IRG4BC20FD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.66V ， @ VGE = 15V ， IC = 9.0A ）
| 型号： | IRG4BC20FD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) |
| 文件： | 总10页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91601A
IRG4BC20FD
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
• Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3
E
• IGBT co-packaged with HEXFREDTM ultrafast,
n-channel
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
TO-220AB
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
16
IC @ TC = 100°C
9.0
ICM
64
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
64
IF @ TC = 100°C
7.0
IFM
32
VGE
20
60
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ TC = 100°C
24
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.1
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
–––
3.5
°C/W
0.50
–––
80
–––
2 (0.07)
–––
g (oz)
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1
7/11/2000
IRG4BC20FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
—
—
—
V
VGE = 0V, IC = 250µA
—
—
—
—
3.0
—
0.72
V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
1.66 2.0
IC = 9.0A
VGE = 15V
2.06
1.76
—
—
—
V
IC = 16A
See Fig. 2, 5
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.9 5.1
—
S
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
1700
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.4 1.7
1.3 1.6
V
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
100 nA
VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
27 40
4.2 6.2
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 9.0A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
9.9
43
20
15
—
—
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
td(off)
tf
Turn-Off Delay Time
FallTime
240 360
150 220
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.25
0.64
—
—
mJ
ns
E
ts
0.89 1.3
td(on)
tr
td(off)
tf
41
22
—
—
—
—
—
—
—
—
—
55
90
TJ = 150°C, See Fig. 11, 18
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
Turn-Off Delay Time
FallTime
320
290
1.35
7.5
540
37
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
7.0
37
ƒ = 1.0MHz
TJ = 25°C See Fig.
55
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
3.5 5.0
4.5 8.0
65 138
124 360
VR = 200V
Qrr
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
240
210
—
—
2
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IRG4BC20FD
14
12
10
8
For both:
Duty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
G ate drive as specified
Power Dissipation = 13
W
Squa re wave:
60% of rated
voltage
6
I
4
Ideal diodes
2
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T = 25oC
J
T = 150oC
T = 150oC
J
J
10
10
T = 25 oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
1
1
10
5
6
7
8
9
10 11 12 13
14
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4BC20FD
16
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 18 A
C
12
8
9.0 A
= 9 A
I
I
C
C
4
= 4.5 A
0
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4BC20FD
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
CC
I
C
= 400V
= 9.0A
C
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
4
oes
res
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.90
0.88
0.86
0.84
0.82
0.80
0.78
10
Ω
V
V
= 480V
R
= 50Ohm
= 15V
CC
GE
G
= 15V
= 25
V
GE
°
T
C
V
= 480V
J
C
CC
I
= 9.0A
I
=
=
A
18
C
9.0 A
I
I
A
C
1
= 4.5A
C
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
Ω
, Gate Resistance ()
T , Junction Temperature ( C )
R
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
JunctionTemperature
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5
IRG4BC20FD
3.0
100
10
1
V
T
= 20V
R
T
= 50OΩ
G
J
GE
J
°
= 125 oC
= 150 C
V
V
= 480V
= 15V
CC
2.5
2.0
1.5
1.0
0.5
0.0
GE
SAFE OPERATING AREA
10
1
100
1000
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
100
10
T
= 150°C
J
T
= 125°C
J
T
=
25°C
J
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Volta ge D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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6
IRG4BC20FD
100
80
60
40
20
0
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14- Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20FD
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µ S
VceIcdt
t1
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t4
∫
Erec =
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20FD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µ F
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4BC20FD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-220AB
10.54 (.415)
10.29 (.405)
N O TE S :
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
1
D IM E N S IO N S & T O LE R A N C IN G
4.69 (.185)
4.20 (.165)
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H ES ).
C O N FO R M S TO JE D E C O U TLIN E
T O -220AB .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
- G A TE
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
10
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