IRGP440U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A); 绝缘栅双极晶体管（ VCES = 500V ， VGE @ = 15V ， IC = 22A ）
| 型号： | IRGP440U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A) |
| 文件： | 总6页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Previous Datasheet
Index
Next Data Sheet
PD - 9.779A
IRGP440U
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 500V
V
CE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 22A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
500
V
IC @ TC = 25°C
40
IC @ TC = 100°C
22
A
ICM
80
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
80
±20
VGE
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
PD @ TC = 25°C
160
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
0.77
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 0
C-605
To Order
Previous Datasheet
Index
Next Data Sheet
IRGP440U
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
500
20
—
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.35
V/°C VGE = 0V, IC = 1.0mA
IC = 22A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.4 3.0
VGE = 15V
—
2.8
2.4
—
—
—
V
IC = 40A
See Fig. 2, 5
—
IC = 22A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
13
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.6
—
—
S
VCE = 100V, IC = 22A
VGE = 0V, VCE = 500V
ICES
Zero Gate Voltage Collector Current
250
1000
µA
—
—
VGE = 0V, VCE = 500V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
55
11
19
27
13
83
17
29
—
—
IC = 22A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
IC = 22A, VCC = 400V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
100 150
56 100
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.37
0.18
—
—
mJ
ns
See Fig. 9, 10, 11, 14
0.55 0.70
td(on)
tr
td(off)
tf
27
15
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 22A, VCC = 400V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
137
100
0.96
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
1400
250
42
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 10Ω, ( See fig. 13a )
C-606
To Order
Previous Datasheet
Index
Next Data Sheet
IRGP440U
60
50
F or both:
Tria n gu la r w ave :
D u ty cy cle : 5 0 %
T
T
=
1 2 5 °C
9 0 °C
J
=
sin k
G a te d riv e a s sp e cifie d
P ow e r D is sipa tion 35 W
C la m p vo ltag e:
8 0% of ra ted
=
40
S q u are w av e:
30
60% o f rated
voltag e
20
10
0
Ideal diodes
0.1
1
10
100
f, F reque ncy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
1000
100
10
1000
100
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
10
V
= 100V
V
= 15V
C C
G E
20µs P ULSE W IDTH
5µs PULSE W IDTH
1
1
5
10
15 20
1
10
V
, G ate-to-E m itter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-607
To Order
Previous Datasheet
Index
Next Data Sheet
IRGP440U
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
V
= 15V
V
= 15V
G E
G E
80µs PULSE W IDTH
I
= 44A
C
I
= 22A
= 11A
C
C
I
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
, Case Temperature (°C)
T
C
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-608
To Order
Previous Datasheet
Index
Next Data Sheet
IRGP440U
250 0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GE
ies
res
oes
V
I
= 400V
= 22A
CE
C
= C + C
,
C
ce
SHORTED
ge
gc
gc
= C
= C + C
ce
gc
200 0
150 0
100 0
500
0
C
ies
C
oes
4
C
res
0
1
1 0
100
0
20
40
60
VCE , Collector-to-Emitter Voltage (V)
Q
G
, Total G ate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.9
0.8
0.7
0.6
0.5
R
V
V
= 10 Ω
= 15V
= 400V
V
V
T
I
= 400V
= 15V
= 25°C
= 22A
G
GE
CC
C C
G E
C
C
I
= 44A
C
I
= 22A
= 11A
C
C
1
I
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
20
40
60
T , Case Temperature (°C)
R
, G ate R esistance (
)
Ω
C
G
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-609
To Order
Previous Datasheet
Index
Next Data Sheet
IRGP440U
3.0
1 000
100
10
Ω
= 10
R
T
V
V
V
T
= 20V
= 125°C
G
G E
J
= 150°C
= 400V
= 15V
C
C C
G E
2.0
1.0
0.0
SA FE O PERATING AREA
1
0
1 0
20
30
40
50
1
1 0
1 00
1000
V
, Collector-to-Em itter Voltage (V)
I
, C ollecto r-to-E m itter C urrent (A )
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix A: Section D - page D-3
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC
Section D - page D-13
C-610
To Order
相关型号：
IRGP440UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A)
INFINEON
IRGP450UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V, Ic=33A)
INFINEON
©2020 ICPDF网 联系我们和版权申明