IRFH7194PBF_15 [INFINEON]
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies;
| 型号： | IRFH7194PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies |
| 文件： | 总8页 (文件大小：762K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH7194PbF
HEXFET® Power MOSFET
VDSS
100
V
RDS(on) max
(@ VGS = 10V)
16.4
m
Qg (typical)
Rg (typical)
13
nC
2.1
ID
35
A
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
Features
Benefits
Low RDS(ON) (< 16.4m)
Low Thermal Resistance to PCB (<3.2°C/W)
100% Rg Tested
Lower Conduction Losses
Increased Power Density
Increased Reliability
Low Profile (<1.05 mm)
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFH7194PbF
PQFN 5mm x 6 mm
Tape and Reel
4000
IRFH7194TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
11
Units
VGS
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
35
A
22
140
3.6
39
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
Power Dissipation
Linear Derating Factor
0.03
W/°C
°C
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Notes through are on page 8
1
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
September 10, 2014
IRFH7194PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.0
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
78
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
13.7
–––
-5.2
–––
–––
–––
–––
13
1.8
0.9
4.3
6.0
5.2
40
2.1
2.7
3.3
8.0
2.5
733
374
11
16.4
3.6
VGS = 10V, ID = 21A
VDS = VGS, ID = 50µA
m
V
––– mV/°C
1.0
100
-100
–––
19
VDS = 80V, VGS = 0V
nA VGS = 20V
µA
IGSS
VGS = -20V
VDS = 25V, ID = 21A
S
gfs
Qg
VDS = 50V
nC VGS = 10V
ID = 21A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VDS = 50V, VGS = 0V
VDD = 50V, VGS = 10V
ns ID = 21A
RG = 1.0
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min.
–––
Typ.
–––
Max. Units
Conditions
MOSFET symbol
IS
Continuous Source Current
(Body Diode)
35
A
D
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
140
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
30
26
1.3
45
39
V
TJ = 25°C, IS= 21A, VGS=0V
ns TJ = 25°C, IF = 21A, VDD = 50V
nC
di/dt = 100A/µs
Avalanche Characteristics
Parameter
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
Typ.
–––
Max.
220
Units
mJ
–––
12
A
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
3.2
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
–––
–––
–––
22
35
20
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
September 10, 2014
IRFH7194PbF
1000
100
10
1000
100
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
VGS
15V
VGS
TOP
TOP
15V
1
10V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
3.8V
3.8V
7.0V
6.0V
5.0V
4.5V
4.0V
3.8V
1
3.8V
0.1
BOTTOM
BOTTOM
0.01
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 21A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
V
J
1
= 50V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
100000
14
V
C
= 0V,
= C
f = 1 MHZ
GS
I
= 21A
+ C
,
C
SHORTED
D
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
ds
DS
DS
DS
12
10
8
C
C
= C
= C
rss
oss
gd
ds
+ C
gd
10000
1000
100
C
C
oss
iss
6
C
rss
4
2
0
10
0
4
8
12
16
0.1
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
© 2014 International Rectifier Submit Datasheet Feedback
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
www.irf.com
September 10, 2014
IRFH7194PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
J
10msec
1
T
= 25°C
J
1
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
GS
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
4.0
3.5
3.0
2.5
2.0
1.5
40
30
20
10
0
I
I
I
I
= 50µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
-75
-50
-25
0
25
50
75
100
125
150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, CaseTemperature (°C)
J
C
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
, Rectangular Pulse Duration (sec)
0.01
0.1
1
t
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
© 2014 International Rectifier Submit Datasheet Feedback
4
www.irf.com
September 10, 2014
IRFH7194PbF
100
10
1
Allow ed avalanche Current vs avalanche
pulsew idth, tav, assuming
Tstart =25°C (Single Pulse)
Tj = 125°C and
Allow ed avalanche Current vs avalanche
pulsew idth, tav, assuming
Tstart = 125°C. (Single Pulse)
j = 25°C and
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 12. Typical Avalanche Current vs. Pulse Width
1000
60
50
40
30
20
10
0
I
D
2.9A
4.6A
12A
I
= 21A
TOP
D
800
600
400
200
BOTTOM
T
= 125°C
= 25°C
J
T
J
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On–Resistance vs. Gate Voltage
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
September 10, 2014
IRFH7194PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(B R )D S S
15V
t
p
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
DD
-
I
A
20V
0.01
t
p
I
A S
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
Submit Datasheet Feedback September 10, 2014
Fig 18. Gate Charge Test Circuit
www.irf.com © 2014 International Rectifier
6
IRFH7194PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
September 10, 2014
IRFH7194PbF
PQFN 5x6 Outline "B" Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualifiction Information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification Level
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.0mH, RG = 50, IAS = 12A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
September 10, 2014
相关型号：
IRFH7446
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFH7545
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
©2020 ICPDF网 联系我们和版权申明