IRG4BC20FD-S [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.66V ， @ VGE = 15V ， IC = 9.0A ）
| 型号： | IRG4BC20FD-S |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) |
| 文件： | 总10页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91783A
IRG4BC20FD-S
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
• Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak package
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
D 2 Pak
Parameter
Max.
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
I
16
IC @ TC = 100°C
9.0
ICM
64
A
ILM
64
IF @ TC = 100°C
8.0
IFM
60
± 20
VGE
V
P
D @ TC = 25°C
Maximum Power Dissipation
60
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Thermal Resistance
Parameter
Typ.
–––
Max.
2.1
Units
°C/W
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient ( PCB Mounted,steady-state)*
Weight
–––
3.5
–––
80
1.44
–––
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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1
4/24/2000
IRG4BC20FD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
—
—
—
V
—
—
—
—
3.0
—
0.72
V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
1.66 2.0
IC = 9.0A
VGE = 15V
2.06
1.76
—
—
—
V
IC = 16A
See Fig. 2, 5
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.9 5.1
—
S
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250 µA
1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.4 1.7
1.3 1.6
V
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
27
40
IC = 9.0A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
4.2 6.2
9.9 15
See Fig. 8
43
20
—
—
TJ = 25°C
ns IC = 9.0A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
240 360
150 220
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.25
0.64
—
—
mJ See Fig. 9, 10, 18
0.89 1.3
td(on)
tr
td(off)
tf
41
22
—
—
—
—
—
—
—
—
—
55
90
TJ = 150°C, See Fig. 10, 11, 18
ns IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Turn-Off Delay Time
Fall Time
320
290
1.35
7.5
540
37
Energy losses include "tail" and
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF VCC = 30V
See Fig. 7
7.0
37
ƒ = 1.0MHz
ns TJ = 25°C See Fig.
55
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
3.5 5.0
4.5 8.0
65 138
124 360
A
VR = 200V
Qrr
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
240
210
—
—
2
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IRG4BC20FD-S
3.0
2.0
1.0
0.0
For both: MountedonPCB
Duty cycle: 50%
T
T
= 125°C
J
55°C
=
sink
G ate drive as specified
Power Dissipation = 1.75
W
Squa re wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
T = 25oC
J
T = 150oC
T = 150oC
J
J
10
T = 25 oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
1
10
5
6
7
8
9
10 11 12 13
14
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4BC20FD-S
16
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 18 A
C
12
8
9.0 A
= 9
I
I
C
C
4
= 4.5 A
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20FD-S
1000
800
600
400
200
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
CC
I
C
= 400V
= 9.0A
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
4
oes
res
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
0.90
0.88
0.86
0.84
0.82
0.80
0.78
10
Ω
V
V
= 480V
R
= 50Ohm
= 15V
CC
GE
G
= 15V
V
GE
°
T
= 25
C
V
CC
= 480V
J
C
I
= 9.0A
I
=
=
A
18
C
9.0 A
I
I
A
C
1
= 4.5A
C
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
Ω
, Gate Resistance ()
T , Junction Temperature ( C )
R
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
JunctionTemperature
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5
IRG4BC20FD-S
3.0
100
10
1
V
T
= 20V
R
T
= 50OΩ
G
J
GE
J
°
= 125 oC
= 150 C
V
= 480V
= 15V
CC
2.5
2.0
1.5
1.0
0.5
0.0
V
GE
SAFE OPERATING AREA
10
1
100
1000
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
100
10
T
= 150°C
J
T
= 125°C
J
T
=
25°C
J
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Volta ge D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20FD-S
100
80
60
40
20
0
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20FD-S
Same type
device as
D.U.T.
430µF
90%
80%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
C
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t
f
t
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E )
on off
ts
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t4
∫
Erec = V
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20FD-S
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
100 0V
V *
c
0 - 480V
5 0 V
600 0 µF
10 0V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
Tape & Reel Information
D2Pak
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FE ED DIRE CTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.0 73)
1.65 (.0 65)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED D IRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MA X.
NOTE S
1. CO MFORMS TO EIA-418.
2. CO NTRO LLING DIMENSIO N: MILLIMETER.
3. DIMENS IO N MEAS UR ED
:
26.40 (1.039)
24.40 (.961)
3
4
@ HU B.
4. INCLUDE S FLANG E DISTORTIO N
@
OUTER E DGE.
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9
IRG4BC20FD-S
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
D2Pak Package Outline
10.5 4 (.4 15)
10.2 9 (.4 05)
1 0.16 (.40 0)
R E F .
- B
-
4.69 (.18 5)
4.20 (.16 5)
1.40 (.055 )
M A X.
-
A
2
-
1.32 (.0 52)
1.22 (.0 48)
6.47 (.25 5)
6.18 (.24 3)
1.78 (.07 0)
1.27 (.05 0)
1 5.49 (.61 0)
1 4.73 (.58 0)
2.79 (.1 10)
2.29 (.0 90)
1
3
2.61 (.10 3)
2.32 (.09 1)
5 .28 (.2 08 )
4 .78 (.1 88 )
8.8 9 (.35 0)
R E F.
1.40 (.0 55)
1.14 (.0 45)
1 .39 (.055 )
1 .14 (.045 )
3 X
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37)
0.6 9 (.0 27)
3 X
5.08 (.20 0)
0.25 (.0 10)
M
B A M
M IN IM U M R E C O M M E N D E D F O O T P R IN T
11 .43 (.4 50 )
8.89 (.3 50 )
LE A D A S S IG N M E N T S
N O T E S :
1
2
3
- G A TE
1
2
3
4
D IM E N S IO N S A F T E R S O L D E R D IP .
D IM E N S IO N IN G TO L E R A N C IN G P E R A N S I Y 14 .5M , 198 2.
C O N T R O L LIN G D IM E N S IO N : IN C H .
H E A T S IN K LE A D D IM E N S IO N S D O N O T IN C L U D E B U R R S .
17.7 8 (.7 00 )
- D R A IN
- S O U R C E
&
&
3 .8 1 (.150 )
2.5 4 (.1 00)
2 .08 (.082 )
2X
2X
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 4/00
10
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