IRGP4263-EPBF [INFINEON]
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel,;
| 型号： | IRGP4263-EPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel, 栅 |
| 文件： | 总11页 (文件大小：916K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4263PbF
IRGP4263-EPbF
Insulated Gate Bipolar Transistor
VCES = 650V
IC = 60A, TC =100°C
E
E
C
tSC 5.5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 48A
C
G
G
V
IRGP4263PbF
TO247AC
IRGP4263-EPbF
TO-247AD
Applications
• Industrial Motor Drive
• Inverters
G
Gate
C
E
Collector
Emitter
• UPS
• Welding
Features
Low VCE(ON) and switching losses
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5µs short circuit SOA
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Lead-free, RoHS compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7P4263PbF
IRG7P4263-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4263PbF
IRGP4263-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
650
90
V
IC @ TC = 25°C
IC @ TC = 100°C
60
A
ICM
192
ILM
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
192
VGE
±20
V
PD @ TC = 25°C
300
W
PD @ TC = 100°C
Maximum Power Dissipation
150
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.5
–––
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RCS
RJA
°C/W
1
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IRGP4263PbF/IRGP4263-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
650
—
Typ.
—
Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
—
—
V
VGE = 0V, IC = 100µA
505
mV/°C VGE = 0V, IC = 1mA (25°C-175°C)
V(BR)CES/
—
—
5.5
—
—
—
—
—
1.7
2.1
—
2.1
—
V
IC = 48A, VGE = 15V, TJ = 25°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
7.7
—
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
-23
31
mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)
CE = 50V, IC = 48A, PW = 20µs
µA VGE = 0V, VCE = 650V
VGE(th)/TJ
gfe
—
S
V
1.0
700
—
25
ICES
IGES
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
—
VGE = 0V, VCE = 650V, TJ = 175°C
±100
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Min.
—
Typ. Max Units
Conditions
Qg
100
30
150
50
IC = 48A
VGE = 15V
Qge
—
nC
mJ
VCC = 600V
Qgc
Eon
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
—
—
40
1.7
1.0
2.7
70
60
2.6
1.9
4.5
90
Eoff
IC = 48A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
Etotal
td(on)
Turn-On delay time
—
—
—
—
—
—
tr
Rise time
60
140
30
80
160
50
ns
mJ
ns
pF
td(off)
tf
Turn-Off delay time
Fall time
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
2.9
1.4
4.3
55
—
—
IC = 48A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
—
—
—
—
—
—
—
—
—
—
—
—
—
—
60
td(off)
tf
Turn-Off delay time
Fall time
145
65
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3000
150
80
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 192A
FULL SQUARE
VCC = 520V, Vp ≤ 650V
RBSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Rg = 10, VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
Rg = 10, VGE = +15V to 0V
SCSOA
5.5
—
—
µs
Notes:
VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 10.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRGP4263PbF/IRGP4263-EPbF
110
90
70
50
30
10
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 150W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
80
60
40
20
0
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
(°C)
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY V
(on)
CE
100
10
1msec
100µsec
10msec
1
0.1
0.01
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
(V)
1000
1
10
100
1000
V
V
, Collector-to-Emitter Voltage (V)
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ 175°C, VGE =15V
Fig. 5- Reverse Bias SOA
TJ = 175°C; VGE = 20V
3
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IRGP4263PbF/IRGP4263-EPbF
200
180
160
140
120
100
80
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
180
160
140
120
100
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
TJ = -40°C; tp = 20µs
200
180
160
140
120
100
80
8
6
4
2
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
8
10
12
14
16
18
20
V
(V)
GE
V
(V)
CE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 175°C; tp = 20µs
8
6
4
2
0
8
6
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
4
2
0
8
10
12
14
16
18
20
8
10
12
14
16
18
20
V
(V)
GE
V
(V)
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
TJ = 25°C
4
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IRGP4263PbF/IRGP4263-EPbF
10
200
180
160
140
120
100
80
9
T
T
= 25°C
J
J
8
= 175°C
7
E
ON
6
5
4
3
60
2
40
E
OFF
1
0
20
0
0
10 20 30 40 50 60 70 80 90 100110
(A)
4
6
8
10 12 14 16 18 20
Gate-to-Emitter Voltage(V)
V
GE,
I
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 12 - Typ. Transfer Characteristics
TJ = 175°C; L = 0.210mH; VCE = 400V, RG = 10; VGE = 15V
VCE = 50V; tp = 20µs
1000
100
10
8
7
6
E
ON
td
5
4
3
OFF
t
F
td
ON
E
OFF
2
1
0
t
R
0
10 20 30 40 50 60 70 80 90 100
0
20
40
60
()
80
100
120
I
(A)
C
R
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 0.210mH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 0.210mH; VCE = 400V, RG = 10; VGE = 15V
10000
280
240
200
160
120
80
35
30
25
20
15
10
5
T
sc
1000
td
OFF
td
ON
I
sc
t
R
100
10
1
t
F
40
0
20
40
60
()
80
100
8
10
12
14
(V)
16
18
R
V
G
GE
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 0.210mH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 17 - VCE vs. Short Circuit Time
Vcc= 400V; TC= 150°C
5
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IRGP4263PbF/IRGP4263-EPbF
16
10000
1000
100
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
4
Cres
2
0
10
0
20
Q
40
60
80
100
0
100
200
V
300
(V)
400
500
, Total Gate Charge (nC)
G
CE
Fig. 19 - Typical Gate Charge vs. VGE
CE = 48A
Fig. 18 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
Ri(°C/W)
i (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.0839
0.0626
0.2091
0.1450
0.00012
0.00012
0.00425
0.02510
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
Fig. 20 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
6
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IRGP4263PbF/IRGP4263-EPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
BVCES Filter
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
Submit Datasheet Feedback August 21, 2014
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IRGP4263PbF/IRGP4263-EPbF
600
500
400
300
200
100
0
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
tr
tf
TEST
CURRENT
90% ICE
90% ICE
5% VCE
5% ICE
10% ICE
5% VCE
Eoff Loss
Eon Loss
-100
-10
-100
-10
-2
0
2
4
6
-3 -2 -1
0
1
2
3
4
5
6
7
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
500
VCE
400
300
200
100
0
400
300
200
100
0
ICE
-100
-100
-2
0
2
4
6
8
Time (uS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRGP4263PbF/IRGP4263-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
135H
57
RECTIFIER
LOGO
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
9
August 21, 2014
IRGP4263PbF/IRGP4263-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
August 21, 2014
IRGP4263PbF/IRGP4263-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
Moisture Sensitivity Level
RoHS Compliant
N/A
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
Updated package outline on page9
8/21/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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