IRFH7184PBF_15 [INFINEON]

Optimized for Secondary Side Synchronous Rectification;


型号：	IRFH7184PBF_15
厂家：	Infineon
描述：	Optimized for Secondary Side Synchronous Rectification
文件：	总8页 (文件大小：516K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FastIRFET™

IRFH7184PbF

HEXFET^®Power MOSFET

V_DSS

100

R_DS(on)max

(@ V_GS= 10V)

4.8

m

Q_{g (typical)}

R_{g (typical)}

1.2



I_D

128

(@T_{C (Bottom)}= 25°C)

PQFN 5X6 mm

Applications

 Optimized for Secondary Side Synchronous Rectification

 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

 Hot Swap and Active O-Ring

 BLDC Motor Drive

Features

Low R_DS(ON)(< 4.8m)

Benefits

Lower Conduction Losses

Internal Snubber

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg Tested

Reduced Vds Spike, Improved EMI

Increased Power Density

Increased Reliability

Low Profile (<1.05 mm)

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFH7184PbF

PQFN 5mm x 6 mm

IRFH7184TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

Units

V_GS

± 20

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

128

260

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

3.9

Power Dissipation

156

Linear Derating Factor

0.03

W/°C

°C

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Notes  through  are on page 8

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IRFH7184PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min.

100

–––

2.0

Typ.

–––

Max. Units

–––

––– mV/°C Reference to 25°C, I_D= 1mA

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

BV_DSS/T_J

R_DS(on)

V_GS(th)

V_GS(th)

I_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

4.0

4.8

3.6

V_GS= 10V, I_D= 50A 

V_DS= V_GS, I_D= 150µA

m

–––

-5.4

–––

7.3

2.7

13.7

120

1.2

6.5

9.9

3.9

2320

1070

–––

117

–––

––– mV/°C

1.0

100

-100

–––

V_DS= 80V, V_GS= 0V

V_GS= 20V

µA

I_GSS

_GS= -20V

_DS= 25V, I_D= 50A

gfs

Q_g

_DS= 50V

_GS= 10V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

–––

2.2

I_D= 50A

nC V_DS= 50V, V_GS= 0V



Gate Resistance

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

–––

V_DD= 50V, V_GS= 10V

ns I_D= 50A

R_G= 1.0

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GS= 0V

V_DS= 50V

ƒ = 1.0MHz

Diode Characteristics

Parameter

Min.

Typ.

Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

–––

128

MOSFET symbol

showing the

integral reverse

p-n junction diode.

I_SM

–––

260

V_SD

t_rr

Q_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

0.8

1.3

114

T_J= 25°C, I_S= 50A, V_GS=0V 

ns T_J= 25°C, I_F= 50A, V_DD= 50V

di/dt = 100A/µs 

Avalanche Characteristics

Parameter

E_{AS (Thermally limited)}Single Pulse Avalanche Energy 

I_ARAvalanche Current 

Typ.

–––

Max.

360

Units

Thermal Resistance

Parameter

Typ.

–––

Max.

0.8

Units

Junction-to-Case 

R_JC(Bottom)

R_JC(Top)

R_JA

°C/W

Junction-to-Case 

Junction-to-Ambient 

R_JA(<10s)

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IRFH7184PbF

1000

100

1000

100

VGS

15V

10V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

60µs PULSE WIDTH

Tj = 150°C

60µs PULSE WIDTH

Tj = 25°C



0.1

100

1000

0.1

100

1000

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 50A

= 10V

100

T = 150°C

T = 25°C

= 50V

60µs PULSE WIDTH



0.1

1.5

2.5

3.5

4.5

5.5

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

14.0

100000

10000

1000

100

= 0V,

= C

f = 1 MHZ

I = 50A

+ C , C

SHORTED

iss

12.0

= C

= 80V

= 50V

= 20V

rss

oss

= C + C

10.0

8.0

6.0

4.0

2.0

0.0

oss

iss

rss

100

10 15 20 25 30 35 40 45

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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IRFH7184PbF

1000

100

100µsec

1msec

100

OPERATION IN

THIS AREA

T = 150°C

LIMITED BY R (on)

T = 25°C

10msec

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

1.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

100

, Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

140

4.5

120

100

4.0

3.5

3.0

2.5

2.0

1.5

= 150µA

= 250µA

= 1.0mA

= 1.0A

100

125

150

-75 -50 -25

25 50 75 100 125 150

, Case Temperature (°C)

T , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10. Threshold Voltage vs. Temperature

D = 0.50

0.20

0.1

0.01

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFH7184PbF

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 125°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25°C and

Tstart = 125°C.

0.1

1.0E-06

1.0E-05

1.0E-04

tav (sec)

1.0E-03

1.0E-02

Fig 12. Typical Avalanche Current vs. Pulse Width

1500

= 50A

TOP

13A

21A

1250

1000

750

500

250

BOTTOM 50A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

Starting T , Junction Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 13. On–Resistance vs. Gate Voltage

Fig 14. Maximum Avalanche Energy vs. Drain Current

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IRFH7184PbF

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 16a. Unclamped Inductive Test Circuit

Fig 16b. Unclamped Inductive Waveforms

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 19. Gate Charge Waveform

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Fig 18. Gate Charge Test Circuit

IRFH7184PbF

PQFN 5x6 Outline "B" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note

AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "B" Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

(“4 or 5 digits”)

ASSEMBLY

SITE CODE

(Per SCOP 200-002)

MARKING CODE

XYWWX

XXXXX

(Per Marking Spec)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFH7184PbF

PQFN 5x6 Outline "B" Tape and Reel

REEL DIMENSIONS

TAPE DIMENSIONS

CODE

DESCRIPTION

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght

Dimension design to accommodate the component thickness

Overall width of the carrier tape

Pitch between successive cavity centers

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Note: All dimension are nominal

Package

Type

Reel

Diameter

(Inch)

QTY

Reel

Width

Pin 1

(mm)

Quadrant

(mm)

5 X 6 PQFN

4000

12.4

6.300

5.300

1.20

8.00

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Qualifiction Information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification Level

MSL1

PQFN 5mm x 6mm

Moisture Sensitivity Level

RoHS Compliant

(per JEDEC J-STD-020D^††)

Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T_J= 25°C, L = 290µH, R_G= 50, I_AS= 50A.

 Pulse width  400µs; duty cycle  2%.

 R_is measured at T_Jof approximately 90°C.

 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:

http://www.irf.com/technical-info/appnotes/an-994.pdf

Revision History

Date

Comments

01/06/2015

 FIg 8 SOA Curve is corrected — The label PW = 1msec and 10msec are switched—page 4.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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