IRFB4310Z
更新时间:2024-09-19 05:40:29
品牌:INFINEON
描述:The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRFB4310Z 概述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRFB4310Z 数据手册
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PDF下载PD - 97115D
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
HEXFET® Power MOSFET
Applications
D
VDSS
RDS(on) typ.
max.
100V
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
4.8m
6.0m
:
:
G
ID
127A
c
(Silicon Limited)
ID
120A
S
S
(Package Limited)
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
D
Ruggedness
D
D
l Fully Characterized Capacitance and Avalanche
SOA
S
D
S
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
D
D
G
G
G
D2Pak
IRFS4310ZPbF
TO-262
IRFSL4310ZPbF
TO-220AB
IRFB4310ZPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
127c
90c
Units
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
120
560
PD @TC = 25°C
250
Maximum Power Dissipation
W
1.7
Linear Derating Factor
W/°C
V
VGS
± 20
Gate-to-Source Voltage
18
Peak Diode Recovery f
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy e
EAS (Thermally limited)
475
mJ
A
Avalanche Currentꢀc
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy g
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.6
Units
RJC
Junction-to-Case k
RCS
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
0.50
–––
–––
62
°C/W
RJA
Junction-to-Ambient (PCB Mount) , D2Pak jk
RJA
–––
40
www.irf.com
1
4/23/12
IRFB/S/SL4310ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 5mAd
Conditions
VGS = 0V, ID = 250μA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V(BR)DSS/TJ
RDS(on)
–––
2.0
4.8
6.0
4.0
20
m VGS = 10V, ID = 75A g
VDS = VGS, ID = 150μA
VGS(th)
–––
V
IDSS
Drain-to-Source Leakage Current
––– –––
μA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
––– ––– 250
––– ––– 100
––– ––– -100
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
VGS = -20V
–––
0.7
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 75A
150 ––– –––
S
Qg
––– 120 170
nC ID = 75A
VDS =50V
Qgs
Gate-to-Source Charge
–––
–––
–––
–––
–––
–––
–––
29
35
85
20
60
55
57
–––
Qgd
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
V
GS = 10V g
ID = 75A, VDS =0V, VGS = 10V
VDD = 65V
Qsync
–––
–––
–––
–––
–––
td(on)
ns
tr
Rise Time
ID = 75A
td(off)
Turn-Off Delay Time
RG = 2.7
VGS = 10V g
tf
Fall Time
Ciss
Input Capacitance
––– 6860 –––
––– 490 –––
––– 220 –––
––– 570 –––
––– 920 –––
pF VGS = 0V
VDS = 50V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)h
ƒ = 1.0MHz, See Fig. 5
Coss eff. (ER)
Coss eff. (TR)
VGS = 0V, VDS = 0V to 80V i, See Fig. 11
VGS = 0V, VDS = 0V to 80V h
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– –––
A
MOSFET symbol
127c
D
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 560
A
S
(Body Diode)ꢁd
p-n junction diode.
VSD
trr
Diode Forward Voltage
––– –––
1.3
V
TJ = 25°C, IS = 75A, VGS = 0V g
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
40
49
58
89
2.5
ns
IF = 75A
di/dt = 100A/μs g
Qrr
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
ꢀ Pulse width 400μs; duty cycle 2%.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.28mH
RG = 25, IAS = 58A, VGS =10V. Part not recommended for use
above the Eas value and test conditions.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C
ISD 75A, di/dt 600A/μs, VDD V(BR)DSS, TJ 175°C.
2
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IRFB/S/SL4310ZPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
, Drain-to-Source Voltage (V)
DS
100
V
, Drain-to-Source Voltage (V)
V
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 50V
J
1
V
DS
60μs PULSE WIDTH
0.1
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12000
10000
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
I = 75A
D
GS
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
16
12
8
VDS= 50V
VDS= 20V
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
0
0
40
80
120
160
200
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFB/S/SL4310ZPbF
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
10
1
1msec
100μsec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
0.1
0.1
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
130
120
110
100
90
140
120
100
80
I
= 5mA
LIMITED BY PACKAGE
D
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T , Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
TOP
18A
29A
58A
1600
1200
800
400
0
BOTTOM
25
50
75
100
125
150
175
0
20
40
60
80
100
Starting T , Junction Temperature (°C)
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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IRFB/S/SL4310ZPbF
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
R3
R3
R4
R4
(sec)
0.05
Ri (°C/W)
J
0.018756 0.000007
0.159425 0.000117
0.320725 0.001817
0.101282 0.011735
C
J
1
0.02
0.01
3 3
4
22
1
4
0.01
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 58A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFB/S/SL4310ZPbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
24
20
16
12
8
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250μA
ID = 150μA
I
= 30A
= 85V
F
V
R
4
T
= 125°C
= 25°C
J
T
J
0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
100 200 300 400 500 600 700 800 900 1000
T
di / dt - (A / μs)
J
f
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
600
500
400
300
200
24
20
16
12
8
I
= 30A
= 85V
I
= 45A
= 85V
F
F
V
T
V
T
R
R
100
0
4
0
= 125°C
= 25°C
= 125°C
= 25°C
J
J
T
T
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
di / dt - (A / μs)
f
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
600
500
400
300
200
100
0
I
= 45A
F
V
= 85V
R
T
= 125°C
= 25°C
J
J
T
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFB/S/SL4310ZPbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
V***
=10V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20
GS
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
10V
Pulse Width µs
Duty Factor
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
IRFB/S/SL4310ZPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 0 = 2000
WEEK 19
Note: "P" in assembly line position
indicates "L ead - F ree"
ASSEMBLY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRFB/S/SL4310ZPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
RECTIFIER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRFB/S/SL4310ZPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
LOT CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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IRFB/S/SL4310ZPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
IR WORLD HEADQUARTERS: 101N. Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/12
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11
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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IRFB4310ZTRRPBF | INFINEON | 暂无描述 | 获取价格 | |
IRFB4321 | INFINEON | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. | 获取价格 | |
IRFB4321GPBF | INFINEON | HEXFETPower MOSFET | 获取价格 | |
IRFB4321PBF | INFINEON | HEXFET Power MOSFET | 获取价格 | |
IRFB4332 | INFINEON | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. | 获取价格 | |
IRFB4332PBF | INFINEON | PDP SWITCH | 获取价格 | |
IRFB4410 | INFINEON | HEXFET Power MOSFET | 获取价格 |
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