IRFH7934PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFH7934PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -97151
IRFH7934PbF
HEXFET® Power MOSFET
Applications
l
Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
Control MOSFET for Isolated DC-DC
VDSS
30V
RDS(on) max
Qg
l
3.5m @VGS = 10V
20nC
Converters in Networking Systems
Benefits
S
S
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN 5X6
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
± 20
24
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
19
A
76
190
3.1
2.0
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
D
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.025
-55 to + 150
T
Operating Junction and
Storage Temperature Range
J
T
STG
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
2.9
Units
RθJC
RθJA
°C/W
–––
40
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through ꢀ are on page 10
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1
2/11/09
IRFH7934PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
ΔΒ
V
Δ
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.9
4.2
1.8
-6.5
–––
–––
–––
–––
–––
20
3.5
5.1
VGS = 10V, ID = 24A
Ω
m
VGS = 4.5V, ID = 19A
VGS(th)
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 50μA
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
1.0
VDS = 24V, VGS = 0V
μA
150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
VGS = -20V
-100
gfs
Qg
–––
30
S
VDS = 15V, ID = 19A
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
4.8
2.5
6.3
6.4
8.8
15
–––
–––
–––
–––
–––
–––
3.1
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 19A
nC
Qgodr
See Fig.17 & 18
Qsw
Qoss
RG
nC
VDS = 16V, VGS = 0V
Gate Resistance
1.7
12
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
Rise Time
16
ID = 19A
ns
Ω
Turn-Off Delay Time
14
RG=1.8
Fall Time
7.5
See Fig.15
Ciss
Coss
Crss
Input Capacitance
––– 3100 –––
V
GS = 0V
pF
Output Capacitance
–––
–––
623
241
–––
–––
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
97
19
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
–––
–––
3.9
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
190
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
20
1.0
30
42
V
T = 25°C, I = 19A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 19A, VDD = 15V
J F
Qrr
ton
2
28
nC di/dt = 325A/μs
See Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFH7934PbF
1000
100
10
1000
100
10
VGS
10V
VGS
TOP
TOP
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
≤ 60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
≤
2.7V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 24A
D
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
= 15V
J
1
0.1
0.01
V
DS
≤ 60μs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs. Temperature
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3
IRFH7934PbF
100000
14
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I = 19A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
= 24V
= 15V
DS
DS
C
C
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
Ciss
6
Coss
Crss
4
2
0
0
10
20
30
40
50
60
70
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
100μsec
T
= 150°C
J
1msec
DC
T
= 25°C
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFH7934PbF
25
20
15
10
5
2.0
1.6
1.2
0.8
I
= 50μA
D
0
25
50
T
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T
, Temperature ( °C )
, Ambient Temperature (°C)
J
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
τι
(sec)
Ri (°C/W)
τJ
6.955975 0.065034
15.08336 5.307554
1.818966 0.00141
16.08526 0.757022
τC
τJ
τ1
τ
τ
τ
3 τ3
τ4
2 τ2
0.1
τ1
τ4
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7934PbF
14
12
10
8
400
300
200
100
0
I
= 24A
I
D
D
TOP
2.5A
3.7A
19A
BOTTOM
6
T
= 125°C
J
4
T
= 25°C
8
J
2
0
2
3
4
5
6
7
9
10
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
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IRFH7934PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2μF
.3μF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRFH7934PbF
PQFN Package Details
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH7934PbF
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFH7934PbF
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Quantity
4000
IRFH7934TRPBF
PQFN 5mm x 6mm
Qualification information†
Cons umer††
(per JEDEC JES D47F ††† guidelines )
MS L 2††††
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
†††† Higher MSL ratings may be available for the specific package types listed here.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.535mH, RG = 25Ω, IAS = 19A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/2009
10
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相关型号：
IRFH8201
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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