IRFB4332 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFB4332 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDP SWITCH
IRFB4332PbF
HEXFET® Power MOSFET
Key Parameters
250
Feature
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy
Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP
Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
VDS min
V
V
VDS(Avalanche) typ.
300
R
DS(on) typ. @ 10V
29
m
TJ max
175
°C
High Repetitive Peak Current Capability for Reliable
Operation
D
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved
Ruggedness
S
D
Repetitive Avalanche Capability for Robustness and
Reliability
G
TO-220AB
IRFB4332PbF
G
D
S
Gate
Drain
Source
Standard Pack
Base part number
IRFB4332PbF
Package Type
Orderable Part Number
Form
Quantity
TO-220
Tube
50
IRFB4332PbF
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for PDP driving applications.
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VGS
Gate-to-Source Voltage
± 30
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
60
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
42
230
A
I
RP @ TC = 100°C
Repetitive Peak Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
120
PD @TC = 25°C
PD @TC = 100°C
390
W
W
200
2.6
W/°C
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
0.38
–––
62
RJC
RCS
RJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Notes through are on page 2.
1
2019-08-16
IRFB4332PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250 –––
––– 170
–––
V
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS/TJ
RDS(on)
–––
3.0
29
–––
-14
33
VGS = 10V, ID = 35A
m
V
VGS(th)
5.0
VDS = VGS, ID = 250µA
Gate Threshold Voltage Temp. Coefficient
mV/°C
VGS(th)/TJ
––– –––
––– –––
––– –––
–––
20
1.0
µA
mA
V
V
V
V
V
DS =250 V, VGS = 0V
DS = 250V,VGS = 0V,TJ =150°C
GS = 20V
GS = -20V
DS = 25V, ID = 35A
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Trans conductance
Total Gate Charge
Gate-to-Drain Charge
Shoot Through Blocking Time
100
-100
–––
150
–––
–––
IGSS
nA
S
gfs
Qg
Qgd
tst
100 –––
–––
–––
99
35
nC VDD = 125V, ID = 35A, VGS = 10V
100 –––
ns
VDD = 200V, VGS = 15V, RG= 4.7
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1, TJ = 100°C
VGS = 0V
––– 520
–––
–––
EPULSE
Energy per Pulse
µJ
––– 920
Ciss
Input Capacitance
––– 5860 –––
Coss
Output Capacitance
––– 530
––– 130
––– 360
–––
–––
–––
VDS = 25V
pF
nH
ƒ = 1.0MHz,
Crss
Reverse Transfer Capacitance
Effective Output Capacitance
Coss eff.
VGS = 0V, VDS = 0V to 200V
Between lead,
6mm (0.25in.)
from package
and center of die contact
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
Avalanche Characteristics
Parameter
Typ.
–––
300
–––
–––
Max.
230
39
–––
35
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
EAR
VDS (Avalanche)
IAS
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS @ TC = 25°C
ISM
––– –––
––– –––
60
A
230
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– –––
––– 190
1.3
290
V
TJ = 25°C,IS = 35A,VGS = 0V
ns TJ = 25°C ,IF = 35A, VDD = 50V
––– 820 1230 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 0.39mH, RG = 25, IAS = 35A.
Pulse width 300µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1µsec.
Applicable to Sustain and Energy Recovery applications.
2
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IRFB4332PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
BOTTOM
5.5V
5.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 35A
D
V
= 10V
GS
100
T
= 175°C
J
10
1
T
= 25°C
J
0.1
0.01
V
= 25V
DS
60µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
1000
1000
L = 220nH
C = Variable
L = 220nH
C = 0.3µF
100°C
25°C
800
100°C
25°C
800
600
600
400
200
0
400
200
0
100
110
120
130
140
150
160
170
150
160
170
180
190
200
I
Peak Drain Current (A)
D,
V
Drain-to -Source Voltage (V)
DS,
Fig 6. Typical EPULSE vs. Drain Current
2019-08-16
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
3
IRFB4332PbF
1000
100
10
1400
1200
1000
800
600
400
200
0
L = 220nH
C= 0.3µF
C= 0.2µF
C= 0.1µF
T
= 175°C
J
1
T
= 25°C
0.8
J
V
= 0V
GS
1.0
0.1
0.2
0.4
0.6
1.2
25
50
75
100
125
150
V
, Source-to-Drain Voltage (V)
Temperature (°C)
SD
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 7. Typical EPULSE vs. Temperature
10000
20
V
C
= 0V,
f = 1 MHZ
GS
I
= 35A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 200V
= 125V
= 50V
C
C
= C
DS
DS
DS
rss
oss
gd
8000
6000
4000
2000
0
16
12
8
= C + C
ds
gd
Ciss
Coss
Crss
4
0
1
10
100
1000
0
40
80
120
160
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
60
LIMITED BY R
(on)
DS
1µsec
50
40
30
20
10
0
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
DS
T , Junction Temperature (°C)
J
Fig 12. Maximum Safe Operating Area
2019-08-16
Fig 11. Maximum Drain Current vs. Case Temperature
4
IRFB4332PbF
0.40
0.30
0.20
0.10
0.00
1000
800
600
400
200
0
I
= 35A
I
D
D
TOP
8.3A
13A
35A
BOTTOM
T
= 125°C
= 25°C
J
T
J
5
6
7
8
9
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 14. Maximum Avalanche Energy Vs. Temperature
Fig 13. On-Resistance Vs. Gate Voltage
180
5.0
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
140
4.0
120
100
80
60
40
20
0
I
= 250µA
D
3.0
2.0
1.0
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
Case Temperature (°C)
T
J
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) (sec)
C 0.077468 0.000097
0.169886 0.001689
0.13319 0.012629
J J
1 1
2 2
33
0.01
0.02
0.01
Ci= iRi
Ci= iRi
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2019-08-16
IRFB4332PbF
60
50
40
30
20
10
0
60
50
40
30
20
10
0
I
= 35A
= 50V
I
= 24A
= 50V
F
F
V
V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Recovery Current vs. dif/dt
4000
5000
4000
3000
2000
1000
0
I
= 24A
= 50V
I
= 35A
= 50V
F
F
V
V
R
R
T = 25°C
T = 25°C
J
3000
2000
1000
0
J
T = 125°C
J
T = 125°C
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt
6
2019-08-16
IRFB4332PbF
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Gate Charge Waveform
Fig 20a. Gate Charge Test Circuit
7
2019-08-16
IRFB4332PbF
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
8
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IRFB4332PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H A S S E M B L Y L IN
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO
R E C T IF IE R
L O
N A L
O
N
W
W
1 9 , 2 0 0 0
"C "
G
O
E
E
Y E A R
E E K 1 9
L IN
0
=
2 0 0 0
N
o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
L O C O D E
W
-
T
E
C
TO-220AB packages are not recommended for Surface Mount Application.
9
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IRFB4332PbF
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) †
TO-220AB
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Changed datasheet with Infineon logo - all pages.
Corrected Absolute Maximum table-Storage Temperature range from “-40C” to “-55C” on page1.
Corrected Package Outline on page 8.
10/24/2016
Added disclaimer on last page.
01/11/2018
08/16/2019
Added typical “Irr”, “Qrr” curves (Fig 18 to Fig 21) on page 6.
Correct typo on Rdson units from “” to “m”-page2
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
WARNINGS
Due to technical requirements products may
In addition, any information given in this contain dangerous substances. For information on
document is subject to customer’s compliance the types in question please contact your nearest
with its obligations stated in this document and Infineon Technologies office.
any applicable legal requirements, norms and
standards concerning customer’s products and
Except as otherwise explicitly approved by Infineon
any use of the product of Infineon Technologies in
Technologies in a written document signed by
customer’s applications.
Document reference
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authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
10
2019-08-16
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