IRFH7185PBF_15 [INFINEON]

Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies;


型号：	IRFH7185PBF_15
厂家：	Infineon
描述：	Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
文件：	总9页 (文件大小：547K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FastIRFET™

IRFH7185PbF

HEXFET^®Power MOSFET

V_DSS

100

R_DS(on)max

(@ V_GS= 10V)

5.2

m

Q_{g (typical)}

R_{g (typical)}

1.2



I_D

123

(@T_{C (Bottom)}= 25°C)

PQFN 5X6 mm

Applications

 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

 Secondary Side Synchronous Rectifier

 Hot Swap and Active O-Ring

Features

Low R_DS(ON)(< 5.2m)

Benefits

Lower Conduction Losses

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg Tested

Increased Power Density

Increased Reliability

Low Profile (<1.05 mm)

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFH7185PbF

PQFN 5mm x 6 mm

Tape and Reel

4000

IRFH7185TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

123

260

3.6

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

160

0.03

Linear Derating Factor

W/°C

°C

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Notes  through  are on page 9

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IRFH7185PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min.

100

–––

2.0

Typ.

–––

Max. Units

–––

––– mV/°C Reference to 25°C, I_D= 1mA

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

BV_DSS/T_J

R_DS(on)

V_GS(th)

V_GS(th)

I_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

4.2

5.2

3.6

V_GS= 10V, I_D= 50A 

V_DS= V_GS, I_D= 150µA

m

–––

-5.3

–––

7.3

2.7

13.7

120

1.2

6.5

9.9

3.9

2320

1070

–––

117

–––

––– mV/°C

1.0

100

-100

–––

V_DS= 80V, V_GS= 0V

V_GS= 20V

µA

I_GSS

V_GS= -20V

gfs

Q_g

V_DS= 25V, I_D= 50A

_DS= 50V

_GS= 10V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

–––

I_D= 50A

nC V_DS= 50V, V_GS= 0V



V_DD= 50V, V_GS= 10V

ns I_D= 50A

R_G= 1.0

Gate Resistance

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GS= 0V

V_DS= 50V

ƒ = 1.0MHz

Diode Characteristics

Parameter

Min.

Typ.

Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

MOSFET symbol

showing the

integral reverse

p-n junction diode.

–––

123

260

I_SM

–––

V_SD

t_rr

Q_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

0.8

110

1.3

165

T_J= 25°C, I_S= 50A, V_GS=0V 

ns T_J= 25°C, I_F= 50A, V_DD= 50V

di/dt = 100A/µs 

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy 

Avalanche Current 

Typ.

–––

Max.

360

Units

E_AS

I_AR

Thermal Resistance

Parameter

Typ.

–––

Max.

0.8

Units

Junction-to-Case 

R_JC(Bottom)

R_JC(Top)

R_JA

°C/W

Junction-to-Case 

Junction-to-Ambient 

R_JA(<10s)

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IRFH7185PbF

1000

100

1000

100

VGS

15V

10V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

60µs PULSE WIDTH

Tj = 150°C

60µs PULSE WIDTH

Tj = 25°C



0.1

100

1000

0.1

100

1000

, Drain-to-Source Voltage (V)

V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 50A

= 10V

T = 150°C

T = 25°C

= 50V

60µs PULSE WIDTH



0.1

2.5

3.5

4.5

5.5

6.5

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

10000

1000

100

14.0

= 0V,

= C

f = 1 MHZ

I = 50A

+ C , C

SHORTED

iss

12.0

= C

= 80V

= 50V

= 20V

rss

oss

= C + C

10.0

8.0

6.0

4.0

2.0

0.0

oss

iss

rss

100

10 15 20 25 30 35 40 45

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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IRFH7185PbF

1000

100

100µsec

1msec

100

imited by

Package

T = 150°C

OPERATION IN THIS

AREA

T = 25°C

LIMITED BY R (on)

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

= 0V

0.1

1.0

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

4.5

4.0

3.5

3.0

2.5

2.0

140

120

100

= 150µA

= 250µA

= 1.0mA

= 1.0A

-75 -50 -25

25 50 75 100 125 150

100

125

150

T , Temperature ( °C )

, Case Temperature (°C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10. Threshold Voltage vs. Temperature

D = 0.50

0.20

0.1

0.01

0.10

0.05

0.02

0.01

0.001

SINGLE PULSE

Notes:

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFH7185PbF

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 125°C and



Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25°C and

Tstart = 125°C.



0.1

1.0E-06

1.0E-05

1.0E-04

tav (sec)

1.0E-03

1.0E-02

Fig 12. Typical Avalanche Current vs. Pulse Width

1500

= 50A

TOP

13A

21A

BOTTOM 50A

1250

1000

750

500

250

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

Starting T , Junction Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 13. On–Resistance vs. Gate Voltage

Fig 14. Maximum Avalanche Energy vs. Drain Current

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IRFH7185PbF

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 16a. Unclamped Inductive Test Circuit

Fig 16b. Unclamped Inductive Waveforms

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 19. Gate Charge Waveform

Fig 18. Gate Charge Test Circuit

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IRFH7185PbF

PQFN 5x6 Outline "B" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note

AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

XYWWX

XXXXX

(“4 or 5 digits”)

ASSEMBLY

SITE CODE

(Per SCOP 200-002)

MARKING CODE

(Per Marking Spec)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

Note: For the most cur-

rent drawing

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IRFH7185PbF

PQFN 5x6 Tape and Reel

REEL DIMENSIONS

TAPE DIMENSIONS

CODE

DESCRIPTION

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght

Dimension design to accommodate the component thickness

Overall width of the carrier tape

Pitch between successive cavity centers

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Note: All dimension are nominal

Package

Type

Reel

Diameter

(Inch)

QTY

Reel

Width

Pin 1

(mm)

Quadrant

(mm)

5 X 6 PQFN

4000

12.4

6.300

5.300

1.20

8.00

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFH7185PbF

Qualifiction Information^†

Qualification Level

Industrial

(per JEDEC JESD47F^††guidelines)

MSL1

PQFN 5mm x 6mm

Moisture Sensitivity Level

RoHS Compliant

(per JEDEC J-STD-020D^††)

Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T_J= 25°C, L = 290µH, R_G= 50, I_AS= 50A.

 Pulse width  400µs; duty cycle  2%.

 R_is measured at T_Jof approximately 90°C.

 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:

http://www.irf.com/technical-info/appnotes/an-994.pdf

Revision History

Date

Comments

 Updated the EAS specification on pages 2 & 8.

3/13/2014

 Updated the Zth data used on figure 11, page 4.

 Updated figures 8, 11, 12, & 14 on pages 4 & 5.

 Update package limit current to 123A and Fig.8 & 9 on page 4

6/26/2014

 Corrected Min Gfs from 280S to 117S on page 2

 Updated PQFN 5 x6 Outline “B” Tape and Reel on page 8

09/25/2014

10/20/2014

3/17/2015

 Typo error—Deleted Note # 6 from page 1 and Diode Characteristic Table on page 2

 Updated package outline on pages 7.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IRFH7185PBF_15 [INFINEON]

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