IRFH7084PBF_15 [INFINEON]
Half-bridge and full-bridge topologies;![IRFH7084PBF_15](http://pdffile.icpdf.com/pdf2/p00336/img/icpdf/IRFH7084PBF_2068331_icpdf.jpg)
型号: | IRFH7084PBF_15 |
厂家: | ![]() |
描述: | Half-bridge and full-bridge topologies |
文件: | 总11页 (文件大小:715K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
StrongIRFET™
IRFH7084PbF
HEXFET® Power MOSFET
Application
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
VDSS
40V
RDS(on) typ.
0.95m
1.25m
265A
DC/AC Inverters
max
ID (Silicon Limited)
ID (Package Limited)
100A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4000
IRFH7084TRPbF
IRFH7084PbF
PQFN 5mm x 6mm
6
5
4
3
2
1
300
240
180
120
60
I
= 100A
D
Limited by package
T = 125°C
J
T = 25°C
J
0
4
0
8
12
16
20
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
T
, Case Temperature (°C)
C
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
Absolute Maximium Rating
Symbol
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
40
ID @ TC(Bottom) = 25°C
265
170
100
400
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Linear Derating Factor
Max Power Dissipation
Gate-to-Source Voltage
A
1.25
156
W/°C
PD @TC = 25°C
VGS
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
185
431
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 14, 15, 23a,
Repetitive Avalanche Energy
Thermal Resistance
Parameter
Junction-to-Case
Typ.
0.5
Max.
0.8
21
Units
RJC (Bottom)
RJC (Top)
RJA
Junction-to-Case
–––
–––
–––
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RJA (<10s)
20
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V(BR)DSS/TJ
RDS(on)
VGS(th)
––– 0.95 1.25
VGS = 10V, ID = 100A
m
2.2 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
3.9
1.0
V
VDS = VGS, ID = 150µA
V
V
V
V
DS =40 V, VGS = 0V
DS =40V,VGS = 0V,TJ =125°C
GS = 20V
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
nA
GS = -20V
–––
1.4
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.037mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 994A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
120 ––– –––
––– 127 190
S
VDS = 10V, ID =100A
Qg
ID = 100A
VDS = 20V
VGS = 10V
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
–––
–––
35
41
–––
–––
nC
Qgd
Qsync
td(on)
tr
––– 195 –––
–––
–––
–––
–––
16
31
64
34
–––
–––
–––
–––
VDD = 20V
ID = 30A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 6560 –––
––– 940 –––
––– 650 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.5
pF
VGS = 0V, VDS = 0V to 32V
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1120 –––
See Fig.11
Coss eff.(TR) Output Capacitance (Time Related)
––– 1300 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
showing the
––– ––– 100
A
––– ––– 400
G
integral reverse
p-n junction diode.
ISM
S
VSD
Diode Forward Voltage
––– –––
1.3
V
TJ = 25°C,IS = 100A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
4.5
36
37
38
40
1.7
––– V/ns TJ = 150°C,IS =100A,VDS = 40V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 34V
IF = 100A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
TJ = 25°C
3
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
10000
1000
100
10
10000
1000
100
10
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
TOP
TOP
BOTTOM
BOTTOM
4.0V
1
60µs PULSE WIDTH
Tj = 150°C
4.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
I
= 100A
= 10V
D
V
GS
1000
100
T
= 150°C
J
10
1
T
= 25°C
J
V
= 10V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14
100000
V
= 0V,
f = 1 MHZ
GS
I = 100A
D
C
C
C
= C + C , C SHORTED
iss
gs gd ds
12
V
V
= 32V
= 20V
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
10
8
10000
1000
100
Ciss
6
Coss
Crss
4
2
0
0
40
80
120
160
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback March 19, 2015
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
www.irf.com
© 2015 International Rectifier
IRFH7084PbF
10000
1000
100
10
1000
100
10
100µsec
1msec
T
= 150°C
J
imited by
Package
L
T
= 25°C
J
10msec
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
10
V
= 0V
GS
1.6
0.1
0.1
0.0
0.4
0.8
1.2
2.0
0.1
1
V
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
0
10
20
30
40
-60 -40 -20
0
T
20 40 60 80 100 120 140 160
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
DS,
J
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to–Source Breakdown Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 6.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
0
40
80
120
160
200
I , Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
© 2015 International Rectifier Submit Datasheet Feedback
5
www.irf.com
March 19, 2015
IRFH7084PbF
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
200
180
160
140
120
100
80
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
I
= 100A
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
60
40
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
20
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
12
10
8
I
= 60A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
6
I
I
I
= 150µA
= 1.0mA
= 1.0A
D
D
D
4
2
0
-75 -50 -25
0
25
50
75 100 125 150
0
200
400
600
800
1000
T
, Temperature ( °C )
J
di /dt (A/µs)
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
240
12
I
= 60A
= 34V
R
I
= 100A
= 34V
F
F
V
200
160
120
80
V
10
8
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
40
2
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
240
I
= 100A
= 34V
F
V
200
160
120
80
R
T = 25°C
J
T = 125°C
J
40
0
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
© 2015 International Rectifier Submit Datasheet Feedback
7
www.irf.com
March 19, 2015
IRFH7084PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH7084PbF
Qualification information†
Industrial††
(per JEDEC JESD47F †† guidelines )
MSL1
(per JEDEC J-STD-020D†† )
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mmx 6mm
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
10/16/2014
Add Pd at tc=25C on Absolute Max Rating table on page 2
Updated EAS (L =1mH) = 431mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V” on page 2
03/05/2015
3/19/2015
Updated package outline on page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
相关型号:
©2020 ICPDF网 联系我们和版权申明