IRG4BC15UD-S [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A); 超快软恢复二极管绝缘栅双极晶体管( VCES = 600V ,的VCE(on )典型值= 2.02V , @ VGE = 15V , IC = 7.8A )型号: | IRG4BC15UD-S |
厂家: | Infineon |
描述: | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) |
文件: | 总12页 (文件大小:212K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94083A
IRG4BC15UD-S
IRG4BC15UD-L
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
C
Features
VCES = 600V
• UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
• IGBT Co-packaged with ultra-soft-recovery
G
antiparallel diode
• Industry standard D2Pak & TO-262 packages
E
n-channel
Benefits
• Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
D2Pak
TO-262
IRG4BC15UD-S
IRG4BC15UD-L
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
7.8
ICM
42
A
ILM
42
IF @ TC = 100°C
4.0
IFM
16
± 20
VGE
V
W
°C
PD @ TC = 25°C
Maximum Power Dissipation
49
PD @ TC = 100°C Maximum Power Dissipation
19
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.7
Units
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case - Diode
–––
7.0
°C/W
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount ꢀ
Junction-to-Ambient (PCB Mount, steady state)
Weight
0.50
–––
–––
80
–––
40
2 (0.07)
–––
g (oz)
www.irf.com
1
06/12/01
IRG4BC15UD-S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 2.02 2.4
––– 2.56 –––
IC = 7.8A
VGE = 15V
V
IC = 14A
––– 2.21 –––
IC = 7.8A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
4.1 6.2 –––
––– ––– 250
––– ––– 1400
––– 1.5 1.8
––– 1.4 1.7
S
VCE = 100V, IC = 7.8A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 4.0A
IC = 4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– 23
––– 4.0 6.0
––– 9.6 14
35
IC = 7.8A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
––– 17 –––
––– 20 –––
––– 160 240
––– 83 120
––– 0.24 –––
––– 0.26 –––
––– 0.50 0.63
––– 16 –––
––– 21 –––
––– 180 –––
––– 220 –––
––– 0.76 –––
––– 7.5 –––
––– 410 –––
––– 37 –––
––– 5.3 –––
TJ = 25°C
ns
IC = 7.8A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
ns
TJ = 150°C,
IC = 7.8A, VCC = 480V
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
td(off)
tf
Turn-Off Delay Time
Fall Time
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
ƒ = 1.0MHz
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
––– 28
––– 38
42
57
IF = 4.0A
Irr
Diode Peak Reverse Recovery Current ––– 2.9 5.2
––– 3.7 6.7
VR = 200V
di/dt 200A/µs
Qrr
Diode Reverse Recovery Charge
––– 40
60
nC TJ = 25°C
TJ = 125°C
––– 70 110
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
––– 280 ––– A/µs TJ = 25°C
––– 240 ––– TJ = 125°C
IRG4BC15UD-S/L
12.00
10.00
8.00
6.00
4.00
2.00
0.00
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60% of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
°
T = 150 C
J
10
°
T = 150 C
J
1
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
GE
V
= 50V
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
0.1
0.1
0.1
5.0
1
10
10.0
15.0 20.0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRG4BC15UD-S/L
14
12
10
8
4.0
3.0
2.0
1.0
V
= 15V
GE
80µs PULSE WIDTH
I
= 14A
C
I
I
= 7.8A
= 3.9A
C
6
4
C
2
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140
°
T , Case Temperature ( C)
C
T
J
, Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC15UD-S/L
800
600
400
200
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C
GE
V
I
= 400V
= 7.8A
CC
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
oes
ce
C
ies
C
C
oes
res
4
0
0
5
10
15
20
25
1
10
100
Q , Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.48
0.46
0.44
0.42
10
V
V
= 480V
= 15V
CC
GE
R
= 75Ω
G
V
V
= 15V
GE
T = 25°C
J
= 480V
CC
I
= 7.8A
C
I
= 14A
C
1
I
= 7.8A
= 3.9A
C
I
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
R
, Gate Resistance (
)
Ω
T , Junction Temperature (°C)
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
IRG4BC15UD-S/L
2.0
100
10
1
V
T
= 20V
R
= 75Ω
GE
= 125°
G
TJ = 150°C
J
V
= 15V
GE
CC
1.6
1.2
0.8
0.4
0.0
V
= 480V
SAFE OPERATING AREA
2
4
6
8
10
12
14
16
1
10
100
1000
I
, Collector Current (A)
V
, Drain-to-Source Voltage (V)
C
DS
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
T
= 150°C
= 125°C
10
J
T
J
T
=
25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage D rop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRG4BC15UD-S/L
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
F
I
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
IRG4BC15UD-S/L
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
VceIcdt
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t4
∫
Erec = V
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
IRG4BC15UD-S/L
Vg
GATE SIG NAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
600 0µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
IRG4BC15UD-S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
IRG4BC15UD-S/L
TO-262 Package Outline
TO-262 Part Marking Information
IRG4BC15UD-S/L
D2Pak Tape & Reel Information
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
F E ED D IR E C TIO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
F E E D D IR E C TIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
MIN.
30.40 (1.197)
M AX.
NOTES
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
OUTER EDGE.
Notes:
This applies to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Repetitive rating: VGE=20V; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ꢀThis only applies to TO-262 package.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
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