-0.150
LID 9.398
FLANGE 9.779
[.385]
+0.004
-0.006
C
L
19.431±0.510
[.765±0.020]
.370
[
]
G
2X 12.700
[.500]
SPH 1.575
[.062]
19.812±0.200
[.780±0.008]
1.016
[.040]
H-37248-2_po_10-04-2012
3.632±0.380
[.143±0.015]
C
L
20.574
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
13 of 14
Rev. 05.1, 2016-04-26
PTVA123501EC V2/ PTVA123501FC V1
Revision History
Revision
Date
Data Sheet Type
Preliminary
Page
All
Subjects (major changes since last revision)
Data Sheet reflects preliminary specification
Data Sheet reflects released product specification
01
02
03
2012-06-05
2013-03-06
2013-07-11
Production
All
Production
All
1
9
Updated to include FC version
Revised Pulsed RF performance table
Minor cosmetic changes only
Added package outline
12
04
2014-04-29
2014-06-26
Production
Production
All
1
Revised product from V1 to V2
Revised target RF Charateristics table
04.1
All
3
Corrected FC version to V1 throughout
Corrected package to H-36248-2 and H-37248-2 in ordering table
05
2015-07-07
2016-04-26
Production
Production
8
Added typical performance at 22ms, 50% pulse
Added ESD rating, updated ordering information
05.1
1, 3
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-04-26
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
14 of 14
Rev. 05.1, 2016-04-26
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