IRGP440UD2 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 500V ， VGE @ = 15V ， IC = 22A ）
| 型号： | IRGP440UD2 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A) |
| 文件： | 总8页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1064
IRGP440UD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
C
VCES = 500V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
V
CE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 22A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
O-247AC
T
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
500
V
IC @ TC = 25°C
40
IC @ TC = 100°C
22
ICM
80
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
80
IF @ TC = 100°C
IFM
15
80
VGE
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
0.77
1.7
—
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
—
°C/W
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 1
C-641
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IRGP440UD2
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
500
—
—
0.35
2.4
2.8
2.4
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
V/°C VGE = 0V, IC = 1.0mA
IC = 22A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
3.0
—
VGE = 15V
—
V
IC = 40A
See Fig. 2, 5
—
—
IC = 22A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-11
13
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.6
—
—
S
VCE = 100V, IC = 22A
VGE = 0V, VCE = 500V
ICES
Zero Gate Voltage Collector Current
—
250
3500
1.7
1.6
µA
—
—
VGE = 0V, VCE = 500V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
—
1.3
1.2
—
V
IC = 15A
See Fig. 13
—
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
55
11
19
80
68
83
17
29
—
—
IC = 22A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
IC = 22A, VCC = 400V
td(off)
tf
Turn-Off Delay Time
Fall Time
160 240
130 220
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.81
0.82
1.6
78
—
—
2.4
—
—
—
—
—
—
—
—
—
60
mJ
ns
TJ = 150°C,
See Fig. 9, 10, 11, 18
64
IC = 22A, VCC = 400V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
td(off)
tf
Turn-Off Delay Time
Fall Time
290
250
2.6
13
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
Cies
Coes
Cres
trr
1400
250
42
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
42
TJ = 25°C See Fig.
74 120
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
4.0
6.5
6.0
10
V R = 200V
Qrr
80 180
220 600
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
Notes:
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-642
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IRGP440UD2
25
20
15
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
Ga te drive as specified
Tu rn-on losses include
effects of reverse recovery
Power Dissipation = 35W
60 % of ra ted
volta ge
10
5
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
100
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
10
10
V
= 15V
V
= 100V
C C
G E
20µs P ULSE W IDTH
5µs PULSE W IDTH
1
1
1
10
5
10
15 20
V
, G ate-to-E m itter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-643
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IRGP440UD2
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
V
= 15V
V
= 15V
G E
G E
80µs PULSE W IDTH
I
= 44A
C
I
= 22A
= 11A
C
C
I
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
, Case Temperature (°C)
T
C
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-644
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IRGP440UD2
20
16
12
8
250 0
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 22A
CE
C
GE
ies
= C + C
,
C
ce
SHORTED
ge
gc
= C
res
oes
gc
= C + C
ce
gc
200 0
150 0
100 0
500
0
C
ies
C
oes
4
C
res
0
0
20
40
60
1
1 0
100
Q
G
, Total G ate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.78
10
VCC = 400V
1.76 VGE = 15V
TC = 25°C
IC = 44A
1.74
IC = 22A
1.72
1.70
1.68
1.66
1.64
1.62
1.60
1.58
1.56
IC = 22A
IC = 11A
1
Ω
RG = 10
VGE = 15V
VCC = 400V
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Case Temperature (°C)
Ω
R , Gate Resistance ( )
C
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-645
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IRGP440UD2
8.0
1 000
100
10
RG = 10Ω
TC = 150°C
VCC = 400V
V
T
= 20V
= 125°C
G E
J
VGE = 15V
6.0
SA FE O PERATING AREA
4.0
2.0
0.0
A
1
0
10
20
30
40
50
1
1 0
1 00
1000
I , Collector-to-Emitter Current (A)
V
, Collector-to-Em itter Voltage (V)
C E
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-646
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IRGP440UD2
100
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
40
20
I
= 15A
F
I
= 5.0A
F
I
= 5.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
800
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-647
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IRGP440UD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
430µF
80%
Ic
Ic
of Vce
D.U.T.
5% Ic
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
Refer to Section D for the following:
Appendix B: Section D - page D-4
Fig. 18e - Clamped Inductive Load Test Circuit
Fig. 19 - Pulsed Collector Current Test Circuit
Fig. 20 - Switching Loss Test Circuit
Package Outline 3 - JEDEC Outline TO-247AC
Section D - page D-13
C-648
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相关型号：
IRGP450UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V, Ic=33A)
INFINEON
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