PTVA120501EAV1R250XTMA1 概述
RF Power Field-Effect Transistor, 射频场效应晶体管
PTVA120501EAV1R250XTMA1 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.58 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
PTVA120501EAV1R250XTMA1 数据手册
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PDF下载PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Features
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
•
•
•
Broadband input matching
High gain and efficiency
Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10 % duty cycle, class AB
60
55
50
45
40
35
30
70
60
50
40
30
20
10
- Output power at P
- Efficiency = 55%
- Gain = 16 dB
= 54 W
1dB
Efficiency
•
•
•
•
Integrated ESD protection
Low thermal resistance
Output Power
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 50 W peak under RF pulse,
300 μS, 10% duty cycle.
1200 MHz
1300 MHz
1400 MHz
a120501ea_g1-1
18
22
26
30
PIN (dBm)
34
38
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
= 50 V, I = 50 mA, P
V
DD
= 50 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 μs pulse width, 10 % duty cycle
DQ
OUT
1
2
3
Characteristic
Gain
Symbol
Min
16.5
46
Typ
17
Max
—
Unit
dB
G
ps
Drain Efficiency
Return Loss
hD
50
—
%
IRL
—
–10
–7
dB
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
= 50 mA, Input signal (t = 7 ns, t = 8 ns), 300 μs pulse width, 10% duty cycle, class AB test
DQ
r
f
P
1dB
P
3dB
Max
Mode of Op-
eration
ƒ
IRL
t
@
50 W*
t
@
f (ns)
50 W*
r (ns)
P
droop (pulse)
(MHz) (dB)
Gain
(dB)
Eff
(%)
P
(W)
Gain
(dB)
Eff
(%)
P
OUT
(W)
OUT
dB @ 50 W
Pulsed RF
Pulsed RF
Pulsed RF
1200
1300
1400
–8
–10
–8
16
16
16
56
57
55
60
14
14
14
58
58
57
78
0.20
0.20
0.15
5
5
5
<2
<2
<2
60
78
54
57
* Note = t and t are defined as D between input and output rise and fall times
r
f
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
= 50 V, I = 50 mA, 30 ms pulse width, 33% duty cycle, class AB test
V
DD
DQ
P
P
3dB
1dB
Mode of Op-
eration
ƒ
P
dB @ 50 W
droop (pulse)
Gain
(dB)
Eff
(%)
P
(W)
Gain
(dB)
Eff
(%)
P
OUT
OUT
(MHz)
(W)
Pulsed RF
Pulsed RF
Pulsed RF
1200
1300
1400
16
16
16
57
56
49
57
14
14
14
59
58
50
75
0.3
55
75
0.3
0.2
50
55
DC Characteristics
Characteristic
Conditions
Symbol
Min
105
—
Typ
—
Max
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
—
1
DS
V
= 50 V, V = 0 V
I
I
—
μA
μA
W
DS
DS
GS
DSS
DSS
V
= 105 V, V = 0 V
—
—
10
—
4.0
1
GS
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V = 0.1 V
R
—
0.4
3.5
—
DS
DS(on)
V
= 50 V, I
= 50 mA
V
GS
3.0
—
V
DS
DQ
V
GS
= 10 V, V = 0 V
I
GSS
μA
DS
Data Sheet
2 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
105
–6 to +12
0 to +55
225
V
GS
V
V
V
DD
Junction Temperature
Storage Temperature Range
T
J
°C
T
STG
–65 to +150
1.37
°C
Thermal Resistance (T
= 70°C, 50 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
PTVA120501EA V1 R0
PTVA120501EA V1 R2
Order Code
Package Description
H-36265-2, bolt-down
H-36265-2, bolt-down
Shipping
PTVA120501EAV1R0XTMA1
PTVA120501EAV1R2XTMA1
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Typical Performance (data taken in a production test fixture)
Small Signal CW Performance
Pulsed CW Performance
Gain & Input Return Loss
VDD = 50 V, IDQ = 50 mA
VDD = 50 V, IDQ = 1.5 A
19
17
15
13
11
9
-1
19
18
17
16
15
14
13
70
60
50
40
30
20
10
Gain
-5
Gain
-9
-13
-17
-21
1400 MHz
1200 MHz
1300 MHz
IRL
Efficiency
38
a120501ea_gcw-1
a120501ea_gcw-2
36
40
42
44
46
48
950
1050 1150 1250 1350 1450 1550
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Typical Performance (cont.)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
19
18
17
16
15
14
60
55
50
45
40
35
30
70
60
50
40
30
20
10
Efficiency
Gain
Output Power
1200 MHz
1300 MHz
1200 MHz
1300 MHz
1400 MHz
1400 MHz
a120501ea_g1-2
a120501ea_g1-1
18
22
26
30
34
38
18
22
26
30
34
38
PIN (dBm)
PIN (dBm)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,
300 µs pulse width, 10% duty cycle
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,
300 µs pulse width, 10% duty cycle
18.0
17.8
17.6
17.4
17.2
58
56
54
52
50
0.25
-5
Gain
0.20
0.15
0.10
0.05
0.00
-10
-15
-20
-25
-30
Power Droop
IRL
Efficiency
a120501ea_g1-4
a120501ea_g1-3
1150 1200 1250 1300 1350 1400 1450
1150 1200 1250 1300 1350 1400 1450
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Typical Performance (cont.)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
16 ms pulse width, 50% duty cycle
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
16 ms pulse width, 50% duty cycle
60
55
50
45
40
35
30
70
60
50
40
30
20
10
19
18
17
16
15
14
Efficiency
Gain
Output Power
1200 MHz
1300 MHz
1400 MHz
1200 MHz
1300 MHz
1400 MHz
a120501ea_g4-1
a120501ea_g4-2
18
22
26
30
34
38
18
22
26
30
34
38
PIN (dBm)
PIN (dBm)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,
16 ms pulse width, 50% duty cycle
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,
16 ms pulse width, 50% duty cycle
0.25
-5
17.4
17.2
17.0
16.8
16.6
60
58
56
54
52
Power Droop
Gain
0.20
0.15
0.10
0.05
0.00
-10
-15
-20
-25
-30
IRL
Efficiency
a120501ea_g4-4
a120501ea_g4-3
1150 1200 1250 1300 1350 1400 1450
1150 1200 1250 1300 1350 1400 1450
Frequency (MHz)
Frequency (MHz)
Data Sheet
5 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Broadband Circuit Impedance
D
S
Z Source
Z Load
G
Z Source W
Z Load W
Freq
[MHz]
R
jX
R
jX
1200
1300
1400
8.07
5.13
5.64
–2.13
–0.95
2.24
3.66
3.90
3.25
4.97
4.56
5.36
Load Pull Performance
Load Pull at Max P
Point – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 50 mA
OUT
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
[dB]
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
[dBm]
1200
3.04 – j2.16
30.68
47.30
53.70
16.62
45.56
3.19 – j1.55
Load Pull at Max G Point – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 50 mA
T
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
[dB]
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
[dBm]
1200
3.04 – j2.16
27.50
46.10
40.74
18.60
57.50
2.88 – j4.11
Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 50 mA
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
[dB]
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
[dBm]
1200
3.04 – j2.16
27.55
46.15
41.21
18.60
57.20
2.88 – j4.06
Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, V
= 50 V, 50 mA
DD
Freq
[MHz]
Zl
[W]
P
P
P
[W]
P
[dB]
PAE Eff
[%]
Z
OUT
[W]
IN
OUT
OUT
G
[dBm]
[dBm]
1200
3.04 – j2.16
28.70
46.57
45.39
17.87
50.46
2.92 – j3.12
Data Sheet
6 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Reference Circuit , 1200 – 1400 MHz
C211
RO3010, .025 (105)
RO3010, .025 (105)
R801
VDD
C206
C215
R804
R803
C803
C801
C802
C103
S3
R802
S2
R202
R101
C213
C209
R102
S1
C207
C210
C102
C106
C204
C208
C101
C214
RF_OUT
RF_IN
C104
C203
C105
C205
C201
VDD
C202
R201
C212
PTVA120501EA_IN_04
PTVA120501EA_OUT_04
a
1 2 0 5 0 1 e a _ C D _ 0 9 - 2 4 - 2 0 1 3
Reference circuit assembly diagram (not to scale)
Data Sheet
7 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTVA120501EA
LTN/PTVA120501EA V1
Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, ε = 6.15, ƒ = 1200 – 1400 MHz
Test Fixture Part No.
PCB
r
Components Information
Component
Input
Description
Suggested Manufacturer
P/N
C101
Capacitor, 39 pF
Capacitor, 1 µF
Capacitor, 33 pF
Capacitor, 2.7 pF
Capacitor, 10 pF
Capacitor, 10 µF
ATC
ATC100B390KW500XB
C4532X7R2A105M230KA
ATC100A330JW150XB
ATC800A2R7BT
ATC800A100JT
C102
TDK Corporation
C103
ATC
C104
ATC
C105
ATC
C106
TDK Corporation
C5750X5R1H106K230KA
ECJ-1VB1H102K
ERJ-8GEYJ102V
ERJ-8GEYJ100V
ERJ-8GEYJ202V
ERJ-3GEYJ122V
ERJ-3GEYJ132V
ERJ-8GEYJ100V
BCP56
C801, C802, C803 Capacitor, 1000 pF
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Infineon Technologies
Texas Instruments
R101
R102
R801
R802
R803
R804
S1
Resistor, 1000 W
Resistor, 10 W
Resistor, 2000 W
Resistor, 1200 W
Resistor, 1300 W
Resistor, 100 W
Transistor
S2
Voltage Regulator
Potentiometer, 2k W
LM78L05ACM
S3
Bourns Inc.
3224W-1-202E
Output
C201, C207
C202, C215
C203, C208
C204, C205
C206, C212
C209
Capacitor, 33 pF
Capacitor, 10 µF
Capacitor, 3.9 pF
Capacitor, 6.8 pF
Capacitor, 1 µF
ATC
ATC100A330JW150XB
C5750X5R1H106K230KA
ATC800A3R9BT
TDK Corporation
ATC
ATC
ATC800A6R8BT
TDK Corporation
C4532X7R2A105M230KA
SEK220M100ST
Capacitor, 22 µF
Capacitor, 100 µF
Capacitor, 6800 µF
Capacitor, 10 µF
Capacitor, 39 pF
Resistor, 5600 W
Cornell Dubilier Electronics (CDE)
Cornell Dubilier Electronics (CDE)
Cornell Dubilier Electronics (CDE)
Cornell Dubilier Electronics (CDE)
ATC
C210
SK101M100ST
C211
ECO-S2AP682EA
SEK100M100ST
C213
C214
ATC100B390KW500XB
ERJ-8RQJ5R6V
R201, R202
Panasonic Electronic Components
Data Sheet
8 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA
Package Outline Specifications
Package H-36265-2
ALL FOUR
CORNERS
6.
45° X 2.03
[.080]
2X 7.11
[.280]
2.66±.51
[.105±.020]
D
S
LID
10.16±.25
[.400±.010]
FLANGE
3.05
15.49±.51
[.610±.020]
C
9.78
L
[.120]
[.385]
G
2X R1.52
[R.060]
C
L
4X R1.52
[R.060]
4X R0.63
15.23
[.600]
[R.025] MAX
SPH 1.57
[.062]
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
h
- 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1
20.31
[.800]
1.02
[.040]
6.
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±±.12ꢀ ꢁ±.±±5ꢂ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source
5. Lead thickness: ±.1± + ±.±51/–±.±25 mm ꢁ±.±±4 + ±.±±2/–±.±±1 inchꢂ.
6. Exposed metal plane on top and bottom of ceramic insulator.
ꢀ. Gold plating thickness: 1.14 ± ±.3ꢃ micron ꢁ45 ± 15 microinchꢂ.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 02.2, 2017-02-07
PTVA120501EA V1
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
All
3
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
Data Sheet reflects released product specification
Updated ordering information
01
2013-05-29
2013-09-24
2016-05-26
2017-02-07
02
Production
Production
Production
02.1
02.2
3
Updated operating voltage and junction temperature
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2017-02-07
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
10 of 10
Rev. 02.2, 2017-02-07
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