IRFB4212PBF [INFINEON]
DIGITAL AUDIO MOSFET; 数字音频MOSFET
| 型号： | IRFB4212PBF |
| 厂家： | 
Infineon |
| 描述： | DIGITAL AUDIO MOSFET |
| 文件： | 总7页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96918A
IRFB4212PbF
Key Parameters
DIGITAL AUDIO MOSFET
Features
• Key parameters optimized for Class-D audio
amplifier applications
VDS
100
72.5
15
V
m:
RDS(ON) typ. @ 10V
Qg typ.
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
nC
nC
Ω
Qsw typ.
8.3
RG(int) typ.
TJ max
2.2
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
175
°C
D
• Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
G
S
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
100
±20
18
Units
V
VDS
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
A
13
57
Power Dissipation f
PD @TC = 25°C
PD @TC = 100°C
60
W
Power Dissipation f
30
Linear Derating Factor
Operating Junction and
0.4
W/°C
°C
TJ
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
2.5
Units
Junction-to-Case f
RθJC
RθCS
RθJA
–––
0.50
–––
Case-to-Sink, Flat, Greased Surface
–––
62
°C/W
Junction-to-Ambient f
Notes through ꢀare on page 2
www.irf.com
1
9/16/05
IRFB4212PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
3.0
–––
0.09
58
–––
–––
72.5
5.0
V
∆ΒVDSS/∆TJ
RDS(on)
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 13A
VGS(th)
–––
-13
–––
–––
–––
–––
–––
15
V
V
DS = VGS, ID = 250µA
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
11
––– mV/°C
20
250
200
-200
–––
23
µA
nA
S
V
V
V
V
V
DS = 100V, VGS = 0V
DS = 100V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
GS = -20V
gfs
DS = 50V, ID = 13A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
3.3
1.4
6.9
3.4
8.3
2.2
7.7
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 80V
nC VGS = 10V
ID = 13A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
See Fig. 6 and 19
Ω
V
DD = 50V, VGS = 10V
Rise Time
ID = 13A
td(off)
tf
Turn-Off Delay Time
14
ns
R
G = 2.5Ω
Fall Time
3.9
550
66
Ciss
Coss
Crss
Coss
LD
Input Capacitance
V
GS = 0V
Output Capacitance
pF VDS = 50V
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
35
See Fig.5
350
4.5
VGS = 0V, VDS = 0V to 80V
Between lead,
D
S
nH 6mm (0.25in.)
G
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Avalanche Characteristics
Parameter
Typ.
Max.
Units
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
–––
25
mJ
See Fig. 14, 15, 17a, 17b
A
Repetitive Avalanche Energy
EAR
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS @ TC = 25°C
Continuous Source Current
–––
–––
18
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
57
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
41
1.3
62
V
TJ = 25°C, IS = 13A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, IF = 13A
di/dt = 100A/µs
nC
Qrr
69
100
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS = 13A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
ꢀ Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
θ
2
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IRFB4212PbF
100
10
1
100
10
1
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
9.0V
8.0V
7.0V
6.0V
9.0V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
6.0V
6.0V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
3.0
2.5
2.0
1.5
1.0
0.5
I
= 13A
D
V
= 10V
GS
10.0
1.0
T
= 175°C
J
T
= 25°C
= 50V
J
V
DS
≤ 60µs PULSE WIDTH
0.1
2
4
6
8
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
20
V
C
= 0V,
f = 1 MHZ
I
= 13A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
16
12
8
VDS= 50V
VDS= 20V
C
= C + C
ds
oss
gd
1000
100
10
Ciss
Coss
Crss
4
0
0
5
10
15
20
25
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFB4212PbF
100.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10.0
100µsec
T
= 175°C
J
1msec
1.0
0.1
T
= 25°C
10msec
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
10
0.1
1
100
1000
0.0
0.5
1.0
1.5
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
20
5.0
4.0
3.0
2.0
16
12
8
I
= 250µA
D
4
0
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
T
, Junction Temperature (°C)
T
J
J
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.0489
0.3856
1.3513
0.7140
0.00000
τ
τ
J τJ
τ
Cτ
0.02
0.01
0.000062
0.001117
0.013125
1τ1
Ci= τi/Ri
τ
τ
τ
2τ2
3τ3
4τ4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFB4212PbF
120
100
80
60
40
20
0
0.5
0.4
0.3
0.2
0.1
0.0
I
I
= 13A
D
D
TOP
3.2A
5.7A
13A
BOTTOM
T
= 125°C
J
T
= 25°C
10
J
6
8
12
14
16
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13. Maximum Avalanche Energy Vs. Drain Current
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
30
25
20
15
10
5
TOP
BOTTOM 1% Duty Cycle
= 13A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
Fig 15. Maximum Avalanche Energy Vs. Temperature
EAS (AR) = PD (ave)·tav
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5
IRFB4212PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01
Ω
t
p
I
AS
Fig 17b. Unclamped Inductive Waveforms
Fig 17a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 19a. Gate Charge Test Circuit
Fig 19b Gate Charge Waveform
6
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IRFB4212PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 0 = 2000
WE EK 19
Note: "P" in assembly lineposition
indicates "Lead - F ree"
AS S E MB L Y
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 9/05
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