IRGS6B60KPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRGS6B60KPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总14页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95644A
IRGB6B60KPbF
IRGS6B60KPbF
IRGSL6B60KPbF
INSULATED GATE BIPOLAR TRANSISTOR
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
• Positive VCE (on) Temperature Coefficient.
G
• Lead-Free.
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-262
TO-220AB
IRGB6B60K
IRGS6B60K
IRGSL6B60K
Absolute Maximum Ratings
Parameter
Max.
600
13
Units
V
A
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
7.0
26
ICM
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
26
VGE
± 20
90
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
36
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
1.4
Units
RθJC
RθCS
RθJA
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
0.50
–––
–––
62
°C/W
–––
40
1.44
–––
g
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1
11/18/04
IRGB/S/SL6B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Collector-to-Emitter Breakdown Voltage 600 ––– –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
Min. Typ. Max. Units
Conditions
V(BR)CES
VCE(on)
VGE(th)
V
VGE = 0V, IC = 500µA
5, 6,7
8,9,10
8,9,10
11
Collector-to-Emitter Saturation Voltage
1.5 1.80 2.20
––– 2.20 2.50
3.5 4.5 5.5
V
V
IC = 5.0A, VGE = 15V
C = 5.0A,VGE = 15V,
VCE = VGE, IC = 250µA
I
TJ = 150°C
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe
Forward Transconductance
––– 3.0 –––
––– 1.0 150
––– 200 500
S
VCE = 50V, IC = 5.0A, PW=80µs
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
17
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 18.2 –––
IC = 5.0A
––– 1.9 –––
––– 9.2 –––
––– 110 210
––– 135 245
––– 245 455
nC VCC = 400V
VGE = 15V
CT1
CT4
CT4
µJ
IC = 5.0A, VCC = 400V
VGE = 15V,RG = 100Ω, L =1.4mH
Ls = 150nH
TJ = 25°C
––– 25
––– 17
34
26
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω L =1.4mH
Ls = 150nH, TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 215 230
––– 13.2 22
––– 150 260
––– 190 300
––– 340 560
ns
µJ
CT4
12,14
WF1WF2
13, 15
CT4
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
IC = 5.0A, VCC = 400V
VGE = 15V,RG = 100Ω, L =1.4mH
Ls = 150nH
TJ = 150°C
––– 28
––– 17
37
26
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω L =1.4mH
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 240 255
––– 18 27
ns
Ls = 150nH, TJ = 150°C
WF1
WF2
Cies
Coes
Cres
Input Capacitance
––– 290 –––
––– 34 –––
––– 10 –––
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
16
4
f = 1.0MHz
TJ = 150°C, IC = 26A, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
FULL SQUARE
10 ––– –––
R
G = 100Ω CT2
VCC = 500V, VGE =+15V to 0V,
CT3
µs
TJ = 150°C, Vp =600V, RG = 100Ω
VCC = 360V, VGE = +15V to 0V
WF3
Note to are on page 13
2
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IRGB/S/SL60B60KPbF
15
10
5
100
90
80
70
60
50
40
30
20
10
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10
1
10 µs
100 µs
1ms
DC
0.1
0
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGB/S/SL6B60KPbF
20
20
18
16
14
12
10
8
18
16
14
12
10
8
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
20
18
16
14
12
10
8
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
4
2
0
0
1
2
3
4
5
6
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
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IRGB/S/SL60B60KPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 3.0A
= 5.0A
= 10A
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
T
T
= 25°C
J
J
= 150°C
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
6
T
= 150°C
4
J
2
T
= 25°C
15
J
0
0
5
10
15
20
0
5
10
20
V
(V)
GE
V
(V)
GE
Fig. 11 - Typ. Transfer Characteristics
Fig. 10 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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IRGB/S/SL6B60KPbF
700
1000
100
10
600
td
OFF
500
400
300
200
100
0
E
ON
t
F
E
td
OFF
ON
R
t
1
0
5
10
(A)
15
20
0
5
10
15
20
I
C
I
(A)
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
250
200
150
100
50
1000
100
10
td
OFF
E
OFF
td
E
ON
ON
t
R
t
F
1
0
0
50
100
(
150
200
0
50
100
(
150
200
R
)
R
)
Ω
Ω
G
G
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
6
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IRGB/S/SL60B60KPbF
16
1000
100
10
14
Cies
300V
12
400V
10
8
Coes
Cres
6
4
2
0
1
0
5
10
15
20
1
10
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 17 - Typical Gate Charge vs. VGE
Fig. 16- Typ. Capacitance vs. VCE
ICE = 5.0A; L = 600µH
VGE= 0V; f = 1MHz
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.708
0.447
0.219
0.00022
0.00089
0.01037
0.1
τ
1τ1
τ
2 τ2
3τ3
0.01
0.02
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRGB/S/SL6B60KPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRGB/S/SL60B60KPbF
450
400
350
300
250
200
150
100
50
9
8
7
6
5
4
3
2
1
0
-1
500
400
300
200
100
0
25
20
15
10
5
90% ICE
TEST CURRENT
90% test current
tf
5% VCE
5% ICE
10% test current
5% VCE
tr
0
0
Eon Loss
Eoff Loss
-50
-100
-5
-0.20
0.30
time(µs)
0.80
16.00
16.10
16.20
16.30
16.40
time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
500
400
300
200
100
0
50
40
VCE
ICE
30
20
10
0
-5.00
0.00
5.00
time (µS)
10.00
15.00
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
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9
IRGB/S/SL6B60KPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT C ODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTE RNAT IONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
10
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IRGB/S/SL60B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
ASS EMBLED ON WW 02, 2000
IN THE ASS EMBLY LINE "L"
RECTIFIER
LOGO
F530S
DAT E CODE
YEAR 0 = 2000
WEE K 02
Note : "P" in a s s em bly line
pos ition indic a tes "Le a d-Fre e"
AS S E MB L Y
LOT CODE
LINE L
OR
PART NUMBER
INT ERNATIONAL
RECT IFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
ASSEMBLY
LOT CODE
WEEK 02
A = ASSEMBLYSITE CODE
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11
IRGB/S/SL6B60KPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMP LE: THIS IS AN IRL3103L
LO T CO DE 1789
PART NUMBER
INT ERNAT IO NAL
RECTIFIER
LO G O
AS SEMBLED O N WW 19, 1997
IN THE AS S EMBLY LINE "C"
DATE CO DE
YEAR 7 = 1997
WEEK 19
No te : "P " in a s se m b ly line
p o s itio n ind ic a te s "L e a d -F re e "
AS S EMBLY
LO T CODE
LINE C
OR
P ART NUMBER
INT ERNAT IO NAL
RECTIFIER
LOG O
DATE CO DE
P = DE S IGNAT E S L E AD-F R E E
P RO DUCT (O PTIO NAL)
YEAR 7 = 1997
AS S EMBLY
LO T C ODE
WEEK 19
A = AS S EMBLY SITE CO DE
12
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IRGB/S/SL60B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
3.90 (.153)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC= 80% (VCES), VGE =15V, L = 28µH, RG = 22Ω
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
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13
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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