IRFH7190PBF [INFINEON]
Optimized for Secondary Side Synchronous Rectification;
| 型号： | IRFH7190PBF |
| 厂家： | 
Infineon |
| 描述： | Optimized for Secondary Side Synchronous Rectification |
| 文件： | 总9页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH7190PbF
HEXFET® Power MOSFET
VDSS
100
7.5
V
RDS(on) max
(@ VGS = 10V)
m
Qg (typical)
Rg (typical)
26
nC
1.0
ID
82
A
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low RDS(ON) (< 7.5m)
Benefits
Lower Conduction Losses
Internal Snubber
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg Tested
Reduced Vds Spike, Improved EMI
Increased Power Density
Increased Reliability
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Quantity
4000
IRFH7190PbF
PQFN 5mm x 6 mm
Tape and Reel
IRFH7190TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
15
Units
VGS
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
82
A
52
245
3.6
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
Power Dissipation
104
0.03
Linear Derating Factor
W/°C
°C
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Notes through are on page 9
1
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January 13, 2015
IRFH7190PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.0
Typ.
–––
54
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
6.1
–––
-5.5
–––
–––
–––
–––
26
4.7
1.9
8.3
12
7.5
3.6
VGS = 10V, ID = 49A
m
V
VDS = VGS, ID = 100µA
–––
–––
–––
–––
112
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
1.0
100
-100
–––
39
VDS = 80V, VGS = 0V
VGS = 20V
µA
nA
S
IGSS
VGS = -20V
gfs
Qg
VDS = 25V, ID = 49A
V
V
DS = 50V
GS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
2.0
nC
ID = 49A
10
80
nC VDS = 50V, VGS = 0V
Gate Resistance
1.0
4.5
6.1
10.6
3.6
1685
836
16
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
VDD = 50V, VGS = 10V
ns ID = 49A
RG = 1.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = 50V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
–––
–––
82
A
G
ISM
–––
–––
245
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
49
69
1.3
74
104
V
TJ = 25°C, IS= 49A, VGS=0V
ns TJ = 25°C, IF = 49A, VDD = 50V
nC
di/dt = 100A/µs
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
269
48
Units
mJ
EAS
IAR
A
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.2
22
Units
Junction-to-Case
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
35
20
RJA (<10s)
2
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IRFH7190PbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE
WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.1
1.7
1.3
0.9
0.5
I
= 49A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 50V
DS
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
10000
1000
100
V
C
= 0V,
f = 1 MHZ
GS
I
= 49A
= C + C , C SHORTED
D
V
V
= 80V
= 50V
iss
gs
gd ds
DS
DS
12
10
8
C
= C
rss
gd
C
= C + C
oss
ds
gd
VDS= 20V
C
C
iss
oss
6
C
rss
4
2
0
10
0
5
10 15 20 25 30 35 40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFH7190PbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
100µsec
1msec
T
= 150°C
J
10msec
DC
1
T
= 25°C
J
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
90
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
25
50
75
100
125
150
-75 -50 -25
T
0
25 50 75 100 125 150
T
, Case Temperature (°C)
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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January 13, 2015
IRFH7190PbF
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12. Typical Avalanche Current vs. Pulse Width
1200
1100
23
20
17
14
11
8
I
D
I
= 49A
D
TOP
3A
5A
1000
900
800
700
600
500
400
300
200
100
0
BOTTOM 48A
T
= 125°C
J
5
T
= 25°C
J
2
25
50
75
100
125
150
4
6
8
10 12 14 16 18 20
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On–Resistance vs. Gate Voltage
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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IRFH7190PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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Fig 18. Gate Charge Test Circuit
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6
IRFH7190PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRFH7190PbF
PQFN 5x6 Outline "B" Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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January 13, 2015
IRFH7190PbF
Qualifiction Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.23mH, RG = 50, IAS = 48A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Revision History
Date
Comments
1/13/2015
Updated package outline on page 7 .
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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January 13, 2015
相关型号：
IRFH7446
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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