IRFH7110TR2PBF [INFINEON]
Secondary Side Synchronous Rectification;
| 型号： | IRFH7110TR2PBF |
| 厂家： | 
Infineon |
| 描述： | Secondary Side Synchronous Rectification |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97789
IRFH7110PbF
HEXFET® Power MOSFET
VDS
Vgs max
100
V
V
± 20
RDS(on) max
(@VGS = 10V)
13.5
m
58
nC
QG (typical)
RG (typical)
0.6
PQFN 5X6 mm
ID
50
A
(@Tc(Bottom) = 25°C)
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
FeaturesandBenefits
Features
Benefits
Low RDSon (< 13.5mW)
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRFH7110TRPBF
IRFH7110TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
100
± 20
11
V
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
8.6
58
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
37
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
50
240
3.6
104
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.029
-55 to + 150
W/°C
°C
T
T
J
STG
Notes through are on page 9
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1
5/15/12
IRFH7110PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
2.0
–––
0.09
10.6
3.0
-9.0
–––
–––
–––
–––
–––
58
–––
–––
13.5
4.0
V
V/°C
m
V
Reference to 25°C, ID = 1.0mA
VDSS/TJ
RDS(on)
VGS(th)
V
GS = 10V, ID = 35A
V
DS = VGS, ID = 100μA
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
74
––– mV/°C
VDS = 100V, VGS = 0V
20
μA
V
V
DS = 100V, VGS = 0V, TJ = 125°C
GS = 20V
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = -20V
-100
V
DS = 25V, ID = 35A
gfs
–––
87
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 50V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
11
–––
–––
–––
–––
–––
–––
VGS = 10V
ID = 35A
3.6
16
nC
27.4
19.6
17
V
V
DS = 16V, VGS = 0V
DD = 50V, VGS = 10V
nC
Gate Resistance
0.6
11
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
ID = 35A
Rise Time
23
ns
pF
RG=1.8
Turn-Off Delay Time
22
Fall Time
18
3240
300
140
V
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
DS = 25V
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
110
35
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
50
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
240
(Body Diode)
p-n junction diode.
VSD
trr
T = 25°C, I = 35A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
27
1.3
41
V
T = 25°C, I = 35A, VDD = 50V
ns
J
F
Qrr
ton
Reverse Recovery Charge
Forward Turn-On Time
140
210
nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.2
32
Units
Junction-to-Case
RJC (Bottom)
RJC (Top)
RJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RJA (<10s)
22
2
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IRFH7110PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
6.0V
5.5V
5.0V
4.8V
4.5V
4.3V
4.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.3V
4.0V
BOTTOM
BOTTOM
4.0V
1
4.0V
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
I
= 35A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
V
= 25°C
= 50V
J
DS
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
16
V
C
= 0V,
f = 1 MHZ
GS
I
= 35A
D
= C + C , C SHORTED
iss
gs
gd ds
C
= C
V
V
V
= 80V
= 50V
= 20V
rss
gd
DS
DS
DS
C
= C + C
ds
12
8
10000
1000
100
oss
gd
Ciss
Coss
Crss
4
0
10
0
20
40
60
80
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFH7110PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
100μsec
T
= 150°C
J
10
1
1msec
imited by Package
L
DC
10
T
= 25°C
V
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4.5
60
LIMITED BY PACKAGE
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
I
I
I
I
= 100μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
, Case Temperature (°C)
C
T
, Temperature ( °C )
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH7110PbF
40
30
20
10
0
500
400
300
200
100
0
I
= 35A
I
D
D
TOP
4.7A
9.6A
BOTTOM 35A
T
T
= 125°C
J
= 25°C
16
J
4
8
12
20
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width µs
Duty Factor
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH7110PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH7110PbF
PQFN 5x6 Outline "E" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH7110PbF
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
TR1 OPTION (QTY 400)
METRIC
MAX
IMPERIAL
METRIC
MAX
178.5
21.5
13.8
2.3
IMPERIAL
MIN
MIN
MAX
7.028
0.846
0.543
0.091
2.598
CODE
MIN
MAX
MIN
A
B
C
D
E
F
12.972
0.823
0.504
0.067
3.819
6.988
0.823
0.520
0.075
2.350
329.5 330.5
13.011 177.5
20.9
12.8
1.7
0.846
0.532
0.091
3.898
20.9
13.2
1.9
21.5
13.5
2.3
97
99
65
66
Ref
13
17.4
14.5
Ref
13
12
G
0.512
0.512
0.571
0.571
14.5
8
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IRFH7110PbF
Qualification information†
Industrial††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.174mH, RG = 50, IAS = 35A.
Pulse width 400μs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Package is limited to 50A by die-source to lead-frame bonding technology
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 5/2012
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9
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