IRFH7084PBF_15 [INFINEON]

Half-bridge and full-bridge topologies;
IRFH7084PBF_15
型号: IRFH7084PBF_15
厂家: Infineon    Infineon
描述:

Half-bridge and full-bridge topologies

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中文:  中文翻译
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StrongIRFET™  
IRFH7084PbF  
HEXFET® Power MOSFET  
Application  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
DC/DC converters  
VDSS  
40V  
RDS(on) typ.  
0.95m  
1.25m  
265A  
DC/AC Inverters  
max  
ID (Silicon Limited)  
ID (Package Limited)  
100A  
Benefits  
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dV/dt and dI/dt Capability  
Lead-Free, RoHS Compliant  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4000  
IRFH7084TRPbF  
IRFH7084PbF  
PQFN 5mm x 6mm  
6
5
4
3
2
1
300  
240  
180  
120  
60  
I
= 100A  
D
Limited by package  
T = 125°C  
J
T = 25°C  
J
0
4
0
8
12  
16  
20  
25  
50  
75  
100  
125  
150  
V
, Gate-to-Source Voltage (V)  
GS  
T
, Case Temperature (°C)  
C
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
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© 2015 International Rectifier  
Submit Datasheet Feedback  
March 19, 2015  
IRFH7084PbF  
Absolute Maximium Rating  
Symbol  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
40  
ID @ TC(Bottom) = 25°C  
265  
170  
100  
400  
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current   
Linear Derating Factor  
Max Power Dissipation  
Gate-to-Source Voltage  
A
1.25  
156  
W/°C  
PD @TC = 25°C  
VGS  
± 20  
V
TJ  
TSTG  
Operating Junction and  
Storage Temperature Range  
-55 to + 150  
°C  
Avalanche Characteristics  
EAS (Thermally limited)  
EAS (Thermally limited)  
IAR  
EAR  
185  
431  
Single Pulse Avalanche Energy   
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
mJ  
See Fig 14, 15, 23a,  
Repetitive Avalanche Energy   
Thermal Resistance  
Parameter  
Junction-to-Case   
Typ.  
0.5  
Max.  
0.8  
21  
Units  
RJC (Bottom)  
RJC (Top)  
RJA  
Junction-to-Case  
–––  
–––  
–––  
°C/W  
Junction-to-Ambient   
Junction-to-Ambient   
35  
RJA (<10s)  
20  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Min. Typ. Max. Units  
40 ––– –––  
––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA  
Conditions  
VGS = 0V, ID = 250µA  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
V
V(BR)DSS/TJ  
RDS(on)  
VGS(th)  
––– 0.95 1.25  
VGS = 10V, ID = 100A   
m  
2.2 –––  
––– –––  
––– ––– 150  
––– ––– 100  
––– ––– -100  
3.9  
1.0  
V
VDS = VGS, ID = 150µA  
V
V
V
V
DS =40 V, VGS = 0V  
DS =40V,VGS = 0V,TJ =125°C  
GS = 20V  
IDSS  
Drain-to-Source Leakage Current  
µA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Gate Resistance  
IGSS  
RG  
nA  
GS = -20V  
–––  
1.4  
–––  
  
Notes:  
Repetitive rating; pulse width limited by max. junction temperature.  
Limited by TJmax, starting TJ = 25°C, L = 0.037mH, RG = 50, IAS = 100A, VGS =10V.  
ISD 100A, di/dt 994A/µs, VDD V(BR)DSS, TJ 150°C.  
Pulse width 400µs; duty cycle 2%.  
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS  
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS  
.
Ris measured at TJ approximately 90°C.  
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V.  
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:  
http://www.irf.com/technical-info/appnotes/an-994.pdf  
2
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© 2015 International Rectifier  
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March 19, 2015  
IRFH7084PbF  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol  
gfs  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
120 ––– –––  
––– 127 190  
S
VDS = 10V, ID =100A  
Qg  
ID = 100A  
VDS = 20V  
VGS = 10V  
Qgs  
Gate-to-Source Charge  
Gate-to-Drain Charge  
Total Gate Charge Sync. (Qg– Qgd)  
Turn-On Delay Time  
–––  
–––  
35  
41  
–––  
–––  
nC  
Qgd  
Qsync  
td(on)  
tr  
––– 195 –––  
–––  
–––  
–––  
–––  
16  
31  
64  
34  
–––  
–––  
–––  
–––  
VDD = 20V  
ID = 30A  
Rise Time  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG= 2.7  
V
GS = 10V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
––– 6560 –––  
––– 940 –––  
––– 650 –––  
VGS = 0V  
VDS = 25V  
ƒ = 1.0MHz, See Fig.5  
pF  
VGS = 0V, VDS = 0V to 32V  
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1120 –––  
See Fig.11  
Coss eff.(TR) Output Capacitance (Time Related)  
––– 1300 –––  
VGS = 0V, VDS = 0V to 32V  
Diode Characteristics  
Symbol  
IS  
Parameter  
Continuous Source Current  
(Body Diode)  
Pulsed Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
MOSFET symbol  
showing the  
––– ––– 100  
A
––– ––– 400  
G
integral reverse  
p-n junction diode.  
ISM  
S
VSD  
Diode Forward Voltage  
––– –––  
1.3  
V
TJ = 25°C,IS = 100A,VGS = 0V   
dv/dt  
Peak Diode Recovery dv/dt  
–––  
–––  
–––  
–––  
–––  
–––  
4.5  
36  
37  
38  
40  
1.7  
––– V/ns TJ = 150°C,IS =100A,VDS = 40V  
–––  
–––  
–––  
–––  
–––  
TJ = 25°C  
VDD = 34V  
IF = 100A,  
trr  
Reverse Recovery Time  
ns  
TJ = 125°C  
TJ = 25°C di/dt = 100A/µs   
Qrr  
Reverse Recovery Charge  
Reverse Recovery Current  
nC  
A
TJ = 125°C  
IRRM  
TJ = 25°C  
3
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© 2015 International Rectifier  
Submit Datasheet Feedback  
March 19, 2015  
IRFH7084PbF  
10000  
1000  
100  
10  
10000  
1000  
100  
10  
VGS  
15V  
10V  
7.0V  
6.0V  
5.0V  
4.5V  
4.3V  
4.0V  
VGS  
15V  
10V  
7.0V  
6.0V  
5.0V  
4.5V  
4.3V  
4.0V  
TOP  
TOP  
BOTTOM  
BOTTOM  
4.0V  
1
60µs PULSE WIDTH  
Tj = 150°C  
4.0V  
60µs PULSE WIDTH  
Tj = 25°C  
1
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 4. Typical Output Characteristics  
Fig 3. Typical Output Characteristics  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
10000  
I
= 100A  
= 10V  
D
V
GS  
1000  
100  
T
= 150°C  
J
10  
1
T
= 25°C  
J
V
= 10V  
DS  
60µs PULSE WIDTH  
0.1  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
-60 -40 -20  
T
0
20 40 60 80 100 120 140 160  
V
, Gate-to-Source Voltage (V)  
GS  
, Junction Temperature (°C)  
J
Fig 6. Normalized On-Resistance vs. Temperature  
Fig 5. Typical Transfer Characteristics  
14  
100000  
V
= 0V,  
f = 1 MHZ  
GS  
I = 100A  
D
C
C
C
= C + C , C SHORTED  
iss  
gs gd ds  
12  
V
V
= 32V  
= 20V  
= C  
DS  
DS  
rss  
oss  
gd  
= C + C  
ds  
gd  
10  
8
10000  
1000  
100  
Ciss  
6
Coss  
Crss  
4
2
0
0
40  
80  
120  
160  
1
10  
, Drain-to-Source Voltage (V)  
100  
Q
Total Gate Charge (nC)  
G
V
DS  
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage  
Submit Datasheet Feedback March 19, 2015  
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage  
4
www.irf.com  
© 2015 International Rectifier  
IRFH7084PbF  
10000  
1000  
100  
10  
1000  
100  
10  
100µsec  
1msec  
T
= 150°C  
J
imited by  
Package  
L
T
= 25°C  
J
10msec  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
1
1
Tc = 25°C  
Tj = 150°C  
Single Pulse  
DC  
10  
V
= 0V  
GS  
1.6  
0.1  
0.1  
0.0  
0.4  
0.8  
1.2  
2.0  
0.1  
1
V
, Source-to-Drain Voltage (V)  
V
, Drain-toSource Voltage (V)  
SD  
DS  
Fig 10. Maximum Safe Operating Area  
Fig 9. Typical Source-Drain Diode Forward Voltage  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
49  
Id = 1.0mA  
48  
47  
46  
45  
44  
43  
42  
41  
40  
0
10  
20  
30  
40  
-60 -40 -20  
0
T
20 40 60 80 100 120 140 160  
, Temperature ( °C )  
V
Drain-to-Source Voltage (V)  
DS,  
J
Fig 12. Typical Coss Stored Energy  
Fig 11. Drain-to–Source Breakdown Voltage  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 6.0V  
VGS = 7.0V  
VGS = 10V  
VGS = 15V  
0
40  
80  
120  
160  
200  
I , Drain Current (A)  
D
Fig 13. Typical On-Resistance vs. Drain Current  
© 2015 International Rectifier Submit Datasheet Feedback  
5
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March 19, 2015  
IRFH7084PbF  
1
D = 0.50  
0.20  
0.10  
0.1  
0.05  
0.02  
0.01  
0.01  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
SINGLE PULSE  
( THERMAL RESPONSE )  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
1000  
100  
10  
Allowed avalanche Current vs avalanche  
pulsewidth, tav, assuming Tj = 125°C and  
Tstart =25°C (Single Pulse)  
1
Allowed avalanche Current vs avalanche  
pulsewidth, tav, assuming j = 25°C and  
Tstart = 125°C.  
0.1  
1.0E-06  
1.0E-05  
1.0E-04  
1.0E-03  
1.0E-02  
1.0E-01  
tav (sec)  
Fig 15. Typical Avalanche Current vs. Pulse width  
200  
180  
160  
140  
120  
100  
80  
TOP  
Single Pulse  
Notes on Repetitive Avalanche Curves , Figures 14, 15:  
(For further info, see AN-1005 at www.irf.com)  
1.Avalanche failures assumption:  
BOTTOM 1.0% Duty Cycle  
I
= 100A  
D
Purely a thermal phenomenon and failure occurs at a  
temperature far in excess of Tjmax. This is validated for every  
part type.  
2. Safe operation in Avalanche is allowed as long asTjmax is not  
exceeded.  
3. Equation below based on circuit and waveforms shown in Figures  
22a, 22b.  
4. PD (ave) = Average power dissipation per single avalanche pulse.  
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage  
increase during avalanche).  
60  
40  
6. Iav = Allowable avalanche current.  
7. T = Allowable rise in junction temperature, not to exceed Tjmax  
(assumed as 25°C in Figure 14, 15).  
20  
tav = Average time in avalanche.  
0
D = Duty cycle in avalanche = tav ·f  
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)  
25  
50  
75  
100  
125  
150  
Starting T , Junction Temperature (°C)  
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC  
I
av = 2T/ [1.3·BV·Zth]  
EAS (AR) = PD (ave)· av  
t
Fig 16. Maximum Avalanche Energy vs. Temperature  
6
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© 2015 International Rectifier  
Submit Datasheet Feedback  
March 19, 2015  
IRFH7084PbF  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
12  
10  
8
I
= 60A  
= 34V  
F
V
R
T = 25°C  
J
T = 125°C  
J
6
I
I
I
= 150µA  
= 1.0mA  
= 1.0A  
D
D
D
4
2
0
-75 -50 -25  
0
25  
50  
75 100 125 150  
0
200  
400  
600  
800  
1000  
T
, Temperature ( °C )  
J
di /dt (A/µs)  
F
Fig 17. Threshold Voltage vs. Temperature  
Fig 18. Typical Recovery Current vs. dif/dt  
240  
12  
I
= 60A  
= 34V  
R
I
= 100A  
= 34V  
F
F
V
200  
160  
120  
80  
V
10  
8
R
T = 25°C  
T = 25°C  
J
J
T = 125°C  
J
T = 125°C  
J
6
4
40  
2
0
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
di /dt (A/µs)  
di /dt (A/µs)  
F
F
Fig 20. Typical Stored Charge vs. dif/dt  
Fig 19. Typical Recovery Current vs. dif/dt  
240  
I
= 100A  
= 34V  
F
V
200  
160  
120  
80  
R
T = 25°C  
J
T = 125°C  
J
40  
0
0
200  
400  
600  
800  
1000  
di /dt (A/µs)  
F
Fig 21. Typical Stored Charge vs. dif/dt  
© 2015 International Rectifier Submit Datasheet Feedback  
7
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March 19, 2015  
IRFH7084PbF  
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs  
V
(BR)DSS  
t
p
15V  
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
20V  
I
0.01  
t
p
AS  
Fig 23a. Unclamped Inductive Test Circuit  
Fig 23b. Unclamped Inductive Waveforms  
Fig 24a. Switching Time Test Circuit  
Fig 24b. Switching Time Waveforms  
Id  
Vds  
Vgs  
Vgs(th)  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Fig 25b. Gate Charge Waveform  
Fig 25a. Gate Charge Test Circuit  
8
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© 2015 International Rectifier  
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March 19, 2015  
IRFH7084PbF  
PQFN 5x6 Outline "B" Package Details  
For more information on board mounting, including footprint and stencil recommendation, please refer to application note  
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf  
For more information on package inspection techniques, please refer to application note AN-1154:  
http://www.irf.com/technical-info/appnotes/an-1154.pdf  
PQFN 5x6 Part Marking  
INTERNATIONAL  
RECTIFIER LOGO  
DATE CODE  
PART NUMBER  
XXXX  
(“4 or 5 digits”)  
ASSEMBLY  
SITE CODE  
(Per SCOP 200-002)  
MARKING CODE  
XYWWX  
XXXXX  
(Per Marking Spec)  
PIN 1  
IDENTIFIER  
LOT CODE  
(Eng Mode - Min last 4 digits of EATI#)  
(Prod Mode - 4 digits of SPN code)  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
9
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© 2015 International Rectifier  
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March 19, 2015  
IRFH7084PbF  
PQFN 5x6 Tape and Reel  
REEL DIMENSIONS  
TAPE DIMENSIONS  
CODE  
Ao  
DESCRIPTION  
Dimension design to accommodate the component width  
Dimension design to accommodate the component lenght  
Dimension design to accommodate the component thickness  
Overall width of the carrier tape  
Bo  
Ko  
W
P
1
Pitch between successive cavity centers  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Note: All dimension are nominal  
Package  
Type  
Reel  
Diameter  
(Inch)  
QTY  
Reel  
Width  
W1  
Ao  
Bo  
Ko  
P1  
W
Pin 1  
(mm)  
(mm)  
(mm)  
(mm)  
(mm)  
Quadrant  
(mm)  
5 X 6 PQFN  
13  
4000  
12.4  
6.300  
5.300  
1.20  
8.00  
12  
Q1  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
10  
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© 2015 International Rectifier  
Submit Datasheet Feedback  
March 19, 2015  
IRFH7084PbF  
Qualification information†  
Industrial††  
(per JEDEC JESD47F †† guidelines )  
MSL1  
(per JEDEC J-STD-020D†† )  
Qualification level  
Moisture Sensitivity Level  
RoHS compliant  
PQFN 5mmx 6mm  
Yes  
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/  
†† Applicable version of JEDEC standard at the time of product release.  
Revision History  
Date  
Comments  
10/16/2014  
 Add Pd at tc=25C on Absolute Max Rating table on page 2  
Updated EAS (L =1mH) = 431mJ on page 2  
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V” on page 2  
03/05/2015  
3/19/2015  
 Updated package outline on page 9.  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
11  
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© 2015 International Rectifier  
Submit Datasheet Feedback  
March 19, 2015  

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