PTVA120501EAV1XWSA1 [INFINEON]

RF Power Field-Effect Transistor,;
PTVA120501EAV1XWSA1
型号: PTVA120501EAV1XWSA1
厂家: Infineon    Infineon
描述:

RF Power Field-Effect Transistor,

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中文:  中文翻译
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PTVA120501EA  
Thermally-Enhanced High Power RF LDMOS FET  
50 W, 50 V, 1200 – 1400 MHz  
Description  
The PTVA120501EA LDMOS FET is designed for use in power ampli-  
fier applications in the 1200 to 1400 MHz frequency band. Features  
include high gain and thermally-enhanced package with bolt-down  
flange.Manufactured withWolfspeed's advanced LDMOS process, this  
device provides excellent thermal performance and superior reliability.  
PTVA120501EA  
Package H-36265-2  
Features  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,  
300 µs pulse width, 10% duty cycle  
Broadband input matching  
High gain and efficiency  
Typical Pulsed CW performance, 1200 – 1400MHz,  
50 V, 300 µs pulse width, 10 % duty cycle, class AB  
60  
55  
50  
45  
40  
35  
30  
70  
60  
50  
40  
30  
20  
10  
- Output power at P  
- Efficiency = 55%  
- Gain = 16 dB  
= 54 W  
1dB  
Efficiency  
Integrated ESD protection  
Low thermal resistance  
Output Power  
Pb-free and RoHS compliant  
Capable of withstanding a 10:1 load mismatch  
(all phase angles) at 50 W peak under RF pulse,  
300 μS, 10% duty cycle.  
1200 MHz  
1300 MHz  
1400 MHz  
a120501ea_g1-1  
18  
22  
26  
30  
PIN (dBm)  
34  
38  
RF Characteristics  
Pulsed RF Performance (tested in Wolfspeed test fixture)  
= 50 V, I = 50 mA, P  
V
DD  
= 50 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 μs pulse width, 10 % duty cycle  
DQ  
OUT  
1
2
3
Characteristic  
Gain  
Symbol  
Min  
16.5  
46  
Typ  
17  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Return Loss  
hD  
50  
%
IRL  
–10  
–7  
dB  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Rev. 03, 2018-06-19  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  
PTVA120501EA  
2
RF Characteristics  
Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture)  
V
DD  
= 50 V, I  
= 50 mA, Input signal (t = 7 ns, t = 8 ns), 300 μs pulse width, 10% duty cycle, class AB test  
DQ  
r
f
P
1dB  
P
3dB  
Max  
Mode of Op-  
eration  
ƒ
IRL  
t
@
50 W*  
t
@
f (ns)  
50 W*  
r (ns)  
P
droop (pulse)  
(MHz) (dB)  
Gain  
(dB)  
Eff  
(%)  
P
(W)  
Gain  
(dB)  
Eff  
(%)  
P
OUT  
(W)  
OUT  
dB @ 50 W  
Pulsed RF  
Pulsed RF  
Pulsed RF  
1200  
1300  
1400  
–8  
–10  
–8  
16  
16  
16  
56  
57  
55  
60  
14  
14  
14  
58  
58  
57  
78  
0.20  
0.20  
0.15  
5
5
5
<2  
<2  
<2  
60  
78  
54  
57  
* Note = t and t are defined as D between input and output rise and fall times  
r
f
Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture)  
= 50 V, I = 50 mA, 30 ms pulse width, 33% duty cycle, class AB test  
V
DD  
DQ  
P
P
3dB  
1dB  
Mode of Op-  
eration  
ƒ
P
dB @ 50 W  
droop (pulse)  
Gain  
(dB)  
Eff  
(%)  
P
(W)  
Gain  
(dB)  
Eff  
(%)  
P
OUT  
OUT  
(MHz)  
(W)  
Pulsed RF  
Pulsed RF  
Pulsed RF  
1200  
1300  
1400  
16  
16  
16  
57  
56  
49  
57  
14  
14  
14  
59  
58  
50  
75  
0.3  
55  
75  
0.3  
0.2  
50  
55  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
105  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
1
DS  
V
= 50 V, V = 0 V  
I
I
μA  
μA  
W
DS  
DS  
GS  
DSS  
DSS  
V
= 105 V, V = 0 V  
10  
4.0  
1
GS  
On-State Resistance  
Operating Gate Voltage  
Gate Leakage Current  
V
GS  
= 10 V, V = 0.1 V  
R
0.4  
3.5  
DS  
DS(on)  
V
= 50 V, I  
= 50 mA  
V
GS  
3.0  
V
DS  
DQ  
V
GS  
= 10 V, V = 0 V  
I
GSS  
μA  
DS  
Rev. 03, 2018-06-19  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  
PTVA120501EA  
3
Maximum Ratings  
Parameter  
Symbol  
Value  
105  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +12  
0 to +55  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
J
°C  
T
STG  
–65 to +150  
1.37  
°C  
Thermal Resistance (T  
= 70°C, 50 W CW)  
R
qJC  
°C/W  
CASE  
Ordering Information  
Type and Version  
PTVA120501EA V1 R0  
PTVA120501EA V1 R2  
Order Code  
Package Description  
H-36265-2, bolt-down  
H-36265-2, bolt-down  
Shipping  
PTVA120501EA-V1-R0  
PTVA120501EA-V1-R2  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
Typical Performance (data taken in a production test fixture)  
Small Signal CW Performance  
Pulsed CW Performance  
Gain & Input Return Loss  
VDD = 50 V, IDQ = 50 mA  
VDD = 50 V, IDQ = 1.5 A  
19  
17  
15  
13  
11  
9
-1  
19  
18  
17  
16  
15  
14  
13  
70  
60  
50  
40  
30  
20  
10  
Gain  
-5  
Gain  
-9  
-13  
-17  
-21  
1400 MHz  
1200 MHz  
1300 MHz  
IRL  
Efficiency  
38  
a120501ea_gcw-1  
a120501ea_gcw-2  
36  
40  
42  
44  
46  
48  
950  
1050 1150 1250 1350 1450 1550  
Output Power (dBm)  
Frequency (MHz)  
Rev. 03, 2018-06-19  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PTVA120501EA  
4
Typical Performance (cont.)  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,  
300 µs pulse width, 10% duty cycle  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,  
300 µs pulse width, 10% duty cycle  
19  
18  
17  
16  
15  
14  
60  
55  
50  
45  
40  
35  
30  
70  
60  
50  
40  
30  
20  
10  
Efficiency  
Gain  
Output Power  
1200 MHz  
1300 MHz  
1200 MHz  
1300 MHz  
1400 MHz  
1400 MHz  
a120501ea_g1-2  
a120501ea_g1-1  
18  
22  
26  
30  
34  
38  
18  
22  
26  
30  
34  
38  
PIN (dBm)  
PIN (dBm)  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,  
300 µs pulse width, 10% duty cycle  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,  
300 µs pulse width, 10% duty cycle  
18.0  
17.8  
17.6  
17.4  
17.2  
58  
56  
54  
52  
50  
0.25  
-5  
Gain  
0.20  
0.15  
0.10  
0.05  
0.00  
-10  
-15  
-20  
-25  
-30  
Power Droop  
IRL  
Efficiency  
a120501ea_g1-4  
a120501ea_g1-3  
1150 1200 1250 1300 1350 1400 1450  
1150 1200 1250 1300 1350 1400 1450  
Frequency (MHz)  
Frequency (MHz)  
Rev. 03, 2018-06-19  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PTVA120501EA  
5
Typical Performance (cont.)  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,  
16 ms pulse width, 50% duty cycle  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,  
16 ms pulse width, 50% duty cycle  
60  
55  
50  
45  
40  
35  
30  
70  
60  
50  
40  
30  
20  
10  
19  
18  
17  
16  
15  
14  
Efficiency  
Gain  
Output Power  
1200 MHz  
1300 MHz  
1400 MHz  
1200 MHz  
1300 MHz  
1400 MHz  
a120501ea_g4-1  
a120501ea_g4-2  
18  
22  
26  
30  
34  
38  
18  
22  
26  
30  
34  
38  
PIN (dBm)  
PIN (dBm)  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,  
16 ms pulse width, 50% duty cycle  
Power Sweep, Pulsed RF  
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,  
16 ms pulse width, 50% duty cycle  
0.25  
-5  
17.4  
17.2  
17.0  
16.8  
16.6  
60  
58  
56  
54  
52  
Power Droop  
Gain  
0.20  
0.15  
0.10  
0.05  
0.00  
-10  
-15  
-20  
-25  
-30  
IRL  
Efficiency  
a120501ea_g4-4  
a120501ea_g4-3  
1150 1200 1250 1300 1350 1400 1450  
1150 1200 1250 1300 1350 1400 1450  
Frequency (MHz)  
Frequency (MHz)  
Rev. 03, 2018-06-19  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PTVA120501EA  
6
Broadband Circuit Impedance  
D
S
Z Source  
Z Load  
G
Z Source W  
Z Load W  
Freq  
[MHz]  
R
jX  
R
jX  
1200  
1300  
1400  
8.07  
5.13  
5.64  
–2.13  
–0.95  
2.24  
3.66  
3.90  
3.25  
4.97  
4.56  
5.36  
Load Pull Performance  
Load Pull at Max P  
Point – 16 µs pulse width, 10% duty cycle, class AB, V  
= 50 V, 50 mA  
OUT  
DD  
Freq  
[MHz]  
Zl  
[W]  
P
P
P
[W]  
P
[dB]  
PAE Eff  
[%]  
Z
OUT  
[W]  
IN  
OUT  
OUT  
G
[dBm]  
[dBm]  
1200  
3.04 – j2.16  
30.68  
47.30  
53.70  
16.62  
45.56  
3.19 – j1.55  
Load Pull at Max G Point – 16 µs pulse width, 10% duty cycle, class AB, V  
= 50 V, 50 mA  
T
DD  
Freq  
[MHz]  
Zl  
[W]  
P
P
P
[W]  
P
[dB]  
PAE Eff  
[%]  
Z
OUT  
[W]  
IN  
OUT  
OUT  
G
[dBm]  
[dBm]  
1200  
3.04 – j2.16  
27.50  
46.10  
40.74  
18.60  
57.50  
2.88 – j4.11  
Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, V  
= 50 V, 50 mA  
DD  
Freq  
[MHz]  
Zl  
[W]  
P
P
P
[W]  
P
[dB]  
PAE Eff  
[%]  
Z
OUT  
[W]  
IN  
OUT  
OUT  
G
[dBm]  
[dBm]  
1200  
3.04 – j2.16  
27.55  
46.15  
41.21  
18.60  
57.20  
2.88 – j4.06  
Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, V  
= 50 V, 50 mA  
DD  
Freq  
[MHz]  
Zl  
[W]  
P
P
P
[W]  
P
[dB]  
PAE Eff  
[%]  
Z
OUT  
[W]  
IN  
OUT  
OUT  
G
[dBm]  
[dBm]  
1200  
3.04 – j2.16  
28.70  
46.57  
45.39  
17.87  
50.46  
2.92 – j3.12  
Rev. 03, 2018-06-19  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  
PTVA120501EA  
7
Reference Circuit , 1200 – 1400 MHz  
C211  
RO3010, .025 (105)  
RO3010, .025 (105)  
R801  
R804  
VDD  
C206  
C215  
R803  
C803  
C801  
C802  
C103  
S3  
R802  
S2  
R202  
R101  
C213  
C209  
R102  
S1  
C207  
C210  
C102  
C106  
C204  
C208  
C101  
C214  
RF_OUT  
RF_IN  
C104  
C203  
C105  
C205  
C201  
VDD  
C202  
R201  
C212  
PTVA120501EA_IN  
PTVA120501EA_OUT  
a12 050 1ea _C D_06 - 19 - 20 18  
Reference circuit assembly diagram (not to scale)  
Rev. 03, 2018-06-19  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PTVA120501EA  
8
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PTVA120501EA  
LTN/PTVA120501EA V1  
Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, ε = 6.15, ƒ = 1200 – 1400 MHz  
Test Fixture Part No.  
PCB  
r
Components Information  
Component  
Input  
Description  
Suggested Manufacturer  
P/N  
C101  
Capacitor, 39 pF  
Capacitor, 1 µF  
Capacitor, 33 pF  
Capacitor, 2.7 pF  
Capacitor, 10 pF  
Capacitor, 10 µF  
ATC  
ATC100B390KW500XB  
C4532X7R2A105M230KA  
ATC100A330JW150XB  
ATC800A2R7BT  
ATC800A100JT  
C102  
TDK Corporation  
C103  
ATC  
C104  
ATC  
C105  
ATC  
C106  
TDK Corporation  
C5750X5R1H106K230KA  
ECJ-1VB1H102K  
ERJ-8GEYJ102V  
ERJ-8GEYJ100V  
ERJ-8GEYJ202V  
ERJ-3GEYJ122V  
ERJ-3GEYJ132V  
ERJ-8GEYJ100V  
BCP56  
C801, C802, C803 Capacitor, 1000 pF  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Infineon Technologies  
Texas Instruments  
R101  
R102  
R801  
R802  
R803  
R804  
S1  
Resistor, 1000 W  
Resistor, 10 W  
Resistor, 2000 W  
Resistor, 1200 W  
Resistor, 1300 W  
Resistor, 100 W  
Transistor  
S2  
Voltage Regulator  
Potentiometer, 2k W  
LM78L05ACM  
S3  
Bourns Inc.  
3224W-1-202E  
Output  
C201, C207  
C202, C215  
C203, C208  
C204, C205  
C206, C212  
C209  
Capacitor, 33 pF  
Capacitor, 10 µF  
Capacitor, 3.9 pF  
Capacitor, 6.8 pF  
Capacitor, 1 µF  
ATC  
ATC100A330JW150XB  
C5750X5R1H106K230KA  
ATC800A3R9BT  
TDK Corporation  
ATC  
ATC  
ATC800A6R8BT  
TDK Corporation  
C4532X7R2A105M230KA  
SEK220M100ST  
Capacitor, 22 µF  
Capacitor, 100 µF  
Capacitor, 6800 µF  
Capacitor, 10 µF  
Capacitor, 39 pF  
Resistor, 5600 W  
Cornell Dubilier Electronics (CDE)  
Cornell Dubilier Electronics (CDE)  
Cornell Dubilier Electronics (CDE)  
Cornell Dubilier Electronics (CDE)  
ATC  
C210  
SK101M100ST  
C211  
ECO-S2AP682EA  
SEK100M100ST  
C213  
C214  
ATC100B390KW500XB  
ERJ-8RQJ5R6V  
R201, R202  
Panasonic Electronic Components  
Rev. 03, 2018-06-19  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PTVA120501EA  
9
Package Outline Specifications  
Package H-36265-2  
ALL FOUR  
CORNERS  
6.  
45° X 2.03  
[.080]  
2X 7.11  
[.280]  
2.66±.51  
[.105±.020]  
D
S
LID  
10.16±.25  
[.400±.010]  
FLANGE  
3.05  
15.49±.51  
[.610±.020]  
C
9.78  
L
[.120]  
[.385]  
G
2X R1.52  
[R.060]  
C
L
4X R1.52  
[R.060]  
4X R0.63  
15.23  
[.600]  
[R.025] MAX  
SPH 1.57  
[.062]  
10.16±.25  
[.400±.010]  
3.61±.38  
[.142±.015]  
h
- 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1  
20.31  
[.800]  
1.02  
[.040]  
6.  
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances ±±.12ꢀ ꢁ±.±±5ꢂ unless specified otherwise.  
4. Pins: D – drain; G – gate; S – source  
5. Lead thickness: ±.1± + ±.±51/–±.±25 mm ꢁ±.±±4 + ±.±±2/–±.±±1 inchꢂ.  
6. Exposed metal plane on top and bottom of ceramic insulator.  
ꢀ. Gold plating thickness: 1.14 ± ±.3ꢃ micron ꢁ45 ± 15 microinchꢂ.  
Rev. 03, 2018-06-19  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PTVA120501EA  
10  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
All  
All  
3
Subjects (major changes since last revision)  
Data Sheet reflects advance specification for product development  
Data Sheet reflects released product specification  
Updated ordering information  
01  
2013-05-29  
2013-09-24  
2016-05-26  
2017-02-07  
2018-06-19  
02  
Production  
Production  
Production  
Production  
02.1  
02.2  
03  
3
Updated operating voltage and junction temperature  
Converted to Wolfspeed Data Sheet  
All  
For more information, please contact:  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
www.wolfspeed.com/RF  
Sales Contact  
RFSales@wolfspeed.com  
RF Product Marketing Contact  
RFMarketing@wolfspeed.com  
919.407.7816  
Notes  
Disclaimer  
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet  
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights  
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-  
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for  
information purposes only. These values can and do vary in different applications and actual performance can vary over  
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products  
are not designed, intended or authorized for use as components in applications intended for surgical implant into the  
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or  
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.  
Rev. 03, 2018-06-19  
www.wolfspeed.com  

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INFINEON

PTVA123501FCV1R0

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz
INFINEON

PTVA123501FCV1R0XTMA1

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz
INFINEON

PTVA123501FCV1R250

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz
INFINEON