IRG4BC20SDS [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.4V ， @ VGE = 15V ， IC = 10A）
| 型号： | IRG4BC20SDS |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
| 文件： | 总10页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91794
IRG4BC20SD-S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 10A
G
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
E
n-channel
• Industry standard D2Pak package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D 2 Pak
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
I
19
IC @ TC = 100°C
10
ICM
38
A
ILM
38
IF @ TC = 100°C
7.0
IFM
38
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
60
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Thermal Resistance
Parameter
Typ.
–––
Max.
2.1
Units
°C/W
RqJC
RqJC
RqJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient ( PCB Mounted,steady-state)*
Weight
–––
3.5
–––
80
1.44
–––
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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1
IRG4BC20SD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ
600
—
—
—
—
V
VGE = 0V, IC = 250µA
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage
0.75
V/°C VGE = 0V, IC = 1.0mA
IC = 10A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.40 1.6
VGE = 15V
—
1.85
1.44
—
—
—
V
I
C = 19A
See Fig. 2, 5
—
IC = 10A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.0 5.8
—
S
VCE = 100V, IC = 10A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
1700
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.4 1.7
1.3 1.6
V
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
27
40
IC = 10A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
4.3 6.5
See Fig. 8
10
62
32
15
—
—
TJ = 25°C
ns
IC = 10A, VCC = 480V
VGE = 15V, RG = 50W
td(off)
tf
Turn-Off Delay Time
Fall Time
690 1040
480 730
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.32
2.58
—
—
mJ See Fig. 9, 10, 11,18
2.90 4.5
td(on)
tr
td(off)
tf
64
35
—
—
—
—
—
—
—
—
—
55
90
TJ = 150°C, See Fig. 10,11, 18
ns
IC = 10A, VCC = 480V
Turn-Off Delay Time
Fall Time
980
800
4.33
7.5
550
39
VGE = 15V, RG = 50W
Energy losses include "tail" and
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
7.1
37
ƒ = 1.0MHz
TJ = 25°C See Fig.
55
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
3.5 5.0
4.5 8.0
65 138
124 360
VR = 200V
Qrr
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
240
210
—
—
2
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IRG4BC20SD-S
3.0
2.0
1.0
0.0
For both:
Duty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
G ate drive as specified
Power Dissipation =
W
1.7
S q uare wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T = 150o C
J
10
10
°
T = 150 C
J
T = 25oC
J
°
T = 25 C
J
V
= 50V
V
= 15V
CC
5µs PULSE WIDTH
GE
20µs PULSE WIDTH
1
1
0.0
5
6
7
8
9
10 11 12
1.0
2.0
3.0 4.0
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC20SD-S
20
15
10
5
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 20 A
C
I
I
= 10 A
C
C
=
5.0 A
0
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =t / t
1
2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20SD-S
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
I
= 400V
= 10A
CC
C
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
gc
oes
ce
C
ies
C
C
oes
4
res
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
3.0
2.9
2.8
2.7
50W
=
= 15V
= 480V
V
V
= 480V
R
CC
GE
G
= 15V
V
GE
°
T
= 25
C
V
CC
J
C
I
= 10A
I
I
I
=
=
=
A
A
20
10
C
C
C
10
5 A
1
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C )
RG, Gate Resistance (W)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
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Junction Temperature
5
IRG4BC20SD-S
14
100
10
1
R
T
V
=
50W
G
J
CC
V
T
= 20V
GE
J
°
= 150 C
= 480V
= 15V
= 125 oC
12
10
8
V
GE
6
4
2
SAFE OPERATING AREA
10
0
0
4
8
12
16
20
1
100
1000
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
10
T
= 150°C
= 125°C
J
T
J
T
=
25°C
J
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20SD-S
100
80
60
40
20
0
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20SD-S
Same type
device as
D.U.T.
430µF
80%
90%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
C
Fig. 18a - Test Circuit for Measurement of
t
f
t
r
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
ts
on
off
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VO LTAG E D.U.T.
Q rr =
Ic dt
Ic
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VO LTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
W AVEFORMS
5% Vce
tr
td(on)
t2
Eon =
t4
Vce Ic dt
Erec =
t1
Vd Ic dt
t3
DIO DE REVERSE
RECOVERY ENERG Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20SD-S
Vg
GATE SIG NAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
2 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4BC20SD-S
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50W (figure 19)
Pulse width £80µs; duty factor £0.1%.
Pulse width 5.0µs, single shot.
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
M AX.
- A -
2
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LE AD ASSIGNM ENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENS IONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
DIM ENS IONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
3 - SOURCE
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
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Data and specifications subject to change without notice. 9/98
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10
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