IRFH7936TRPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | IRFH7936TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总9页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH7936PbF
HEXFET® Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
VDSS
30V
RDS(on) max
Qg
l
4.8m @V = 10V
Ω
17nC
GS
Benefits
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN 5X6 mm
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
20
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
16
A
54
160
3.1
2.0
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
W
W/°C
°C
Power Dissipation
D
Linear Derating Factor
Operating Junction and
0.025
-55 to + 150
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
5.6
Units
RθJC
RθJA
°C/W
–––
40
Notes through ꢀ are on page 9
www.irf.com © 2013 International Rectifier
August 16, 2013
1
IRFH7936PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.1
6.0
4.8
6.8
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
mΩ
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.8
2.35
––– mV/°C
V
VDS = VGS, ID = 50µA
-6.3
–––
–––
–––
1.0
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
V
GS = -20V
gfs
Qg
–––
17
–––
26
S
VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
4.5
2.0
5.5
5.0
7.5
9.0
1.5
17
–––
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
VDS = 15V
VGS = 4.5V
ID = 16A
nC
See Fig.17 & 18
nC
V
V
DS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Ω
td(on)
tr
td(off)
tf
DD = 15V, VGS = 4.5V
Rise Time
Turn-Off Delay Time
12
19
ID = 16A
RG=1.8Ω
See Fig.15
ns
Fall Time
7.0
Ciss
Coss
Crss
Input Capacitance
––– 2360 –––
VGS = 0V
pF
Output Capacitance
Reverse Transfer Capacitance
–––
–––
450
210
–––
–––
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
28
16
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
3.9
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
–––
–––
160
S
p-n junction diode.
T = 25°C, I = 16A, V
= 0V
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
14
1.0
21
23
V
ns
J
S
GS
T = 25°C, I = 16A, VDD = 15V
J
F
Qrr
ton
15
nC di/dt = 300A/µs
See Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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August 16, 2013
2
IRFH7936PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
1
2.7V
2.7V
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 20A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
≤
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs.Temperature
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August 16, 2013
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IRFH7936PbF
10000
1000
100
14.0
12.0
10.0
8.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 16A
D
= C + C , C SHORTED
iss
gs gd ds
C
= C
V
V
= 24V
= 15V
rss
gd
DS
DS
C
= C + C
ds gd
oss
C
iss
C
oss
6.0
4.0
C
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45
, Total Gate Charge (nC)
V
Q
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
J
T
= 25°C
J
10msec
DC
1
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
0.1
1
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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August 16, 2013
4
IRFH7936PbF
2.5
2.0
1.5
1.0
20
15
10
5
I
= 50µA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
AmbientTemperature
100
D = 0.50
10
1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.05
Ri (°C/W) τi (sec)
τ
τ
J τJ
τ
1.6431
4.6179
16.903
16.855
0.000308
0.017766
0.9436
0.02
0.01
AτA
τ
1 τ1
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
40.8
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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August 16, 2013
5
IRFH7936PbF
14
12
10
8
220
200
180
160
140
120
100
80
I
= 20A
I
D
D
TOP
3.0A
5.1A
BOTTOM 16A
T
= 125°C
J
6
60
40
4
T
= 25°C
6
J
20
2
0
0
2
4
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
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August 16, 2013
6
IRFH7936PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
August 16, 2013
Fig 17. Gate Charge Test Circuit
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7
IRFH7936PbF
PQFN 5x6 Option "E" Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
(Per Marking Spec.)
XXXXX
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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August 16, 2013
8
IRFH7936PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.22mH, RG = 25Ω, IAS = 16A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Re vision History
Date
Comments
08/08/2013
Updated the package drawing, on page 1.
Updated the package outline drawing, on page 8.
This drawing change is related to PCN "Hana-GTBF-GEM 5x6 PQFN
•
•
•
Public."
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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August 16, 2013
9
相关型号：
IRFH8201
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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