IRFB4215 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFB4215 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95884
IRFB4215
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
VDSS = 60V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 9.0mΩ
G
l Fully Avalanche Rated
l Optimized for SMPS Applications
ID = 115A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast
switchingspeedandruggedizeddevicedesignthatHEXFETpower
MOSFETsarewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
115
81
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
360
PD @TC = 25°C
Power Dissipation
270
W
W/°C
V
Linear Derating Factor
1.8
VGS
IAR
Gate-to-Source Voltage
± 20
85
Avalanche Current
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
18
mJ
V/ns
4.7
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.56
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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1
7/7/04
IRFB4215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 9.0
mΩ VGS = 10V, ID = 54A
2.0
61
––– 4.0
––– –––
V
VDS = VGS, ID = 250µA
Forward Transconductance
S
VDS = 25V, ID = 54A
VDS = 60V, VGS = 0V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 170
––– ––– 39
––– ––– 59
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
IGSS
VGS = -20V
ID = 64A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13
–––
––– 160 –––
––– 77 –––
––– 110 –––
22 –––
VDD = 30V
ID = 64A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
–––
nH
G
from package
7.5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
EAS
Input Capacitance
––– 4080 –––
––– 840 –––
––– 180 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
pF
ƒ = 1.0MHz, See Fig. 5
––– 1080ꢀ220 mJ IAS = 90A, L = 54µH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– –––
115
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 360
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 78 120
––– 250 380
V
TJ = 25°C, IS = 90A, VGS = 0V
TJ = 25°C, IF = 64A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
This is tested with same test conditions as the existing data sheet
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 60µH
RG = 25Ω, IAS = 85A, VGS=10V (See Figure 12)
ISD ≤ 90A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRFB4215
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
70A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
6.0
7.0
8.0 9.0 10.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFB4215
20
16
12
8
7000
I = 64A
D
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
gs
C
SHORTED
iss
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
gd
= C + C
ds
6000
5000
4000
3000
2000
1000
0
rss
C
oss
gd
C
iss
C
4
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
°
T = 175 C
J
100µsec
°
T = 25 C
J
1
Tc = 25°C
Tj = 175°C
1msec
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFB4215
120
100
80
60
40
20
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.01
0.05
R1
R1
R2
R2
0.02
0.01
Ri (°C/W) τi (sec)
0.266 0.00036
τ
J τJ
τ
Cτ
τ
τ
1τ1
Ci= τi/Ri
2τ2
0.294 0.003748
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB4215
1000
800
600
400
200
0
15V
I
D
TOP
12A
18A
85A
DRIVER
+
L
BOTTOM
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFB4215
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFB4215
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASS EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
INTERNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S E MB LY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 7/04
8
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