IRFB4228PBF_技术文档

PD - 97227

IRFB4228PbF

PDP SWITCH

Features

Key Parameters

l

Advanced Process Technology

V_DSmin

150

180

12

170

175

V

m:

A

°C

l

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

V_{DS (Avalanche)}typ.

_DS(ON)typ. @ 10V

_RPmax @ T_C= 100°C

R

I

l

T_Jmax

l

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

D

l

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

Improved Ruggedness

l

G

S

l

Repetitive Avalanche Capability for Robustness

and Reliability

D

G

S

TO-220AB

G

D

S

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

±30

Parameter

Units

V

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

83

A

59

330

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

170

Repetitive Peak Current g

Power Dissipation

330

W

170

Power Dissipation

2.2

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbxin (1.1Nxm)

N

Thermal Resistance

Parameter

Typ.

Max.

0.45

–––

62

Units

Junction-to-Case f

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient f

°C/W

Notes through ꢀare on page 8

www.irf.com

1

06/26/06

IRFB4228PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

150

–––

3.0

–––

150

12

–––

V

Reference to 25°C, I = 1mA

∆ΒV_DSS/∆T_J

R_DS(on)

––– mV/°C

D

V_GS= 10V, I_D= 33A e

15

mΩ

V

V_DS= V_GS, I_D= 250µA

V_GS(th)

–––

-14

–––

72

5.0

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

170

–––

100

––– mV/°C

V_DS= 150V, V_GS= 0V

20

1.0

µA

mA

nA

V_DS= 150V, V_GS= 0V, T_J= 125°C

V_GS= 20V

V_GS= -20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

-100

–––

110

–––

V_DS= 25V, I_D= 50A

g_fs

Q_g

Q_gd

t_st

S

V_DD= 120V, I_D= 50A, V_GS= 10Ve

nC

Gate-to-Drain Charge

26

V_DD= 120V, V_GS= 15V, R_G= 5.1Ω

Shoot Through Blocking Time

–––

ns

µJ

L = 220nH, C= 0.3µF, V_GS= 15V

V_DS= 120V, R_G= 5.1Ω, T_J= 25°C

L = 220nH, C= 0.3µF, V_GS= 15V

V_DS= 120V, R_G= 5.1Ω, T_J= 100°C

V_GS= 0V

–––

58

–––

E_PULSE

Energy per Pulse

110

C_iss

C_oss

C_rss

Input Capacitance

––– 4530 –––

V_DS= 25V

Output Capacitance

–––

550

100

480

4.5

–––

pF

ƒ = 1.0MHz

Reverse Transfer Capacitance

Effective Output Capacitance

Internal Drain Inductance

V_GS= 0V, V_DS= 0V to 120V

C_osseff.

L_D

Between lead,

D

nH 6mm (0.25in.)

from package

G

L_S

Internal Source Inductance

–––

7.5

–––

S

and center of die contact

Avalanche Characteristics

Typ.

–––

180

–––

Max.

120

33

Parameter

Units

mJ

V

E_AS

Single Pulse Avalanche Energyd

Repetitive Avalanche Energy c

Repetitive Avalanche Voltageꢀc

Avalanche Currentꢀd

E_AR

V_{DS(Avalanche)}

I_AS

–––

50

A

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

I_S@ T_C= 25°C

I_SM

MOSFET symbol

Continuous Source Current

–––

83

showing the

(Body Diode)

A

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)ꢀc

–––

330

T_J= 25°C, I_S= 50A, V_GS= 0V e

T_J= 25°C, I_F= 50A, V_DD= 50V

di/dt = 100A/µs e

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

76

1.3

110

350

V

ns

nC

Q_rr

230

2

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IRFB4228PbF

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

TOP

BOTTOM

1

5.0V

0.1

0.01

60µs PULSE WIDTH

Tj = 25°C

≤

60µs PULSE WIDTH

Tj = 175°C

≤

1

0.1

1

10

100

1000

0.1

1

10

100

1000

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

I

= 50A

D

V

= 10V

GS

T

= 175°C

J

T

= 25°C

J

1

V

= 25V

DS

≤

60µs PULSE WIDTH

0.1

3

4

5

6

7

8

9

10 11

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

120

L = 220nH

C = Variable

L = 220nH

C = 0.3µF

100°C

110

100

90

80

70

60

50

40

30

20

100

90

80

70

60

50

40

30

20

10

100°C

25°C

85 90 95 100 105 110 115 120 125

60 65 70 75 80 85 90 95 100 105

V

Drain-to-Source Voltage (V)

I

, Peak Drain Current (A)

DS,

D

Fig 5. Typical E_PULSEvs. Drain-to-Source Voltage

Fig 6. Typical E_PULSEvs. Drain Current

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3

IRFB4228PbF

140

1000

100

10

L = 220nH

120

T

= 175°C

J

100

C = 0.3µF

80

T

= 25°C

J

60

C = 0.2µF

40

1

C = 0.1µF

20

V

= 0V

1.4

GS

0

0.1

20

40

60

80

100 120 140 160

0.2

0.4

0.6

0.8

1.0

1.2

1.6

V

, Source-to-Drain Voltage (V)

SD

Temperature (°C)

Fig 8. Typical Source-Drain Diode Forward Voltage

Fig 7. Typical E_PULSEvs.Temperature

12.0

100000

10000

1000

100

V

= 0V,

= C

f = 1 MHZ

GS

I = 50A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

V

= 120V

= 75V

= 30V

DS

= C

10.0

8.0

6.0

4.0

2.0

0.0

rss

oss

gd

= C + C

ds

gd

C

iss

C

oss

C

rss

10

0

10 20 30 40 50 60 70 80

1

10

100

1000

Q , Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

90

80

70

60

50

40

30

20

10

0

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

100µsec

10msec

1msec

Tc = 25°C

Tj = 175°C

Single Pulse

1

25

50

T

75

100

125

150

175

1

10

100

1000

, Junction Temperature (°C)

V

, Drain-to-Source Voltage (V)

J

DS

Fig 12. Maximum Safe Operating Area

Fig 11. Maximum Drain Current vs. Case Temperature

4

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IRFB4228PbF

60

50

40

30

20

10

0

500

400

300

200

100

0

I

= 50A

D

TOP

13A

20A

BOTTOM 50A

T

= 125°C

J

T

= 25°C

12

J

4

6

8

10

14

16

18

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

V

Gate -to -Source Voltage (V)

GS,

Fig 14. Maximum Avalanche Energy vs. Temperature

Fig 13. On-Resistance vs. Gate Voltage

250

5.0

4.5

4.0

3.5

ton= 1µs

Duty cycle = 0.25

Half Sine Wave

Square Pulse

200

150

I

= 250µA

D

3.0

2.5

2.0

1.5

1.0

100

50

0

25

50

75

100

125

150

175

-75 -50 -25

0

25 50 75 100 125 150 175

Case Temperature (°C)

T

, Temperature ( °C )

J

Fig 16. Typical Repetitive peak Current vs.

Fig 15. Threshold Voltage vs. Temperature

Case temperature

1

D = 0.50

0.1

0.01

0.20

0.10

0.05

R₁

R₂

R₃

Ri (°C/W) τi (sec)

0.0852 0.000052

τ

^Jτ_J

τ

^Cτ

0.02

0.01

τ

¹τ₁

τ

²τ₂

³τ₃

0.1882 0.000980

0.1769 0.008365

Ci= τi/Ri

τ /

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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5

IRFB4228PbF

Driver Gate Drive

P.W.

Period

D =

D.U.T

+

_V***

=10V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

*

V_DD

**

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

0.01Ω

t

p

I

AS

Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

Current Regulator

Same Type as D.U.T.

Id

Vds

50KΩ

.2µF

Vgs

12V

.3µF

+

V

DS

D.U.T.

-

V

GS

Vgs(th)

3mA

I

D

G

Current Sampling Resistors

Qgs1

Qgs2

Qgd

Qgodr

Fig 20a. Gate Charge Test Circuit

Fig 20b. Gate Charge Waveform

6

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IRFB4228PbF

A

PULSE A

PULSE B

RG

C

DRIVER

L

VCC

B

Ipulse

DUT

RG

t_ST

Fig 21b. t_stTest Waveforms

Fig 21a. t_stand E_PULSETest Circuit

Fig 21c. E_PULSETest Waveforms

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7

IRFB4228PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.096mH, R_G= 25Ω, I_AS= 50A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

θ

ꢁ Half sine wave with duty cycle = 0.25, ton=1µsec.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/06

8

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型号：	IRFB4228PBF
厂家：	Infineon
描述：	PDP SWITCH PDP开关晶体开关晶体管功率场效应晶体管脉冲光电二极管局域网
文件：	总8页 (文件大小：680K)
中文：	中文翻译
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IRFB4228PBF [INFINEON]

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