IRF8113PBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF8113PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总10页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF8113PbF-1
HEXFET® Power MOSFET
A
VDS
30
V
A
1
2
3
4
8
D
S
S
S
G
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
5.6
7
D
m
Ω
6
D
6.8
24
5
D
nC
A
SO-8
Top View
17.2
(@TA = 25°C)
Features
Industry-standard pinout SO-8 Package
Benefits
Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF8113PbF-1
IRF8113TRPbF-1
IRF8113PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
30
V
V
Gate-to-Source Voltage
± 20
17.2
13.8
135
2.5
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
1.6
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
JL
–––
50
JA
Notes through ꢀ are on page 10
1
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IRF8113PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
V
ΔΒVDSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
–––
–––
1.5
4.7
5.8
–––
5.6
6.8
2.2
V
V
V
GS = 10V, ID = 17.2A
GS = 4.5V, ID = 13.8A
DS = VGS, ID = 250μA
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– - 5.4 ––– mV/°C
–––
–––
–––
–––
73
–––
–––
–––
1.0
150
100
μA VDS = 24V, VGS = 0V
V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
––– -100
VGS = -20V
gfs
–––
24
–––
36
VDS = 15V, ID = 13.3A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
6.2
2.0
8.5
7.3
10.5
10
–––
–––
–––
–––
–––
–––
1.5
VDS = 15V
nC VGS = 4.5V
ID = 13.3A
See Fig. 16
nC
V
V
DS = 10V, VGS = 0V
Ω
Gate Resistance
0.8
13
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
DD = 15V, VGS = 4.5V
Rise Time
8.9
17
ID = 13.3A
Turn-Off Delay Time
ns Clamped Inductive Load
Fall Time
3.5
Ciss
Coss
Crss
Input Capacitance
––– 2910 –––
VGS = 0V
Output Capacitance
–––
–––
600
250
–––
–––
pF
V
DS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
48
13.3
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
135
integral reverse
p-n junction diode.
(Body Diode)
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
34
1.0
51
32
V
T = 25°C, I = 13.3A, V = 0V
J S GS
ns T = 25°C, I = 13.3A, VDD = 10V
J
F
Qrr
Reverse Recovery Charge
21
nC di/dt = 100A/μs
2
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IRF8113PbF-1
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20μs PULSE WIDTH
20μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
2.0
1.5
1.0
0.5
I
= 16.6A
= 10V
D
V
GS
T
= 150°C
J
T
= 25°C
J
10
V
= 15V
DS
20μs PULSE WIDTH
1
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF8113PbF-1
100000
10000
1000
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I = 13.3A
D
V
= 24V
= C + C , C SHORTED
DS
VDS= 15V
iss
gs gd ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
6
Ciss
4
Coss
Crss
2
0
100
0
10
20
30
40
50
60
1
10
100
Q
G
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 150°C
J
100μsec
1msec
1
10msec
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1.0
10.0
100.0
1000.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF8113PbF-1
18
16
14
12
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 250μA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T
, Temperature ( °C )
T
J
, Junction Temperature (°C)
J
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.924
0.000228
0.1728
1.5543
22.5
τ
τ
J τJ
Cτ
13.395
22.046
14.911
0.1
τ
1τ1
τ
τ
τ
2 τ2
3τ3
4τ4
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF8113PbF-1
200
160
120
80
15V
I
D
7.3A
8.2A
13.3A
TOP
DRIVER
+
L
BOTTOM
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
40
V
(BR)DSS
0
t
p
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
LD
VDS
I
AS
Fig 12b. Unclamped Inductive Waveforms
+
-
VDD
D.U.T
VGS
Current Regulator
Same Type as D.U.T.
Pulse Width < 1μs
Duty Factor < 0.1%
50KΩ
.2μF
12V
Fig 14a. Switching Time Test Circuit
VDS
.3μF
+
V
DS
D.U.T.
-
90%
V
GS
3mA
10%
VGS
I
I
D
G
Current Sampling Resistors
td(on)
td(off)
tr
tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRF8113PbF-1
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
7
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IRF8113PbF-1
Power MOSFET Selection for Non-Isolated DC/DC Converters
Synchronous FET
Control FET
The power loss equation for Q2 is approximated
by;
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
P = P
+ P + P*
loss
conduction
drive
output
P = Irms 2 × Rds(on)
loss ( )
Power losses in the control switch Q1 are given
by;
+ Q × V × f
(
)
g
g
⎛
⎜
Qoss
⎞
⎠
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
+
×V × f + Q × V × f
(
)
in
rr
in
⎝ 2
This can be expanded and approximated by;
*dissipated primarily in Q1.
P
= I 2 × Rds(on )
(
)
loss
rms
For the synchronous MOSFET Q2, Rds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and re-
verse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
⎛
⎛
Qgd
ig
⎞
Qgs2
ig
⎞
⎟
⎜
⎟
⎜
+ I ×
× V × f + I ×
× V × f
in
in
⎝
⎠
⎝
⎠
+ Q × V × f
(
)
g
g
⎛ Qoss
⎞
⎠
+
×V × f
in
⎝
2
This simplified loss equation includes the terms Qgs2
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 16.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached and the time the drain cur-
rent rises to Idmax at which time the drain voltage be-
gins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure A shows how Qoss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitances Cds and Cdg when multiplied by
the power supply input buss voltage.
Figure A: Qoss Characteristic
8
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IRF8113PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRF8113PbF-1
SO-8 Tape and Reel(Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.54m, RG = 25Ω, IAS = 13.3A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
ꢀ Rθ is measured at TJ approximately 90°C
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
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