IRGP4266PBF [INFINEON]
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel;
| 型号： | IRGP4266PBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel 栅 |
| 文件： | 总11页 (文件大小：877K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4266PbF
IRGP4266-EPbF
Insulated Gate Bipolar Transistor
VCES = 650V
C
G
G
IC = 90A, TC =100°C
E
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 75A
E
C
G
G
C
G
E
IRGP4266PbF
IRGP4266-EPbF
TO-247AD
n-channel
TO-247AC
Applications
Industrial Motor Drive
Inverters
G
Gate
C
E
Collector
Emitter
UPS
Welding
Features
Benefits
High efficiency in a wide range of applications and
switching frequencies
Low VCE(ON) and switching Losses
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5.5µs short circuit SOA
Lead-Free, RoHS compliant
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4266PbF
IRGP4266-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4266PbF
IRGP4266-EPbF
Absolute Maximum Ratings
Parameter
Max.
650
140
90
300
300
±20
450
230
Units
V
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
PD @ TC = 25°C
PD @ TC = 100°C
W
Maximum Power Dissipation
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.33
–––
Units
RJC
RCS
RJA
°C/W
–––
1
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
650
—
Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
—
570
1.7
2.1
—
—
—
V
VGE = 0V, IC = 100µA
mV/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
V(BR)CES/TJ
—
2.1
—
V
IC = 75A, VGE = 15V, TJ = 25°C
IC = 75A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 2.1mA
VCE(on)
Collector-to-Emitter Saturation Voltage
—
VGE(th)
Gate Threshold Voltage
5.5
—
7.7
—
V
Threshold Voltage temp. coefficient
Forward Transconductance
-22
43
mV/°C VCE=VGE, IC = 2.1mA (25°C - 175°C)
VGE(th)/TJ
gfe
—
—
S
VCE = 50V, IC = 75A, PW = 20µs
VGE = 0V, VCE = 650V
—
1.0
1.1
—
25
µA
ICES
IGES
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
—
—
mA VGE = 0V, VCE = 650V, TJ = 175°C
nA VGE = ±20V
—
±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min.
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
Qg
140
40
210
60
IC = 75A
VGE = 15V
VCC = 400V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
nC
mJ
ns
60
90
3.2
1.7
4.9
80
4.2
2.6
6.8
95
IC = 75A, VCC = 400V, VGE = 15V
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
Rise time
85
105
220
55
td(off)
tf
Turn-Off delay time
200
40
Fall time
Eon
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
—
—
—
4.6
2.4
7.0
—
—
—
IC = 75A, VCC = 400V, VGE=15V
RG=10, L=200µH,TJ = 175°C
Energy losses include tail & diode
reverse recovery
Eoff
Etotal
mJ
ns
td(on)
tr
td(off)
tf
Turn-On delay time
Rise time
—
—
—
—
—
—
—
60
95
—
—
—
—
—
—
—
Turn-Off delay time
Fall time
205
60
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4300
230
120
VGE = 0V
VCC = 30V
f = 1.0Mhz
pF
µs
TJ = 175°C, IC = 300A
VCC = 520V, Vp ≤ 650V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
5.5
Rg = 50, VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤600V
—
—
Rg = 50, VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 50.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
140
120
100
80
For both:
Dutycycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 245W
Square Wave:
VCC
60
I
Diode as specified
40
20
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current= IRMS of fundamental)
140
120
100
80
500
400
300
200
100
0
60
40
20
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
C
T
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY V (on)
CE
1msec
100µsec
10msec
1
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
10
100
1000
1
10
100
1000
V
(V)
CE
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 5 - Reverse Bias SOA
Fig. 4 - Forward SOA
TJ = 175°C; VGE = 20V
3
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
300
250
200
150
100
50
300
250
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
CE
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
10
8
300
250
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
I
= 38A
= 75A
= 150A
CE
6
I
CE
I
CE
4
2
0
0
6
8
10
12
V
14
16
18
20
0
2
4
6
8
10
(V)
V
(V)
GE
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
TJ = 175°C; tp = 20µs
10
8
10
8
I
= 38A
= 75A
= 150A
I
= 38A
= 75A
= 150A
6
6
4
2
0
CE
CE
I
I
CE
CE
I
I
CE
CE
4
2
0
6
8
10
12
V
14
16
18
20
8
10
12
14
16
18
20
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
4
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
18000
16000
14000
12000
10000
8000
300
250
200
150
100
50
T = 25°C
J
E
T = 175°C
ON
J
6000
E
OFF
4000
2000
0
0
20
40
60
80 100 120 140 160
(A)
4
6
8
10
12
14
16
I
V
Gate-to-Emitter Voltage (V)
C
GE,
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 12 - Typ. Transfer Characteristics
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
VCE = 50V; tp = 20µs
12000
1000
td
OFF
8000
E
ON
100
E
OFF
td
t
ON
4000
F
t
R
0
10
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
(A)
R
( )
I
G
C
Fig. 14 - Typ. Switching Time vs. IC
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
10000
20
15
10
5
400
300
200
100
0
I
sc
T
sc
1000
td
OFF
t
R
t
F
100
td
ON
10
0
0
20
40
60
80
100
8
10
12
(V)
14
16
R
( )
V
G
GE
Fig. 16 - Typ. Switching Time vs. RG
Fig. 17 - VGE vs. Short Circuit Time
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
VCC = 400V; TC = 150°C
5
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
10000
1000
100
16
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
Coes
Cres
6
4
2
10
0
0
100
200
V
300
(V)
400
500
0
20 40 60 80 100 120 140 160
, Total Gate Charge (nC)
Q
CE
G
Fig. 18 - Typ. Capacitance vs. VCE
Fig. 19 - Typical Gate Charge vs. VGE
1
D = 0.50
0.1
0.20
Ri (°C/W)
0.00738
0.09441
i (sec)
0.000009
0.000179
0.10
0.05
R1
R1
R2
R3
R3
R4
R4
R2
J J
CC
0.01
0.001
0.02
0.01
1 1
2 2
3 3
4 4
0.13424
0.09294
0.002834
0.0182
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
6
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
L
L
VCC
DUT
80 V
+
-
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
Resistive Load
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
7
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
600
500
400
300
200
100
0
120
600
500
400
300
200
100
0
120
100
80
60
40
20
0
100
TEST CURRENT
tf
tr
80
90% ICE
60
90% test current
40
10% test current
20
5% VCE
5% VCE
5% ICE
0
Eon Loss
Eoff Loss
-100
-20
-0.35
-100
-20
-1.25
-0.55
-0.5
-0.45
-0.4
-1.4
-1.35
time(µs)
-1.3
time (µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
450
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
VCE
ICE
0
0
-50
-50
-10 -8 -6 -4 -2
0
2
4
6
8
Time (uS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
E
A
A
"A"
E2/2
A2
Q
E2
2X
D
B
L1
"A"
L
SEE
VIEW"B"
2x b2
3x b
Ø.010 B A
c
b4
A1
e
2x
LEADTIP
ØP
Ø.010 B A
-A-
S
D1
VIEW:"B"
THERMALPAD
PLATING
BASEMETAL
E1
(c)
Ø.010 B A
VIEW:"A"-"A"
(b,b2,b4)
SECTION:C-C,D-D,E-E
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
135H
57
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2012 International Rectifier
December 13, 2012
IRGP4266PbF/IRGP4266-EPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245,USA
Visit us at www.irf.com for sales contact information.
11
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© 2012 International Rectifier
December 13, 2012
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