IRG4BC15UD-LPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD; 超快软恢复DIOD绝缘栅双极晶体管
| 型号： | IRG4BC15UD-LPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD |
| 文件： | 总12页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95781
IRG4BC15UD-SPbF
IRG4BC15UD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
C
Features
VCES = 600V
UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
G
• Industry standard D2Pak & TO-262 packages
• Lead-Free
E
n-channel
Benefits
Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
D2Pak
IRG4BC15UD-S
TO-262
IRG4BC15UD-L
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
7.8
ICM
42
A
ILM
42
IF @ TC = 100°C
4.0
IFM
16
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
49
W
°C
PD @ TC = 100°C Maximum Power Dissipation
19
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.7
Units
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case - Diode
–––
7.0
°C/W
Case-to-Sink, flat, greased surface
0.50
–––
–––
80
Junction-to-Ambient, typical socket mount ꢀ
Junction-to-Ambient (PCB Mount, steady state)
–––
40
Weight
2 (0.07)
–––
g (oz)
www.irf.com
1
08/27/04
IRG4BC15UD-S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 2.02 2.4
––– 2.56 –––
IC = 7.8A
VGE = 15V
V
IC = 14A
––– 2.21 –––
IC = 7.8A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
4.1 6.2 –––
––– ––– 250
––– ––– 1400
––– 1.5 1.8
––– 1.4 1.7
S
VCE = 100V, IC = 7.8A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 4.0A
VFM
IGES
Diode Forward Voltage Drop
V
IC = 4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– 23
––– 4.0 6.0
––– 9.6 14
35
IC = 7.8A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
––– 17 –––
––– 20 –––
––– 160 240
––– 83 120
––– 0.24 –––
––– 0.26 –––
––– 0.50 0.63
––– 16 –––
––– 21 –––
––– 180 –––
––– 220 –––
––– 0.76 –––
––– 7.5 –––
––– 410 –––
––– 37 –––
––– 5.3 –––
TJ = 25°C
ns
IC = 7.8A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
diode reverse recovery.
mJ
ns
TJ = 150°C,
IC = 7.8A, VCC = 480V
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
td(off)
tf
Turn-Off Delay Time
Fall Time
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
ƒ = 1.0MHz
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
––– 28
––– 38
42
57
IF = 4.0A
Irr
Diode Peak Reverse Recovery Current ––– 2.9 5.2
––– 3.7 6.7
VR = 200V
di/dt 200A/µs
Qrr
Diode Reverse Recovery Charge
––– 40
60
nC TJ = 25°C
TJ = 125°C
––– 70 110
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
––– 280 ––– A/µs TJ = 25°C
––– 240 ––– TJ = 125°C
IRG4BC15UD-S/LPbF
12.00
10.00
8.00
6.00
4.00
2.00
0.00
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60%of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
°
T = 150 C
J
10
°
T = 150 C
J
1
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
GE
V
= 50V
CC
5µs PULSE WIDTH
20µs PULSE WIDTH
0.1
0.1
0.1
5.0
1
10
10.0
15.0 20.0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRG4BC15UD-S/LPbF
14
12
10
8
4.0
3.0
2.0
1.0
V
= 15V
GE
80µs PULSE WIDTH
I
= 14A
C
I
I
= 7.8A
= 3.9A
C
6
4
C
2
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140
°
T , Case Temperature ( C)
C
T
J
, Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC15UD-S/LPbF
800
600
400
200
0
20
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
I
= 400V
= 7.8A
CC
C
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
16
12
8
C
ies
C
C
oes
4
res
0
0
5
10
15
20
25
1
10
100
Q , Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.48
0.46
0.44
0.42
10
V
V
= 480V
= 15V
CC
GE
Ω
= 75
R
G
V
V
= 15V
GE
CC
T = 25°C
= 480V
J
I
= 7.8A
C
I
= 14A
C
1
I
= 7.8A
= 3.9A
C
I
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
R
, Gate Resistance (
)
Ω
T , Junction Temperature (°C)
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
IRG4BC15UD-S/LPbF
100
10
1
V
= 20V
2.0
GE
Ω
= 75
TJ = 150°C
R
T = 125°
G
J
V
= 15V
GE
CC
1.6
1.2
0.8
0.4
0.0
V
= 480V
SAFE OPERATING AREA
1
10
100
1000
2
4
6
8
10
12
14
16
V
, Drain-to-Source Voltage (V)
DS
I , Collector Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
T = 150°C
J
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRG4BC15UD-S/LPbF
50
45
40
35
30
25
20
14
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
12
I
F
I
I
= 8.0A
= 4.0A
F
F
10
8
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
IRG4BC15UD-S/LPbF
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
VceIcdt
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
Eon =
t4
∫
Erec = V
Vd Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
IRG4BC15UD-S/LPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
IRG4BC15UD-S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in assembly line
pos ition indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEE K 02
A = AS S E MB L Y S IT E CODE
IRG4BC15UD-S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECT IFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DAT E CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECT IFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A = ASSEMBLYSITE CODE
IRG4BC15UD-S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
This applies to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Repetitive rating: VGE=20V; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ꢀThis only applies to TO-262 package.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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