IRFH8201PBF_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFH8201PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFH8201PbF
HEXFET® Power MOSFET
VDSS
25
V
RDS(on) max
(@ VGS = 10V)
0.95
m
(@ VGS = 4.5V)
1.60
56
Qg (typical)
nC
A
ID
100
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
Features
Benefits
Low RDSon (<0.95m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Quantity
4000
IRFH8201PbF
PQFN 5mm x 6 mm
Tape and Reel
IRFH8201TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
Units
VGS
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
49
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
ID @ TC(Bottom) = 25°C
324
205
100
A
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
IDM
700
3.6
PD @TA = 25°C
PD @TC (Bottom) = 25°C
Power Dissipation
W
Power Dissipation
156
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.029
W/°C
TJ
-55 to + 150
°C
TSTG
Notes through are on page 9
1
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IRFH8201PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
Typ.
–––
20
0.80
1.20
1.80
-6.1
–––
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
–––
–––
–––
1.35
–––
–––
0.95
1.60
2.35
V
V
GS = 10V, ID = 50A
GS = 4.5V, ID = 50A
RDS(on)
Static Drain-to-Source On-Resistance
m
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Coefficient
––– mV/°C
VGS(th)
1.0
µA
V
V
V
V
DS = 20V, VGS = 0V
DS = 20V, VGS = 0V, TJ=125°C
GS = 20V
GS = -20V
VDS = 10V, ID = 50A
IDSS
IGSS
Drain-to-Source Leakage Current
–––
–––
–––
181
–––
–––
–––
–––
–––
111
150
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
nA
gfs
Qg
–––
–––
S
nC VGS = 10V, VDS = 13V, ID = 50A
Qg
Total Gate Charge
–––
56
84
V
V
DS = 13V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
16
7.0
18
15
25
39
1.1
27
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 50A
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
VDD = 13V, VGS = 4.5V
ns ID = 50A
tr
td(off)
tf
Ciss
Coss
Crss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
54
31
22
7330
1730
850
–––
–––
–––
–––
–––
–––
RG=4.7
VGS = 0V
pF
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
437
Units
EAS
mJ
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
(Body Diode)
–––
–––
100
A
700
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
25
57
1.0
38
86
V
TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 13V
nC
di/dt = 400A/µs
Thermal Resistance
Parameter
Typ.
0.5
Max.
0.8
21
Units
Junction-to-Case
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
–––
–––
–––
Junction-to-Ambient
Junction-to-Ambient
35
20
RJA (<10s)
2
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IRFH8201PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.75V
2.5V
7.0V
5.0V
4.5V
3.5V
3.0V
2.75V
2.5V
BOTTOM
BOTTOM
2.5V
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
100
10
I
= 50A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
f = 1 MHZ
GS
I = 50A
D
C
C
C
= C + C , C SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
V
V
= 20V
= 13V
DS
DS
C
iss
C
oss
C
rss
100
1
10
100
0
20
40
60
80
100 120 140
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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3
IRFH8201PbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1000
100
10
100µsec
1msec
T = 150°C
J
T = 25°C
J
Limited by Package
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.8
350
300
2.4
2.0
1.6
Limited by package
250
200
150
100
50
I
= 150µA
= 250µA
= 1.0mA
= 1A
D
I
D
1.2
0.8
I
D
I
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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March 11, 2015
IRFH8201PbF
2000
1600
1200
800
400
0
4.0
3.0
2.0
1.0
0.0
I
D
I
= 50A
D
TOP
15A
24A
BOTTOM 50A
T = 125°C
J
T = 25°C
J
25
50
75
100
125
150
2
4
6
8
10 12 14 16 18 20
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
5
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IRFH8201PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
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Fig 18a. Gate Charge Test Circuit
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IRFH8201PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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March 11, 2015
IRFH8201PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH8201PbF
Qualifiction Information†
Qualification Level
Industrial†
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Starting TJ = 25°C, L = 0.35mH, RG = 50, IAS = 50A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 100A by source bonding technology.
Calculated based on maximum allowable junction temperature; Pulse width 200µs, Vgs= 10V.
Revision History
Date
Comments
Added Rdson @ 4.5V-page1, 2
10/23/2013
Updated IDM from “400A” to “700A” on page1, 2.
7/30/2014
Updated Fig1, Fig2, Fig3, Fig7 & Fig8 on page 3, 4.
Updated package outline and tape and reel on pages 7 and 8.
3/11/2015
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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© 2015 International Rectifier
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March 11, 2015
相关型号：
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INFINEON
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